JPH01236514A - Dielectric porcelain material - Google Patents
Dielectric porcelain materialInfo
- Publication number
- JPH01236514A JPH01236514A JP63296584A JP29658488A JPH01236514A JP H01236514 A JPH01236514 A JP H01236514A JP 63296584 A JP63296584 A JP 63296584A JP 29658488 A JP29658488 A JP 29658488A JP H01236514 A JPH01236514 A JP H01236514A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- parts
- glass
- added
- mno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 14
- 229910052573 porcelain Inorganic materials 0.000 title claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims description 13
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 239000011812 mixed powder Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 2
- 238000010304 firing Methods 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 12
- 229910002367 SrTiO Inorganic materials 0.000 description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910002971 CaTiO3 Inorganic materials 0.000 description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 4
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229940116411 terpineol Drugs 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000009766 low-temperature sintering Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 101100481408 Danio rerio tie2 gene Proteins 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- 101100481410 Mus musculus Tek gene Proteins 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- 229910016978 MnOx Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、低温焼結型で高いＱ、高い絶縁抵抗および高
い破壊電圧を有する誘電体磁器材料に係り、特に積層チ
ップコンデンサとして用いるに好適なものに関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a low-temperature sintered dielectric ceramic material having high Q, high insulation resistance, and high breakdown voltage, and is particularly suitable for use as a multilayer chip capacitor. relating to things.
（従来の技術）
磁器コンデンサ用誘電体材料として、従来より、チタン
酸バリウム系あるいは酸化チタン系の磁器材料が汎用さ
れている。これらの材料を用い゛Ｃ第１図に示すような
セラミックコンデンサｌ（図中、２は誘電体、３は内部
電極、４は外部電極である。）を製造する場合は、誘電
体材料を−１、シ仮焼して粉砕した後、ペースト状にし
てからシート状の誘電体２ａを形成し、該誘電体２ａ−
ヒに電極３を塗布し、これを図示のように積層して焼成
したり、あるいは仮焼して粉砕した後、ベースト状にし
てコンデンサの形に誘電体２ａを印刷し、そのＬに電極
３を印刷するという工程を繰返して積層化した後、焼成
することにより製造していた。(Prior Art) Barium titanate-based or titanium oxide-based ceramic materials have been widely used as dielectric materials for ceramic capacitors. When manufacturing a ceramic capacitor l (in the figure, 2 is a dielectric, 3 is an internal electrode, and 4 is an external electrode) as shown in Figure 1 using these materials, the dielectric material is - 1. After calcining and pulverizing, form a paste into a sheet-like dielectric 2a, and form the dielectric 2a-
After coating the electrode 3 on the L, laminating and firing as shown in the figure, or calcining and pulverizing, form a base and print the dielectric 2a in the shape of a capacitor. It was manufactured by repeating the printing process to form layers and then firing them.
（発明か解決しようとする問題点）
このように、従来は、誘電体２がチタン酸バリウム系あ
るいは酸化チタン系の磁器材料により構成されているが
、これらの材料は焼成温度か１２０００Ｃ〜１４００°
Ｃといった高温であるため、内部型Ｊ４ｉ３として、こ
のような高温でも安定なｐｔやＰｄといった非常に高価
な材料を使用しなければならなかった。このため、焼成
のための電力費かかかり、また、コンデンサ等の素子１
個当たりの電極費かあまりにも大きすぎるという問題点
があった。(Problem to be solved by the invention) As described above, conventionally, the dielectric body 2 is made of barium titanate-based or titanium oxide-based porcelain materials, but these materials have a firing temperature of 12,000C to 1,400°C.
Because of the high temperature such as C, very expensive materials such as PT and Pd, which are stable even at such high temperatures, had to be used for the internal mold J4i3. For this reason, electricity costs are required for firing, and elements such as capacitors
The problem was that the cost per electrode was too high.
