JPH0581927A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
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- JPH0581927A JPH0581927A JP3272099A JP27209991A JPH0581927A JP H0581927 A JPH0581927 A JP H0581927A JP 3272099 A JP3272099 A JP 3272099A JP 27209991 A JP27209991 A JP 27209991A JP H0581927 A JPH0581927 A JP H0581927A
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高周波用磁器コンデン
サの誘電体材料として好適なＢａＯ−ＴｉＯ2 −Ｒｅ系
（但しＲｅは希土類元素）の誘電体磁器組成物に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a BaO--TiO 2 --Re system (where Re is a rare earth element) dielectric ceramic composition suitable as a dielectric material for high frequency ceramic capacitors.
【０００２】[0002]
【従来の技術】高周波用誘電体材料としては、一般にＢ
ａＯ−ＴｉＯ2 −Ｒｅ系の誘電体磁器組成物が知られて
いる。この誘電体磁器組成物は焼結温度が１１００〜１
５００℃と高温であるため、これを誘電層の材料として
使用する磁器コンデンサの電極材料としては融点の高い
Ｐｄを主成分とするものを使用する必要がある。As a high frequency dielectric material, B is generally used.
The dielectric ceramic composition of aO-TiO 2 -Re systems are known. This dielectric ceramic composition has a sintering temperature of 1100 to 1
Since the temperature is as high as 500 ° C., it is necessary to use a material mainly composed of Pd having a high melting point as the electrode material of the ceramic capacitor using this as a material for the dielectric layer.
【０００３】[0003]
【発明が解決しようとする課題】ところで、磁器コンデ
ンサは、Ｑに関しては、その値の大きいことが望まし
い。このＱの値を大きくする方法としては、内部電極の
材料として電気抵抗の小さい金属、例えばＡｇやＣｕ等
を使用することが考えられる。By the way, it is desirable that the porcelain capacitor has a large Q value. As a method of increasing the value of Q, it is conceivable to use a metal having a low electric resistance, such as Ag or Cu, as the material of the internal electrodes.
【０００４】しかし、従来の誘電体磁器組成物は上述し
たように焼成温度が１１００〜１５００℃と高いので、
この焼成温度より融点の低いＡｇ，Ｃｕ等を内部電極の
材料として使用すると、焼成の際に内部電極が溶融して
しまい、所望の電気的特性を有する磁器コンデンサを得
ることができないという問題点があった。また、Ｐｄは
高価な材料で、しかも焼成温度が１１００〜１５００℃
と高いと、焼成のために多くのエネルギーが必要になる
ので、磁器コンデンサの製造コストが高くなるという問
題点もあった。However, since the conventional dielectric ceramic composition has a high firing temperature of 1100 to 1500 ° C. as described above,
When Ag, Cu or the like having a melting point lower than the firing temperature is used as a material for the internal electrode, the internal electrode is melted during firing, and it is not possible to obtain a porcelain capacitor having desired electrical characteristics. there were. In addition, Pd is an expensive material, and the firing temperature is 1100 to 1500 ° C.
If it is too high, a large amount of energy is required for firing, and there is also a problem that the manufacturing cost of the porcelain capacitor becomes high.
【０００５】そこで、本発明の目的は、焼成温度が低
く、Ａｇ，Ｃｕ等を内部電極の材料として使用すること
ができ、Ｑ値を大きくすることができる誘電体磁器組成
物を提供することにある。具体的には、９００℃以下の
温度の焼成で焼結させることができ、誘電率εr が６．
７〜１１．７、Ｑが１０００〜１４００、誘電率の温度
係数Ｔεが±６０ｐｐｍ／℃以下の誘電体磁器組成物を
提供することにある。Therefore, an object of the present invention is to provide a dielectric ceramic composition which has a low firing temperature, can use Ag, Cu or the like as a material for the internal electrodes, and can increase the Q value. is there. Specifically, it can be sintered by firing at a temperature of 900 ° C. or less, and has a dielectric constant ε r of 6.
An object of the present invention is to provide a dielectric ceramic composition having 7 to 11.7, Q of 1000 to 1400, and a temperature coefficient Tε of dielectric constant of ± 60 ppm / ° C or less.
