JPH0582985B2 - - Google Patents

Info

Publication number
JPH0582985B2
JPH0582985B2 JP61288153A JP28815386A JPH0582985B2 JP H0582985 B2 JPH0582985 B2 JP H0582985B2 JP 61288153 A JP61288153 A JP 61288153A JP 28815386 A JP28815386 A JP 28815386A JP H0582985 B2 JPH0582985 B2 JP H0582985B2
Authority
JP
Japan
Prior art keywords
conductivity type
layer
buried layer
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61288153A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63140561A (ja
Inventor
Atsushi Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61288153A priority Critical patent/JPS63140561A/ja
Publication of JPS63140561A publication Critical patent/JPS63140561A/ja
Publication of JPH0582985B2 publication Critical patent/JPH0582985B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP61288153A 1986-12-02 1986-12-02 半導体集積回路の製造方法 Granted JPS63140561A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61288153A JPS63140561A (ja) 1986-12-02 1986-12-02 半導体集積回路の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61288153A JPS63140561A (ja) 1986-12-02 1986-12-02 半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS63140561A JPS63140561A (ja) 1988-06-13
JPH0582985B2 true JPH0582985B2 (enrdf_load_stackoverflow) 1993-11-24

Family

ID=17726489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61288153A Granted JPS63140561A (ja) 1986-12-02 1986-12-02 半導体集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS63140561A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6838504B2 (ja) * 2017-06-16 2021-03-03 富士電機株式会社 半導体装置および半導体回路装置

Also Published As

Publication number Publication date
JPS63140561A (ja) 1988-06-13

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