（問題点を解決するための手段）
上記の問題点を解決するために本発明者等は研究を重ね
た結果、 ＳｒＴｉＯ：＋（ＳｒＯ／ ＴｉＯ２モル比
＝ ０．９５０−１．０５５）１００重量部に対してＣ
ｕＯを１〜ｌＯ重賃部、Ｍｎ酸化物を閘１０に換算して
口〜５重量部添加したものを主成分とし、その主成分１
０（ｌ改ｉ部に対してガラスを１０〜３０重社部混合し
焼結して誘電体磁器材料として使用することにより、焼
成温度を８６０℃〜９００℃にすることを５ｆ能とした
ものである。その結果、この材料を例えば積層チップコ
ンデンサに使用すれば、高価なｐｔや電極Ｐｄ電極を使
用することなく、しかも高いＱ、高い絶縁抵抗、高い破
壊電圧の誘電体磁器材料か提供できることを見出したも
のである。(Means for Solving the Problems) In order to solve the above problems, the present inventors conducted repeated research and found that SrTiO: + (SrO/TiO2 molar ratio = 0.950-1.055) 100 weight C for part
The main component is 1 to 10 weight parts of uO and 5 to 5 parts by weight of Mn oxide in terms of weight 10.
0 (1 modified I part with 10 to 30 pieces of glass mixed and sintered to use as a dielectric porcelain material, making it possible to raise the firing temperature to 860 ° C to 900 ° C. As a result, if this material is used, for example, in a multilayer chip capacitor, it is possible to provide a dielectric ceramic material with high Q, high insulation resistance, and high breakdown voltage without using expensive PT or Pd electrodes. This is what we discovered.
また、本発明は、ＳｒＴｉＯ，（ＳｒＯ／ＴｉＯ，モル
比二〇。Further, the present invention uses SrTiO, (SrO/TiO, molar ratio 20).
９５１１〜１．口５５ ） １００重量部に対してＣｕ
Ｏを口〜１５重州部１Ｍｎ酸化物をＭｎＯに換算して口
〜１．５重量部添加したものに，ＣａＴ２Ｏ３（ＣａＯ
／ＴｉＯ。モル比＝１．０）ｌ口０重ｕ部に対してＣｕ
Ｏを０〜２０ｉ１ｉ部、ｌＡｎ酸化物なＭｎＯに換算し
て０〜１．５重量部添加したものを、その混合率が２．
５〜５０重量％となるように混合し、さらにその混合粉
１００重量部に対してガラス粉末を５〜３０重量部重量
部位結してなることを特徴とするもので、前述の低温で
焼結可能で、前述のように、誘電率およびＱの値の面で
優れ、しかも焼結性の優れた誘電体磁器材料を得ること
を可能としたものである。9511-1. 55) Cu per 100 parts by weight
CaT2O3 (CaO
/TiO. Molar ratio = 1.0) Cu to l mouth 0 weight u part
0 to 20 parts of O and 0 to 1.5 parts by weight of MnO, which is lAn oxide, were added at a mixing ratio of 2.
It is characterized by being mixed at a concentration of 5 to 50% by weight, and further sintering 5 to 30 parts by weight of glass powder to 100 parts by weight of the mixed powder, and sintering at the above-mentioned low temperature. As mentioned above, it is possible to obtain a dielectric ceramic material that is excellent in terms of dielectric constant and Q value, and also has excellent sinterability.
なお、本発明に用いるガラスとしては、ＺｎＯ系中融点
ガラス、中でもＺｎ０５０％〜６０％、８２０□２０％
〜３ｉ１％、 ５ｉ０２５％〜ｌＯ％（重量％）残部か
微縫成分からなるガラスか用いられる。その他。Note that the glass used in the present invention is ZnO-based medium melting point glass, especially Zn0 50% to 60%, 820□20%
-3i1%, 5i025% -10% (wt%) The remainder is a glass consisting of a finely stitched component. others.
Ｐｂ０４２０：＋系、ＰｂＯ−８２０□−３ｉ０２系、
あるいはｐｂｏ、ｌｎＯ、Ｂｉ２Ｏ３，ＢａＯ、Ｈ７（
１＋、Ｓｉｎ□、ＺｒＯ２、ＴｉＯ２゜Ａｌ２Ｏ，、Ｃ
ａＯ、ＳｒＯの群から選択された２種以上の金属耐化物
からなる中融点のガラスか用いられる。Pb0420: + series, PbO-820□-3i02 series,
Or pbo, lnO, Bi2O3, BaO, H7 (
1+, Sin□, ZrO2, TiO2゜Al2O,,C
A medium melting point glass made of two or more metal resistant materials selected from the group of aO and SrO is used.