【０００６】[0006]
【課題を解決するための手段】本発明に係る誘電体磁器
組成物は、一般式ｘＢａＯ−ｙＴｉＯ2 −ｚＲｅＯ3/ 2
（但し、この式において、ｘ，ｙ，ｚは、 ０．０２≦ｘ≦０．３ ０．４≦ｙ≦０．８５ ０．０５≦ｚ≦０．５ ｘ＋ｙ＋ｚ＝１ を満足する数値、ＲｅはＬａ，Ｐｒ，Ｎｄ，Ｓｍ，Ｇ
ｄ，Ｄｙ，Ｅｒ，Ｙｂから選択された１種または２種以
上の希土類元素）で表わされる主成分と、ＳｉＯ2と、
ＣａＯ，ＳｒＯ又はＢａＯから選択された１種または２
種以上の酸化物と、ＭｇＯと、Ｂ2 Ｏ3 と、Ｌｉ2 Ｏと
からなり、前記主成分が２５〜６０ｗｔ％、ＳｉＯ2 が
１０〜４０ｗｔ％、ＣａＯ，ＳｒＯ又はＢａＯから選択
された１種または２種以上の酸化物が１〜２０ｗｔ％、
ＭｇＯが１〜１５ｗｔ％、Ｂ2 Ｏ3 が３〜３０ｗｔ％、
Ｌｉ2 Ｏが０．１〜３ｗｔ％の割合で含有されている。The dielectric ceramic composition according to the present invention According to an aspect of the general formula xBaO-yTiO 2 -zReO 3/2
(However, in this equation, x, y, and z are the numerical values that satisfy 0.02 ≦ x ≦ 0.3 0.4 ≦ y ≦ 0.85 0.05 ≦ z ≦ 0.5 x + y + z = 1, Re Is La, Pr, Nd, Sm, G
a main component represented by one or more rare earth elements selected from d, Dy, Er, and Yb), SiO 2 , and
1 or 2 selected from CaO, SrO or BaO
It is composed of at least one kind of oxide, MgO, B 2 O 3 and Li 2 O, the main component is 25 to 60 wt%, SiO 2 is 10 to 40 wt%, and is selected from CaO, SrO or BaO. 1 to 20 wt% of one kind or two or more kinds of oxides,
1 to 15 wt% of MgO, 3 to 30 wt% of B 2 O 3 ,
Li 2 O is contained at a rate of 0.1 to 3 wt%.
【０００７】ここで、主成分を構成するＢａＯのモル分
率ｘを０．０２≦ｘ≦０．３の範囲としたのは、ＢａＯ
がこの範囲を外れると９００℃の温度の焼成では組成物
が焼結しなくなるからである。The BaO constituting the main component has a molar fraction x in the range of 0.02≤x≤0.3 because it is BaO.
Is out of this range, the composition will not sinter when fired at a temperature of 900 ° C.
【０００８】また、主成分を構成するＴｉＯ2 のモル分
率ｙを０．４≦ｙ≦０．８５の範囲としたのは、ＴｉＯ
2 がこの範囲を外れると誘電率の温度係数Ｔεに関して
所望の特性が得られなくなるからである。Further, the reason that the mole fraction y of TiO 2 which constitutes the main component is within the range of 0.4 ≦ y ≦ 0.85 is that TiO 2
This is because if 2 is out of this range, desired characteristics cannot be obtained with respect to the temperature coefficient Tε of the dielectric constant.
【０００９】また、主成分を構成するＲｅＯ3/2 のモル
分率ｚを０．０５≦ｚ≦０．５の範囲としたのは、Ｒｅ
Ｏ3/2 がこの範囲を外れると誘電率の温度係数Ｔεに関
して所望の特性が得られなくなるからである。The reason why the molar fraction z of ReO 3/2 which constitutes the main component is within the range of 0.05 ≦ z ≦ 0.5 is that Re
This is because if O 3/2 is out of this range, desired characteristics cannot be obtained with respect to the temperature coefficient Tε of the dielectric constant.
【００１０】また、主成分の含有率を２５〜６０ｗｔ％
としたのは、主成分の含有率が２５ｗｔ％未満になると
Ｑが１０００以下になり、主成分の含有率が６０ｗｔ％
を超えると９００℃の温度の焼成では組成物が焼結しな
くなるからである。Further, the content rate of the main component is 25 to 60% by weight.
The reason is that when the content of the main component is less than 25 wt%, Q becomes 1000 or less, and the content of the main component is 60 wt%.
If it exceeds, the composition will not sinter when fired at a temperature of 900 ° C.
【００１１】また、ＳｉＯ2 を１０〜４０ｗｔ％とした
のは、ＳｉＯ2 が１０ｗｔ％未満ではＱに関して所望の
特性が得られなくなり、ＳｉＯ2 が４０ｗｔ％を超える
と９００℃の温度の焼成では組成物が焼結しなくなるか
らである。Further, to that of SiO 2 and 10 to 40 wt% is, SiO 2 is not desired characteristics are obtained with respect to Q is less than 10 wt%, SiO 2 in composition at the firing temperature of more than the 900 ° C. to 40 wt% This is because the product will not sinter.
