JPH0582730B2 - - Google Patents

Info

Publication number
JPH0582730B2
JPH0582730B2 JP59088567A JP8856784A JPH0582730B2 JP H0582730 B2 JPH0582730 B2 JP H0582730B2 JP 59088567 A JP59088567 A JP 59088567A JP 8856784 A JP8856784 A JP 8856784A JP H0582730 B2 JPH0582730 B2 JP H0582730B2
Authority
JP
Japan
Prior art keywords
shape
pixels
resist material
workpiece
alternating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59088567A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59208719A (ja
Inventor
Shii Biikuraa Chaaruzu
Emu Kyaroru Aren
Ii Gureibusu Richaado
Ee Raionzu Suchiibun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ETETSUKU SHISUTEMUZU Inc
Original Assignee
ETETSUKU SHISUTEMUZU Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ETETSUKU SHISUTEMUZU Inc filed Critical ETETSUKU SHISUTEMUZU Inc
Publication of JPS59208719A publication Critical patent/JPS59208719A/ja
Publication of JPH0582730B2 publication Critical patent/JPH0582730B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30494—Vector scan

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP59088567A 1983-05-05 1984-05-04 粒子ビ−ム装置における集積回路製造方法 Granted JPS59208719A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/491,678 US4498010A (en) 1983-05-05 1983-05-05 Virtual addressing for E-beam lithography
US491678 1983-05-05

Publications (2)

Publication Number Publication Date
JPS59208719A JPS59208719A (ja) 1984-11-27
JPH0582730B2 true JPH0582730B2 (enExample) 1993-11-22

Family

ID=23953195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59088567A Granted JPS59208719A (ja) 1983-05-05 1984-05-04 粒子ビ−ム装置における集積回路製造方法

Country Status (2)

Country Link
US (1) US4498010A (enExample)
JP (1) JPS59208719A (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4746830A (en) * 1986-03-14 1988-05-24 Holland William R Electronic surveillance and identification
US5073924A (en) * 1990-05-01 1991-12-17 Frisby Kenneth G Telephone line noise filter apparatus
US5051598A (en) * 1990-09-12 1991-09-24 International Business Machines Corporation Method for correcting proximity effects in electron beam lithography
US5103101A (en) * 1991-03-04 1992-04-07 Etec Systems, Inc. Multiphase printing for E-beam lithography
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
EP1369895B1 (en) * 1996-03-04 2012-05-09 Canon Kabushiki Kaisha Electron beam exposure apparatus and method, and device manufacturing method
US5703376A (en) * 1996-06-05 1997-12-30 Lsi Logic Corporation Multi-level resolution lithography
US6145438A (en) * 1998-03-20 2000-11-14 Berglund; C. Neil Method and apparatus for direct writing of semiconductor die using microcolumn array
US6360134B1 (en) 1998-07-20 2002-03-19 Photronics, Inc. Method for creating and improved image on a photomask by negatively and positively overscanning the boundaries of an image pattern at inside corner locations
US6645677B1 (en) * 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
US20030233630A1 (en) * 2001-12-14 2003-12-18 Torbjorn Sandstrom Methods and systems for process control of corner feature embellishment
SE0104238D0 (sv) 2001-12-14 2001-12-14 Micronic Laser Systems Ab Method and apparatus for patterning a workpiece
JP4274784B2 (ja) * 2002-05-28 2009-06-10 新光電気工業株式会社 配線形成システムおよびその方法
US20050112474A1 (en) * 2003-11-20 2005-05-26 Micronic Laser Systems Ab Method involving a mask or a reticle
JP2007522671A (ja) * 2004-02-25 2007-08-09 マイクロニック レーザー システムズ アクチボラゲット 光マスクレスリソグラフィにおいてパターンを露光し、マスクをエミュレートする方法
US20060011617A1 (en) * 2004-07-13 2006-01-19 Ricardo Covarrubias Automated laser cutting of optical lenses
KR101359562B1 (ko) * 2005-07-08 2014-02-07 넥스젠 세미 홀딩 인코포레이티드 제어 입자 빔 제조를 위한 장치 및 방법
TWI432908B (zh) * 2006-03-10 2014-04-01 Mapper Lithography Ip Bv 微影系統及投射方法
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
CN102084280B (zh) * 2008-04-24 2015-07-15 麦克罗尼克迈达塔有限责任公司 具有结构化反射镜表面的空间光调制器
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)
US8539395B2 (en) 2010-03-05 2013-09-17 Micronic Laser Systems Ab Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image
US8539392B2 (en) 2011-02-24 2013-09-17 National Taiwan University Method for compensating proximity effects of particle beam lithography processes
JP2013165121A (ja) * 2012-02-09 2013-08-22 Canon Inc 描画装置、生成方法、プログラム及び物品の製造方法
US12493005B1 (en) 2022-06-07 2025-12-09 Nexgen Semi Holding, Inc. Extended range active illumination imager

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710236A (en) * 1980-06-23 1982-01-19 Toshiba Corp Pattern drawing device
US4445039A (en) * 1981-07-06 1984-04-24 The Perkin-Elmer Corp. High throughput/high resolution particle beam system
US4463265A (en) * 1982-06-17 1984-07-31 Hewlett-Packard Company Electron beam proximity effect correction by reverse field pattern exposure

Also Published As

Publication number Publication date
US4498010A (en) 1985-02-05
JPS59208719A (ja) 1984-11-27

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