（作用）
本発明において、誘電体磁器材料の組成を上記のように
設定した理由は次の通りである。(Function) In the present invention, the reason why the composition of the dielectric ceramic material is set as described above is as follows.
ＳｒＯは、出発材料としてＳｒＣＯ３か用いられ、焼結
によってＳｒＯとなるものであり、ＳｒＯ／Ｔｉｅ２モ
ル比が１．０５５以上になるとＱ値が小さくなる傾向に
ある。また、ＳｒＯ／Ｔｉｅ２モル比か０．９５０以下
になると、誘゛市率か小さくなる傾向にある。SrO uses SrCO3 as a starting material and becomes SrO by sintering, and when the SrO/Tie2 molar ratio is 1.055 or more, the Q value tends to decrease. Furthermore, when the SrO/Tie2 molar ratio becomes 0.950 or less, the market attraction rate tends to decrease.
３ｒ’ｒｉＯｉ（各添加物も含む）の仮焼温度は８５０
°Ｃ以ドになると焼結性か悪くなり素地かポーラスな状
態になる傾向にあり、 １１５０°Ｃ以上でも回しよう
な傾向がみられるか、ｔｔｓｏ℃以上の場合は粉砕が困
難となり微粒子か得られないためと考えられる。The calcination temperature of 3r'riOi (including each additive) is 850
When the temperature is below 1150°C, the sinterability deteriorates and the material tends to become porous.If the temperature is above 1150°C, it is difficult to grind, and fine particles are obtained. This is thought to be due to the inability to do so.
ＣｕＯは低温焼結を助成するもので、その添加はＭｎＯ
かあれば必ずしも必要ではないが、その添加量が前記ｌ
ｉ１部より少ないと前記低温焼結が困難となり、かつ誘
電率が小さくなる傾向にあり。CuO supports low-temperature sintering, and its addition is similar to MnO.
If there is, it is not necessary, but the amount added is above l.
If the amount is less than 1 part, the low-temperature sintering becomes difficult and the dielectric constant tends to decrease.
ＣａＴ、０３を含まないものにおいて、ＣｕＯのＳｒＴ
ｉＯ，に対する添加量が前記１５玉量部より大きくなる
とＱ値が小さくなるという傾向がある。In those not containing CaT, 03, SrT of CuO
When the amount added to iO is larger than the above-mentioned 15 ball parts, there is a tendency that the Q value becomes small.
Ｍｎ酸化物は、出発材料としてＭｎＣ０，が用いられ、
焼結によってＭｎ酸化物となるものであり、ＣｕＯと同
じく低温焼成を助成する作用と還元防止材としての作用
をなすものであるか、ＣｕＯが混合されていればこれは
必ずしも必要ではなく、またこのＭｎｍ化物は上述のよ
うな焼成温度において。Mn oxide uses MnC0 as a starting material,
It becomes Mn oxide by sintering, and like CuO, it has the effect of supporting low-temperature firing and acting as a reduction prevention material, or if CuO is mixed, this is not necessarily necessary. This Mnm compound is fired at the above-mentioned firing temperature.
ＭｎＯｘの形態をなし、ｘ＝１〜２の範囲内あると考え
られるか、ＭｎＯに換算して１ｉｆｉ部以下では効果か
薄く、前記ＣａＴ２Ｏ：＋を含まないものにおいて。It is in the form of MnOx, and is considered to be within the range of x=1 to 2, or is less effective if it is less than 1 ifi part in terms of MnO, and does not contain CaT2O:+.
５重量部以上の添加量になると、Ｑ値および誘電率か小
さくなる傾向がある。When the amount added is 5 parts by weight or more, the Q value and dielectric constant tend to decrease.
また、焼結助材としてのガラスの量については、前記主
成分１００重量部に対して５重ｊｉ１部より少ないと焼
結助材としての働きか不十分である上、Ｑ値か小さくな
り、また、３０重量部より多くなると誘電率か小さくな
る傾向にある。Regarding the amount of glass as a sintering aid, if it is less than 1 part of 5-fold ji per 100 parts by weight of the main component, it will not only function insufficiently as a sintering aid, but also have a small Q value. Moreover, when the amount exceeds 30 parts by weight, the dielectric constant tends to decrease.