【００１２】また、ＣａＯ，ＳｒＯ，ＢａＯから選択さ
れた１種または２種以上の酸化物を１〜２０ｗｔ％とし
たのは、これらの酸化物が１ｗｔ％未満になると９００
℃の温度の焼成では組成物が焼結しなくなり、これらの
酸化物が２０ｗｔ％を超えるとＱに関して所望の特性が
得られなくなるからである。The amount of one or more kinds of oxides selected from CaO, SrO, and BaO is set to 1 to 20 wt% because the oxides of less than 1 wt% are 900%.
This is because the composition does not sinter when fired at a temperature of ° C, and when the oxide content of these oxides exceeds 20% by weight, desired characteristics cannot be obtained for Q.
【００１３】また、ＭｇＯを１〜１５ｗｔ％としたの
は、ＭｇＯが１ｗｔ％未満では９００℃の温度の焼成で
は組成物が焼結しなくなり、ＭｇＯが１５ｗｔ％を超え
るとＱに関して所望の特性が得られなくなるからであ
る。The content of MgO is set to 1 to 15% by weight because when MgO is less than 1% by weight, the composition does not sinter upon firing at a temperature of 900 ° C., and when MgO exceeds 15% by weight, a desired characteristic of Q is obtained. Because it will not be obtained.
【００１４】また、Ｂ2 Ｏ3 を３〜３０ｗｔ％としたの
は、Ｂ2 Ｏ3 がこの範囲を外れると９００℃の温度の焼
成では組成物が焼結しなくなるからである。[0014] Also the B 2 O 3 was set to 3 to 30 wt%, B is 2 O 3 is at a firing temperature of outside the 900 ° C. This range is because the composition is not sintered.
【００１５】また、Ｌｉ2 Ｏを０．１〜３ｗｔ％とした
のは、Ｌ2 Ｏがこの範囲を外れると９００℃の温度の焼
成では組成物が焼結しなくなるからである。Further, the Li 2 O content is set to 0.1 to 3 wt% because if L 2 O is out of this range, the composition will not sinter when fired at a temperature of 900 ° C.
【００１６】[0016]
【実施例】まず、後述する表１の試料Ｎｏ．１の場合に
ついて説明する。主成分を形成する化合物を以下に示す
重量（ｇ）ごとに各々秤量し、これらの化合物をポット
ミル中に水とともに入れ、湿式混合して原料混合物を得
た。 ＢａＣＯ3 ………５９．２ｇ ＴｉＯ2 …………５１．９ｇ Ｎｄ2 Ｏ3 …………７．７ｇ そして、この混合物を乾燥器で乾燥し、この乾燥した混
合物を粗粉砕し、これを空気中において１０００〜１２
００℃で２時間仮焼した。EXAMPLES First, sample No. 1 in Table 1 described later. The case of 1 will be described. The compounds forming the main component were weighed for each weight (g) shown below, and these compounds were put into a pot mill together with water and wet mixed to obtain a raw material mixture. BaCO 3 ............ 59.2 g TiO 2 ............ 51.9 g Nd 2 O 3 ............ 7.7 g Then, the mixture was dried in a dryer, and the dried mixture was roughly crushed, and 1000-12 in air
It was calcined at 00 ° C. for 2 hours.
【００１７】一方、副成分を形成する化合物を以下に示
す重量（ｇ）ごとに各々秤量し、これらの化合物をポッ
トミル中に水とともに入れ、湿式混合して原料混合物を
得た。 ＳｉＯ2 …………６０．０ｇ ＳｒＣＯ3 ………３０．０ｇ ＭｇＯ……………３０．０ｇ Ｂ2 Ｏ3 …………２７．０ｇ Ｌｉ2 ＣＯ3 ………３．０ｇ そして、この混合物を乾燥器で乾燥し、この乾燥した混
合物を粗粉砕し、これを空気中において７５０〜８５０
℃で２時間仮焼した。On the other hand, the compounds forming the subcomponents were weighed in the following weights (g), and these compounds were put in a pot mill together with water and wet mixed to obtain a raw material mixture. SiO 2 ………… 60.0g SrCO 3 ………… 30.0g MgO ……………… 30.0g B 2 O 3 ………… 27.0g Li 2 CO 3 …… 3.0g And this The mixture is dried in a desiccator and the dried mixture is coarsely ground, which is dried in air at 750-850.
It was calcined at ℃ for 2 hours.