ＣａＴ２Ｏ３を含むものにおいて、５ｒＴｉ０３（各添
加物を含む）とＣａＴｉ０． （各添加物を含む）の混
合率ではＣａＴｉＯ３か２．５重量％より小になると混
合の効果がうすいが、 ＳｒＴｉＯ，： ＣａＴｉ０＊
＝ ７０：３０に焼結性のピークがあり，ＣａＴｉ０．
５０重量％より多く混合すると焼結性か悪くなり誘電率
も小さくなる。Among those containing CaT2O3, 5rTi03 (including each additive) and CaTi0. (Including each additive), the mixing effect is weak when CaTiO3 is less than 2.5% by weight, but SrTiO: CaTi0*
= 70:30 has a sinterability peak, and CaTi0.
If more than 50% by weight is mixed, the sinterability will deteriorate and the dielectric constant will decrease.
また、 ＣａＴ２Ｏ：＋を含むものにおいても、ＣｕＯ
の添加は必ずしも必要ではないか、５ｒＴ２０ｚもしく
はＣａＴ２Ｏ３に１重量部以上添加することにより、低
温焼結がより良好に行なわれ、誘電率も大きくなる傾向
にある。５ｒＴｚ（ｈ ： （：ａＴｚＯ＋＝ ７０
： ３０の混合で使用する場合は５ｒＴｉ０３側にその
１００重量部に対してＣｕ０ｆｔ１５重量部より多く添
加するとＱ値が小さくなる傾向にあり、（：ａＴｉＯ３
側にその１００重量部に対して２０重量部より多く添加
するとＱ値が小さくなる傾向にある。ＳｒＴｉＯ＋、
ＣａＴｉＯ３の混合粉に対してＣｕＯかトータル６屯に
％より多くなるとＱ（ｆｉか小さくなる傾向にある。In addition, even in those containing CaT2O:+, CuO
The addition of is not necessarily necessary, but by adding 1 part by weight or more to 5rT20z or CaT2O3, low-temperature sintering tends to be better and the dielectric constant tends to increase. 5rTz(h: (:aTzO+=70
: When used in a mixture of 5rTiO3 and 100 parts by weight, the Q value tends to decrease if more than 15 parts by weight of Cu0ft is added to the 5rTiO3 side.
If more than 20 parts by weight is added per 100 parts by weight, the Q value tends to decrease. SrTiO+,
When the amount of CuO exceeds 6 tons of CaTiO3 mixed powder, Q(fi) tends to become smaller.
ＣａＴ、０３を含むものにおいて、Ｍｎ酸化物は、Ｃｕ
Ｏが混合されていればこれは必ずしも必要ではなく、ま
たこのＭｎ酸化物は上述のような焼成温度において、Ｍ
ｎＯ，の形ｊムをなし、ｘ＝１〜２の範囲内にあると考
えられるが、ＭｎＯに換算して０．５〜１．５重量部添
加することによりＱ値の向上に効果がある。５ｒＴ２０
ｚ ： ＣａＴ２Ｏ：ｌ＝ ７０ ： ３０の混合粉に
おいてＭｎＯのトータル量か２１量％より多くなると誘
′准率が小さくなる傾向かある。In those containing CaT, 03, the Mn oxide is Cu
This is not necessarily necessary if O is mixed, and this Mn oxide can be mixed with Mn at the above firing temperature.
It has the form of nO, and is considered to be within the range of x = 1 to 2, but adding 0.5 to 1.5 parts by weight in terms of MnO is effective in improving the Q value. . 5rT20
In a mixed powder of z:CaT2O:l=70:30, if the total amount of MnO exceeds 21% by weight, the attractivity tends to decrease.
また、焼結助材としてのガラスの量については前記主成
分１００重量部に対して５重陽部より少ないと焼結助材
としての働きか不十分である」二、Ｑ値が小さくなり、
また、３０重縫部より多くなると誘電率か小さくなる傾
向にある。Furthermore, if the amount of glass as a sintering aid is less than 5 parts by weight based on 100 parts by weight of the main component, its function as a sintering aid will be insufficient.
Further, when the number of seams exceeds 30, the dielectric constant tends to decrease.
（実施例） 次に本発明の詳細な説明する。(Example) Next, the present invention will be explained in detail.
［実施例１］
まず市販の５ｒＣＯ＊とＴｉＯ２と、焼成により生成す
るＳｒＴｉＯ，におけるＳｒＯ／ＴｉＯ□モル比かｌ二
ｌとなるように秤量し、その５ｒｃＯ：＋とＴｉＯ２の
５ｒＴｉ０３に換算した１００重量部に対し、ＣｕＯを
１．０重量部。[Example 1] First, commercially available 5rCO* and TiO2 and SrTiO produced by firing were weighed so that the molar ratio of SrO/TiO□ was 12l, and the 5rcO:+ and TiO2 were converted to 5rTi03 of 100 1.0 parts by weight of CuO.
ＭｎＣ０，をＭｎＯに換算して１．０重量部となるよう
に秤量し、これに純水２００重量部、モノボール２００
重量部加え、ボールミルに入れて１６時間混合し、脱水
乾燥した。そしてこの乾燥粉末を５０ｋｇ／ｃｍ２で仮
プレスし、８５０℃で仮焼し、ライカイ機で３０分粗粉
砕した。MnC0, was weighed to be 1.0 parts by weight in terms of MnO, and to this was added 200 parts by weight of pure water and 200 parts by weight of Monoball.
Parts by weight were added, placed in a ball mill, mixed for 16 hours, and dehydrated and dried. This dry powder was then temporarily pressed at 50 kg/cm2, calcined at 850°C, and coarsely pulverized for 30 minutes using a Raikai machine.
その粉末ｔｏｏ、１１部にガラス（Ｚｎ０５０％〜６０
％、 Ｂ２０□２０％〜３０％、 Ｓｉ０□ ５％〜１
０％ （重量％）、残部か微量成分からなるガラス）を
２０重量部加え、ボールミルに入れて２４時間混合粉砕
し。The powder too, 11 parts glass (Zn050%~60
%, B20□20%~30%, Si0□5%~1
0% (weight %), the remainder (glass consisting of trace components) was added, and the mixture was placed in a ball mill and mixed and pulverized for 24 hours.
脱水乾燥した。Dehydrated and dried.
そして、乾燥粉末５０ｇに、接着剤としてエチルセルロ
ース（Ｎ−１００）を溶媒としてのターピネオールに８
重量％溶解した溶液１８ｇ 、溶剤としてターピネオー
ル４０ｇを秤量し、ライカイ機で３時間攪拌し、ペース
トを作った。Then, add 50 g of dry powder to 80 g of ethyl cellulose (N-100) as an adhesive and terpineol as a solvent.
18 g of a solution dissolved in weight percent and 40 g of terpineol as a solvent were weighed out and stirred in a Raikai machine for 3 hours to make a paste.
このペーストおよびＡｇ粉末のペーストをスクリーン印
刷法により交１にＪＡ層してチップコンデンサを作り、
乾燥後、焼成寸法４．５ ｘ ］、２ｓｎのチップに切
断し、 ８９０°Ｃで２吟間空気中で焼成してチップコ
ンデンサを作成した。これにより得られた諸性性は表１
に示す通りであった。表１において、Ｔ２は焼成温度（
°Ｃ）、ε、は比誘電率、ＩＲは絶縁抵抗（Ω）、Ｖａ
は破壊電圧（Ｖ）で５０終■間隔の場合を示し、また、
Ｓｈは収縮率（％）である。A chip capacitor was made by layering this paste and Ag powder paste in a cross-layered JA layer using a screen printing method.
After drying, it was cut into chips with firing dimensions of 4.5 x ] and 2 sn, and fired at 890°C for 2 minutes in air to produce chip capacitors. The various properties obtained from this are shown in Table 1.
It was as shown in In Table 1, T2 is the firing temperature (
°C), ε is the relative dielectric constant, IR is the insulation resistance (Ω), Va
indicates the case where the breakdown voltage (V) is 50 cm apart, and
Sh is the shrinkage rate (%).