【００１８】次に、仮焼した前記２種類の原料混合物
（主成分＋副成分）を重量比で１：１（５０ｗｔ％：５
０ｗｔ％）となるように秤量し、これらの原料混合物を
ポットミル中に水とともに入れ、湿式混合して混合物を
得、この混合物を乾燥器で乾燥し、その粉末を得た。Next, the calcined two kinds of raw material mixture (main component + auxiliary component) in a weight ratio of 1: 1 (50 wt%: 5).
(0 wt%), these raw material mixtures were put into a pot mill together with water and wet-mixed to obtain a mixture, and the mixture was dried with a drier to obtain a powder thereof.
【００１９】次に、この粉末にＰＶＡ系の有機バインダ
を加えて造粒し、この造粒物を型に入れ、５００ｋｇ／
ｃｍ2 の圧力で加圧成形して、直径９．８ｍｍ、厚さ
０．６ｍｍの円板状の成形物を得た。そして、この成形
物をジルコニアセッター上に載せ、空気中において９０
０℃の温度で焼成した。Next, a PVA-based organic binder was added to this powder for granulation, and the granulated product was put into a mold to obtain 500 kg /
Pressure molding was performed at a pressure of cm 2 to obtain a disk-shaped molded product having a diameter of 9.8 mm and a thickness of 0.6 mm. Then, this molded product is placed on a zirconia setter and placed in air for 90
It was calcined at a temperature of 0 ° C.
【００２０】次に、この焼成後の成形物、すなわち磁器
素体の両主面に銀ペーストを塗布し、これを８００℃の
温度で１５分間焼付けることにより磁器素体の両主面に
一対のコンデンサ電極を形成した磁器コンデンサを得
た。Next, a silver paste is applied to both main surfaces of the molded product after firing, that is, the porcelain body, and the silver paste is baked at a temperature of 800 ° C. for 15 minutes to form a pair on both main surfaces of the porcelain body. A porcelain capacitor having a capacitor electrode of No. 1 was obtained.
【００２１】次に、この磁器コンデンサについて、２０
℃における誘電率εr 、２０℃におけるＱ、誘電率の温
度係数Ｔε（ｐｐｍ／℃）を測定したところ、表１に
示す通りとなった。ここで、誘電率εr 、Ｑは周波数１
ＭＨｚ、電圧１Ｖの条件で、又、誘電率の温度係数Ｔε
は＋２０℃を基準にして、−２５℃〜＋２０℃及び＋２
０℃〜＋８５℃の温度範囲での周波数１ＭＨｚ、電圧１
Ｖの条件で測定した。Next, regarding this porcelain capacitor, 20
The permittivity ε r at ° C, the Q at 20 ° C, and the temperature coefficient Tε (ppm / ° C) of the permittivity were measured, and the results are shown in Table 1. Where the permittivity ε r , Q is frequency 1
In the condition of MHz and voltage of 1V, temperature coefficient of dielectric constant Tε
Is + 25 ° C to + 20 ° C and +2 with reference to + 20 ° C.
Frequency 1MHz, voltage 1 in the temperature range of 0 ℃ to + 85 ℃
It was measured under the condition of V.
【００２２】以上、Ｎｏ．１の試料の場合について説明
したが、試料Ｎｏ．２〜４７についても、主成分及び副
成分の割合を変えた他は、Ｎｏ．１の試料の場合と全く
同様の方法で磁器コンデンサを作成し、同一の方法で電
気的特性を測定した。結果は表１〜表１に示す通り
となった。As described above, No. The case of the sample No. 1 has been described. Regarding Nos. 2 to 47, no. A porcelain capacitor was prepared by the same method as in the case of the sample No. 1 and the electrical characteristics were measured by the same method. The results are shown in Tables 1 to 1.
【００２３】[0023]
【表１】[Table 1]
【００２４】[0024]
【表１】[Table 1]
【００２５】[0025]
【表１】[Table 1]
【００２６】表１〜表１に示す結果から明らかなよ
うに、本発明に従う試料によれば、誘電率εr が６．７
〜１１．７、Ｑが１０００〜１４００、誘電率の温度特
性Ｔεが±６０ｐｐｍ／℃以下の電気的特性を有する誘
電体磁器組成物を備えた磁器コンデンサを得ることがで
きる。また、９００℃以下の温度での焼成が可能であ
る。As is clear from the results shown in Tables 1 to 1, the samples according to the present invention have a dielectric constant ε r of 6.7.
It is possible to obtain a porcelain capacitor provided with a dielectric porcelain composition having electrical characteristics of ˜11.7, Q of 1000 to 1400, and temperature characteristic Tε of permittivity of ± 60 ppm / ° C. or less. Further, firing at a temperature of 900 ° C. or lower is possible.
【００２７】これに対し、本発明の組成範囲に属さない
試料Ｎｏ．１８〜２１、３２〜４１、４４〜４７は上記
特性の誘電体磁器組成物を得ることができない。従っ
て、これらは本発明の比較例である。On the other hand, the sample No. which does not belong to the composition range of the present invention. Nos. 18 to 21, 32 to 41, and 44 to 47 cannot obtain the dielectric ceramic composition having the above characteristics. Therefore, these are comparative examples of the present invention.
【００２８】次に、本件出願に係る誘電体磁器組成物の
主成分及び副成分の適正範囲について、表１〜表１
に示す試料Ｎｏ．１〜４７の結果を参照しながら検討す
る。Next, Tables 1 to 1 show the proper ranges of the main component and subcomponents of the dielectric ceramic composition according to the present application.
Sample No. The results of 1 to 47 will be examined.
【００２９】ＢａＯのモル分率ｘが、試料Ｎｏ．１〜１
７，２２〜３１に示すように０．０２〜０．３ｍｏｌ％
の場合には、所望の電気的特性を有する誘電体磁器組成
物を得ることができるが、ＢａＯのモル分率ｘが、試料
Ｎｏ．２０に示すように０．０１ｍｏｌ％の場合には、
９００℃の温度の焼成では焼結せず、ＢａＯのモル分率
ｘが、試料Ｎｏ．１８に示すように０．４ｍｏｌ％の場
合には、９００℃の温度の焼成では焼結しない。従っ
て、ＢａＯのモル分率ｘの適正範囲は０．０２〜０．３
ｍｏｌ％である。The mole fraction x of BaO was determined as sample No. 1-1
As shown in 7, 22-31, 0.02-0.3 mol%
In the case of No. 2, it is possible to obtain a dielectric ceramic composition having desired electrical characteristics, but the molar fraction x of BaO is set to Sample No. In the case of 0.01 mol% as shown in 20,
It did not sinter by firing at a temperature of 900 ° C., and the BaO mole fraction x was set to the value of Sample No. As shown in 18, when 0.4 mol%, sintering is not performed by firing at a temperature of 900 ° C. Therefore, the proper range of the mole fraction x of BaO is 0.02 to 0.3.
It is mol%.
【００３０】ＴｉＯ2 のモル分率ｙが、試料Ｎｏ．１〜
１７，２２〜３１に示すように０．４〜０．８５ｍｏｌ
％の場合には、所望の電気的特性を有する誘電体磁器組
成物を得ることができるが、ＴｉＯ2 のモル分率ｙが、
試料Ｎｏ．２１に示すように０．３ｍｏｌ％の場合に
は、誘電率の温度係数Ｔεに関して所望の特性が得られ
ず、ＴｉＯ2 モル分率ｙが、試料Ｎｏ．４６に示すよう
に０．８８ｍｏｌ％の場合には、誘電率の温度係数Ｔε
に関して所望の特性が得られない。従って、ＴｉＯ2 の
モル分率ｙの適正範囲は０．４〜０．８５ｍｏｌ％であ
る。The mole fraction y of TiO 2 was determined as sample No. 1 to
As shown in 17, 22 to 31, 0.4 to 0.85 mol
%, It is possible to obtain a dielectric ceramic composition having desired electrical characteristics, but the molar fraction y of TiO 2 is
Sample No. As shown in FIG. 21, in the case of 0.3 mol%, the desired characteristics cannot be obtained with respect to the temperature coefficient Tε of the dielectric constant, and the TiO 2 mole fraction y is the sample No. As shown in 46, in the case of 0.88 mol%, the temperature coefficient of the dielectric constant Tε
The desired characteristics cannot be obtained. Therefore, the appropriate range of the mole fraction y of TiO 2 is 0.4 to 0.85 mol%.
【００３１】ＲｅＯ3/2 のモル分率ｚが、試料Ｎｏ．１
〜１７，２２〜３１に示すように０．０５〜０．５ｍｏ
ｌ％の場合には、所望の電気的特性を有する誘電体磁器
組成物を得ることができるが、ＲｅＯ3/2 のモル分率ｚ
が、試料Ｎｏ．１９に示すように０．０２ｍｏｌ％の場
合には、誘電率の温度係数Ｔεに関して所望の特性が得
られず、ＲｅＯ3/2 のモル分率ｚが、試料Ｎｏ．４７に
示すように０．５５ｍｏｌ％の場合には、誘電率の温度
係数Ｔεに関して所望の特性が得られない。従って、Ｒ
ｅＯ3/2 のモル分率ｚの適正範囲は０．０５〜０．５ｍ
ｏｌ％である。The mole fraction z of ReO 3/2 was determined as sample No. 1
~ 17,22 ~ 31 As shown in 0.05-0.5mo
In the case of 1%, a dielectric ceramic composition having desired electrical characteristics can be obtained, but the molar fraction z of ReO 3/2 is z.