表１
表１に示す本実施例の特性は、従来のコンデンサの特性
に比較しても劣らない特性である。Table 1 The characteristics of this example shown in Table 1 are comparable to those of conventional capacitors.
［実施例２］
Ｌ記実施例１における５ｒＣＯ：１． Ｔｉ０６のモル
比、Ｃｕｂ、 ＭｎＯの添加量、ガラスの添加量を変え
、実施例１と回し方法でチップコンデンサを製造した。[Example 2] 5rCO in L Example 1: 1. Chip capacitors were manufactured by the same method as in Example 1, changing the molar ratio of Ti06, the amount of Cub, MnO, and the amount of glass.
そのａｔ成と２特性はそれぞれ表２−１、表２−２に示
す通りであった。Its at composition and two characteristics were as shown in Table 2-1 and Table 2-2, respectively.
（以下余白）
表２−１
表λ−２
［実施例３１
まず市販の５ｒＣＯ＋とＴｉＯ□と、焼成により生成す
る５ｒＴｉ０３におけるＳｒＯ／Ｔｉ０ｚモル比が１．
０２５となるようにＩ平槍し、そのＳｒＣＯ３°とＴｉ
Ｏ２のＳｒＴｉＯ，に換算した＋００１！ｉ１部に対し
、 （：ｕＯを１．０重量部、Ｍ ｎ Ｃ０２をＭｎＯ
に換算して１．０重量部となるように秤量し、またＣａ
Ｃ０＋とＴｉ０ａとを、これらを焼成することにより生
成するＣａＴｉＯ３におけるＣａＯ／ＴｉＯ□モル比が
１０口となるようにＪＷｆｉｔし、そのＣａＣ０，ｊと
ＴｉＯ２のＣａＴｉ０．に換算した １００重量部に対
し、ＣＩＯを１５重量部秤量し、この両者を別々のボー
ルミルに入れ、これらにそれぞれ純水を２５０重量部加
えて１６時間混合し、脱水乾燥した。そしてこの乾燥粉
末を５０ｋｇ／ｃｍ’で仮プレスし、１０００℃でおの
おの仮焼し、ライカイ機で１時間粗粉砕した。その粉末
ＳｒＴｉＯ，１を３５重量部、 ＣａＴｉ０：＋を１５
重量部にガラス粉末（Ｚｎ０５０〜６［１％、 Ｂ２０
，２０〜：１０％、 Ｓｉｎｇ ５〜１０％（爪間％）
、残部が微量成分からなるガラス）を２．５重量部加え
、これに純水 １６０ｉｌｊ量部加え、ボールミルに入
れて２４時間混合粉砕し、脱水乾燥した。その乾燥粉末
をさらに５０ｋｇ／ｃｍ２で仮プレスし８００°Ｃて再
仮焼を行いライカイ機で１時間粗粉砕した。その粉末を
再度ボールミルにて２４詩間微粉砕し脱水乾燥した。(Leaving space below) Table 2-1 Table λ-2 [Example 31 First, the SrO/Ti0z molar ratio in commercially available 5rCO+ and TiO□ and 5rTi03 produced by firing is 1.
025, and its SrCO3° and Ti
+001 converted to SrTiO of O2! For 1 part of i, (: 1.0 part by weight of uO, MnO of MnC02)
Calculated to 1.0 parts by weight, Ca
C0+ and Ti0a are JWfitted so that the CaO/TiO□ molar ratio in CaTiO3 produced by firing them is 10, and the CaTi0. 15 parts by weight of CIO was weighed out based on 100 parts by weight converted to 100 parts by weight, and both were placed in separate ball mills. 250 parts by weight of pure water were added to each of these and mixed for 16 hours, followed by dehydration and drying. This dry powder was then pre-pressed at 50 kg/cm', calcined at 1000°C, and coarsely pulverized for 1 hour using a Raikai machine. 35 parts by weight of the powder SrTiO,1, 15 parts by weight of CaTi0:+
Glass powder (Zn050-6 [1%, B20
, 20~: 10%, Sing 5~10% (% between nails)
2.5 parts by weight of glass (with the remainder consisting of trace components) were added, 160 parts of pure water was added thereto, the mixture was mixed and ground in a ball mill for 24 hours, and dehydrated and dried. The dried powder was further pre-pressed at 50 kg/cm2, re-calcined at 800°C, and coarsely pulverized for 1 hour using a Raikai machine. The powder was again pulverized for 24 minutes using a ball mill and dehydrated and dried.