Of the sample No. As shown in FIG. 19, in the case of 0.02 mol%, the desired characteristics cannot be obtained with respect to the temperature coefficient Tε of the dielectric constant, and the molar fraction z of ReO 3/2 is not determined. As shown in 47, in the case of 0.55 mol%, desired characteristics cannot be obtained with respect to the temperature coefficient Tε of the dielectric constant. Therefore, R
The proper range of the mole fraction z of eO 3/2 is 0.05 to 0.5 m.
ol%.
【００３２】ＳｉＯ2 が、試料Ｎｏ．１〜１７，２２〜
３１に示すように１０〜４０ｗｔ％の場合には、所望の
電気的特性を有する誘電体磁器組成物を得ることができ
るが、ＳｉＯ2 が、試料Ｎｏ．３２に示すように５ｗｔ
％の場合には、Ｑに関して所望の特性が得られず、Ｓｉ
Ｏ2 が、試料Ｎｏ．３３に示すように４５ｗｔ％の場合
には、９００℃の温度の焼成で焼結しない。従って、Ｓ
ｉＯ2 の適正範囲は１０〜４０ｗｔ％である。SiO 2 is the sample No. 1-17, 22-
In the case of 10 to 40 wt% as shown in No. 31, a dielectric porcelain composition having desired electrical characteristics can be obtained, but SiO 2 is used as the sample No. 5 wt as shown in 32
%, The desired characteristics cannot be obtained for Q, and Si
O 2 is the sample No. As shown in 33, in the case of 45 wt%, sintering is not performed by firing at a temperature of 900 ° C. Therefore, S
The proper range of iO 2 is 10 to 40 wt%.
【００３３】ＣａＯ，ＢａＯ及び／又はＳｒＯが、試料
Ｎｏ．１〜１７，２２〜３１に示すように１〜２０ｗｔ
％の場合には、所望の電気的特性を有する誘電体磁器組
成物を得ることができるが、ＣａＯ，ＢａＯ及び／又は
ＳｒＯが、試料Ｎｏ．３４に示すように、０．５ｗｔ％
の場合には、９００℃の温度の焼成で焼結せず、Ｃａ
Ｏ，ＢａＯ及び／又はＳｒＯが、試料Ｎｏ．３５に示す
ように、２５ｗｔ％の場合にはＱに関して所望の特性が
得られない。従って、ＣａＯ，ＢａＯ及び／又はＳｒＯ
の適正範囲は１〜２０ｗｔ％である。CaO, BaO, and / or SrO are sample Nos. 1 to 17 and 22 to 31, as shown in 1 to 20 wt
%, A dielectric porcelain composition having desired electrical characteristics can be obtained, but CaO, BaO and / or SrO is used as the sample No. As shown in 34, 0.5 wt%
In the case of, Ca was not sintered by firing at a temperature of 900 ° C.
O, BaO and / or SrO are sample Nos. As shown in FIG. 35, in the case of 25 wt%, desired characteristics cannot be obtained for Q. Therefore, CaO, BaO and / or SrO
The appropriate range is 1 to 20 wt%.
【００３４】ＭｇＯが、試料Ｎｏ．１〜１７，２２〜３
１に示すように１〜１５ｗｔ％の場合には、所望の電気
的特性を有する誘電体磁器組成物を得ることができる
が、ＭｇＯが、試料Ｎｏ．３６に示すように０．１ｗｔ
％の場合には９００℃の温度の焼成で焼結せず、ＭｇＯ
が、試料Ｎｏ．３７に示すように２０ｗｔ％の場合には
Ｑに関して所望の特性が得られない。従って、ＭｇＯの
適正範囲は１〜１５ｗｔ％である。MgO is the sample No. 1-17, 22-3
In the case of 1 to 15 wt% as shown in Fig. 1, a dielectric porcelain composition having desired electrical characteristics can be obtained, but with MgO being the sample No. As shown in 36, 0.1 wt
%, MgO was not sintered by firing at a temperature of 900 ° C.
Of the sample No. As shown in 37, when 20 wt%, the desired characteristics cannot be obtained for Q. Therefore, the proper range of MgO is 1 to 15 wt%.
【００３５】Ｂ2 Ｏ3 が、試料Ｎｏ．１〜１７，２２〜
３１に示すように３〜３０ｗｔ％の場合には、所望の電
気的特性を有する誘電体磁器組成物を得ることができる
が、Ｂ2 Ｏ3 が、試料Ｎｏ．３８に示すように１ｗｔ％
の場合には９００℃で焼結せず、Ｂ2 Ｏ3 が、試料Ｎ
ｏ．３９に示すように４０ｗｔ％の場合には９００℃の
温度の焼成で焼結しない。従って、Ｂ2 Ｏ3 の適正範囲
は３〜３０ｗｔ％である。B 2 O 3 is the sample No. 1-17, 22-
In the case of 3 to 30 wt% as shown in No. 31, a dielectric porcelain composition having desired electrical characteristics can be obtained, but B 2 O 3 is used as sample No. 1 wt% as shown in 38
In the case of No. 3 , B 2 O 3 was not sintered at 900 ° C.
o. As shown in 39, in the case of 40 wt%, sintering is not performed by firing at a temperature of 900 ° C. Therefore, the proper range of B 2 O 3 is 3 to 30 wt%.
【００３６】Ｌ2 Ｏが、試料Ｎｏ．１〜１７，２２〜３
１に示すように０．１〜３ｗｔ％の場合には、所望の電
気的特性を有する誘電体磁器組成物を得ることができる
が、Ｌ2 Ｏが、試料Ｎｏ．４０に示すように０．０１ｗ
ｔ％の場合には９００℃の温度の焼成で焼結せず、Ｌｉ
2 Ｏが、試料Ｎｏ．４１に示すように５ｗｔ％の場合に
は９００℃の温度の焼成では焼結しない。従って、Ｌｉ
2 Ｏの適正範囲は０．１〜３ｗｔ％である。L 2 O is the sample No. 1-17, 22-3
In the case of 0.1 to 3 wt% as shown in FIG. 1, a dielectric ceramic composition having desired electrical characteristics can be obtained, but L 2 O is a sample No. 0.01w as shown in 40
In the case of t%, it does not sinter by firing at a temperature of 900 ° C.
2 O is the sample No. As shown in 41, in the case of 5 wt%, sintering is not performed by firing at a temperature of 900 ° C. Therefore, Li
The proper range of 2 O is 0.1 to 3 wt%.
【００３７】主成分の含有率が、試料Ｎｏ．１〜１７，
２２〜３１に示すように２５〜６０ｗｔ％の場合には、
所望の電気的特性を有する誘電体磁器組成物を得ること
ができるが、主成分の含有率が、試料Ｎｏ．４４に示す
ように１５ｗｔ％の場合にはＱに関して所望の特性が得
られず、主成分の含有率が、試料Ｎｏ．４５に示すよう
に７０ｗｔ％の場合には９００℃の温度の焼成で焼結し
ない。従って、主成分の含有率の適正範囲は２５〜６０
ｗｔ％である。The content rate of the main component is the same as the sample No. 1-17,
In the case of 25 to 60 wt% as shown in 22 to 31,
A dielectric ceramic composition having desired electrical characteristics can be obtained, but the content ratio of the main component is set to Sample No. As shown in No. 44, in the case of 15 wt%, the desired characteristics cannot be obtained with respect to Q, and the content rate of the main component is sample No. As shown in 45, in the case of 70 wt%, sintering at a temperature of 900 ° C. does not sinter. Therefore, the proper range of the content rate of the main component is 25 to 60.
wt%.
【００３８】[0038]
【発明の効果】本発明によれば、誘電体磁器組成物の焼
成温度を９００℃以下とすることができるので、電気抵
抗の小さいＡｇ，Ｃｕ等を内部電極の材料として使用す
ることができ、従ってＱの大きな磁器コンデンサを提供
することができる。また、本発明によれば、磁器コンデ
ンサの内部電極の材料としてＰｄより安価なＡｇ，Ｃｕ
等を使用することができるので、磁器コンデンサの製造
コストを低下させることができる。更に、本発明によれ
ば、誘電体磁器組成物の焼成温度を低下させることがで
きるので、磁器コンデンサの製造工程における焼成のた
めの熱エネルギーを節約することができ、従って、この
面からも製造コストを低下させることができる。According to the present invention, since the firing temperature of the dielectric ceramic composition can be set to 900 ° C. or lower, Ag, Cu or the like having a low electric resistance can be used as a material for the internal electrodes, Therefore, it is possible to provide a porcelain capacitor having a large Q. Further, according to the present invention, Ag, Cu, which is cheaper than Pd, as a material for the internal electrodes of the porcelain capacitor.