そして乾燥粉末５０ｇに、接着剤としてエチルセルロー
ス（Ｎ −１００）を溶媒としてのターピネオールに８
重量％溶解した溶液１８ｇ、溶剤としてターピネオール
４０ｇを秤量し、ライカイ機で３時間攪拌し、ペースト
を作った。Then, 50 g of dry powder was added with ethyl cellulose (N-100) as an adhesive and terpineol as a solvent.
18 g of a solution dissolved in weight percent and 40 g of terpineol as a solvent were weighed out and stirred for 3 hours using a Raikai machine to form a paste.
このペーストおよびｈｇ粗粉末ペーストをスクリーン印
刷法により交力］に請層してチップコンデンサを作り、
乾・燥後、焼成寸法４．５ Ｘ３．２−一のチウブに切
断し、 ８９０℃で２時間空気中て焼成してチップコン
デンサを作成した。これにより得られた諸特性は表３に
示す通りであった。A chip capacitor was made by layering this paste and Hg coarse powder paste by screen printing method.
After drying, it was cut into chips with firing dimensions of 4.5 x 3.2-1, and fired in air at 890°C for 2 hours to produce chip capacitors. The various properties obtained were as shown in Table 3.
（以下余白）
表 ３
表３に示す本実施例の特性は、従来のコンデンサの特性
に比較しても劣らない特性である。特に誘電率ε５は前
記実施例に比較して優れており、Ｑの値も先願のものと
ほぼ同等の値か得られた。(Left below) Table 3 The characteristics of this example shown in Table 3 are comparable to those of conventional capacitors. In particular, the dielectric constant ε5 was superior to that of the previous example, and the Q value was also approximately the same as that of the previous application.
［実施例４］
上記実施例３における工程を用い、 ＣａＴｉ（１＋を
混入しないものにおいて、５ｒＣ０３，ＴｉＯ２のモル
比および仮焼温度を変え、実施例３と同じ方法でチップ
コンデンサを製造した。その組成と諸特性はそれぞれ表
４−１、表４−２に示す通ってあった。[Example 4] Using the process in Example 3 above, a chip capacitor was manufactured in the same manner as in Example 3, except that CaTi(1+ was not mixed) and the molar ratio of 5rC03 and TiO2 and the calcination temperature were changed. The composition and various properties were as shown in Tables 4-1 and 4-2, respectively.
表４−１、表４−２に示すように、ガラスの混合量を前
記実施例１のものより少なくすることにより、誘電率ε
３か２００以上となるものか得られ、Ｑの値も前記実施
例１のものより大きな値か得られた。As shown in Tables 4-1 and 4-2, by reducing the amount of glass mixed than that of Example 1, the dielectric constant ε
3 or 200 or more, and the Q value was also larger than that of Example 1.
［実施例５］
表５−１および表５−２は、 ＳｒＴｉＯｚに対するＣ
ａＴｉ０＋の混合比（を量比）を、 １００：０ないし
５゜：５０に変えた場合の諸特性を示すものであり、Ｓ
ｒＴｉＯ：＋に対するＣａＴｉ０ｉの混合率が５０：５
０以下より小さい場合、誘１ｒＬ率ｃ５が２００以上と
なり、Ｑの値も前記先願のものより大きな値か得られた
。[Example 5] Tables 5-1 and 5-2 show that C for SrTiOz
It shows various characteristics when the mixing ratio (quantity ratio) of aTi0+ is changed from 100:0 to 5°:50, and S
The mixing ratio of CaTiOi to rTiO:+ is 50:5
When it was less than 0, the dielectric constant c5 was 200 or more, and the value of Q was also larger than that of the previous application.