And the like can be used, the manufacturing cost of the porcelain capacitor can be reduced. Furthermore, according to the present invention, since the firing temperature of the dielectric ceramic composition can be lowered, it is possible to save the heat energy for firing in the manufacturing process of the ceramic capacitor, and therefore the manufacturing process from this aspect as well. The cost can be reduced.
【表１○１】 [Table 1 ○ 1]
【表１○２】 [Table 1 ○ 2]
【表１○３】 [Table 1 ○ 3]
───────────────────────────────────────────────────── フロントページの続き (72)発明者 水野 洋一 東京都台東区上野６丁目16番20号 太陽誘 電株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoichi Mizuno 6-16-20 Ueno Taito-ku, Tokyo Taiyo Induction Co., Ltd.
Claims (1)
3/2（但し、この式において、ｘ，ｙ，ｚは、 ０．０２≦ｘ≦０．３ ０．４≦ｙ≦０．８５ ０．０５≦ｚ≦０．５ ｘ＋ｙ＋ｚ＝１ を満足する数値、ＲｅはＬａ，Ｐｒ，Ｎｄ，Ｓｍ，Ｇ
ｄ，Ｄｙ，Ｅｒ，Ｙｂから選択された１種または２種以
上の希土類元素）で表わされる主成分と、ＳｉＯ2と、
ＣａＯ，ＳｒＯ又はＢａＯから選択された１種または２
種以上の酸化物と、ＭｇＯと、Ｂ2 Ｏ3 と、Ｌｉ2 Ｏと
からなり、 前記主成分が２５〜６０ｗｔ％、ＳｉＯ2 が１０〜４０
ｗｔ％、ＣａＯ，ＳｒＯ又はＢａＯから選択された１種
または２種以上の酸化物が１〜２０ｗｔ％、ＭｇＯが１
〜１５ｗｔ％、Ｂ2 Ｏ3 が３〜３０ｗｔ％、Ｌｉ2 Ｏが
０．１〜３ｗｔ％の割合で含有されている誘電体磁器組
成物。1. The general formula xBaO-yTiO 2 -zReO.
3/2 (However, in this formula, x, y, and z satisfy 0.02 ≦ x ≦ 0.3 0.4 ≦ y ≦ 0.85 0.05 ≦ z ≦ 0.5 x + y + z = 1 Numerical value, Re is La, Pr, Nd, Sm, G
a main component represented by one or more rare earth elements selected from d, Dy, Er, and Yb), SiO 2 , and
1 or 2 selected from CaO, SrO or BaO
It is composed of at least one kind of oxide, MgO, B 2 O 3 , and Li 2 O, and the main component is 25 to 60 wt% and SiO 2 is 10 to 40.
wt%, 1 to 20 wt% of one or more kinds of oxides selected from CaO, SrO, or BaO, and 1 of MgO.
˜15 wt%, B 2 O 3 is 3 to 30 wt%, and Li 2 O is 0.1 to 3 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3272099A JPH0828128B2 (en) | 1991-09-24 | 1991-09-24 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3272099A JPH0828128B2 (en) | 1991-09-24 | 1991-09-24 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0581927A true JPH0581927A (en) | 1993-04-02 |
| JPH0828128B2 JPH0828128B2 (en) | 1996-03-21 |
Family
ID=17509069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3272099A Expired - Fee Related JPH0828128B2 (en) | 1991-09-24 | 1991-09-24 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0828128B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1017069A2 (en) * | 1998-12-31 | 2000-07-05 | Mra Laboratories, Inc. | Capacitor and dielectric ceramic powder based upon a barium borate and zinc silicate dual-component sintering flux |
| KR20030092381A (en) * | 2002-05-29 | 2003-12-06 | 전자부품연구원 | Low-temperatue Co-firing dielectric composition |
| KR101404466B1 (en) * | 2012-05-30 | 2014-06-10 | 삼진산업 주식회사 | Bending apparatus for panel of vehicle |
-
1991
- 1991-09-24 JP JP3272099A patent/JPH0828128B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1017069A2 (en) * | 1998-12-31 | 2000-07-05 | Mra Laboratories, Inc. | Capacitor and dielectric ceramic powder based upon a barium borate and zinc silicate dual-component sintering flux |
| EP1017069A3 (en) * | 1998-12-31 | 2006-04-05 | Mra Laboratories, Inc. | Capacitor and dielectric ceramic powder therefor |
| KR20030092381A (en) * | 2002-05-29 | 2003-12-06 | 전자부품연구원 | Low-temperatue Co-firing dielectric composition |
| KR101404466B1 (en) * | 2012-05-30 | 2014-06-10 | 삼진산업 주식회사 | Bending apparatus for panel of vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0828128B2 (en) | 1996-03-21 |
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