［実施例６］
表６−１１表６−２はＳｒＴｉＯ，に対するＣａＴｉＯ
３の混合比（重量比）を７０：３０とし、 ＳｒＴｉＯ
＋あるいはＣａＴｉ０ｉに対する（：ｕＯ，ＭｎＯの混
合率を変えた場合の組成および諸特性をそれぞれ示すも
のであり、いずれも誘電率ε８として２００以上ないし
ＺＯＯに近い高い値が得られた。たたし’ＣｕＯの量が
増大すると、Ｑの値の低下か見られる。[Example 6] Table 6-11 Table 6-2 shows CaTiO for SrTiO,
The mixing ratio (weight ratio) of 3 is 70:30, and SrTiO
+ or CaTi0i (: shows the composition and various properties when changing the mixing ratio of uO and MnO, and in both cases, a high value of dielectric constant ε8 of 200 or more or close to ZOO was obtained. 'As the amount of CuO increases, a decrease in the value of Q is observed.
［実施例７］
また，ＣａＴｉＯ３を含まないものにおいて、ガラスの
添加にを２０重量部、３０重量部に増加させた場合の組
成、特性をそれぞれ表７−１、表７−２に示す。表７−
１のように、ガラスの混合量を主成分１００ ？Ｂに対
してそれぞれ２０，３０重量部と増大させた場合、表７
−２のように、誘１ｕ率〔５か低下する傾向かある。[Example 7] Table 7-1 and Table 7-2 show compositions and properties when the amount of glass added was increased to 20 parts by weight and 30 parts by weight, respectively, in cases where CaTiO3 was not included. Table 7-
As in 1, the amount of glass mixed is 100% of the main component? Table 7 when increasing B by 20 and 30 parts by weight, respectively.
-2, there is a tendency for the dielectric constant to decrease by 5.
（以下余白）
表 ５−１
（発１１１１の効果）
請求項１によれば、焼結温度を８６０°Ｃ〜９００°Ｃ
と低温化することかできるため、焼成に要する電 １
カ費か低減されると共に、電極としてへｇ等の導体か焼
付可能となり、これによって′電極の価格低減かＨ（能
となる。また、従来技術によるチップコンデンサと比較
しても劣らない特性のものを得ることができる。(Left below) Table 5-1 (Effects of Hatsu 1111) According to claim 1, the sintering temperature is 860°C to 900°C.
Since the temperature can be lowered, the electricity required for firing is 1
In addition to reducing the cost, it becomes possible to bake a conductor such as aluminum as an electrode, which reduces the cost of the electrode.It also has characteristics comparable to those of conventional chip capacitors. can get things.
請求項２によれば、請求項１の効果に加え、さらに焼結
性か良好になるという効果か得られる。According to claim 2, in addition to the effect of claim 1, the sinterability is further improved.
第１図は本発明の適用対象の一例であるチップコンデン
サを示す側面図である。FIG. 1 is a side view showing a chip capacitor, which is an example of an object to which the present invention is applied.
Claims (2)
９５０〜１．０５５）１００重量部に対してＣｕＯを０
〜１５重量部、Ｍｎ酸化物をＭｎＯに換算して０〜５重
量部添加したものを主成分とし、その主成分１００重量
部に対してガラスを５〜３０重量部混合し焼結してなる
ことを特徴とする誘電体磁器材料。1. SrTiO_3 (SrO/TiO_2 molar ratio=0.
950-1.055) 0 CuO per 100 parts by weight
~15 parts by weight, 0 to 5 parts by weight of Mn oxide converted to MnO are added as the main component, and 5 to 30 parts by weight of glass is mixed with 100 parts by weight of the main component and sintered. A dielectric porcelain material characterized by:
９５０〜１．０５５）１００重量部に対してＣｕＯを０
〜１５重量部、Ｍｎ酸化物をＭｎＯに換算して０〜１．
５重量部添加したものに，ＣａＴ＿２Ｏ＿３（ＣａＯ／
ＴｉＯ＿２モル比＝１．０）１００重量部に対してＣｕ
Ｏを０〜２０重量部、Ｍｎ酸化物をＭｎＯに換算して０
〜１．５重量部添加したものを、その混合率が２．５〜
５０重量％となるように混合し、さらにその混合粉１０
０重量部に対してガラス粉末を５〜３０重量部混合し焼
結してなることを特徴とする誘電体磁器材料。2. SrTiO_3 (SrO/TiO_2 molar ratio=0.
950-1.055) 0 CuO per 100 parts by weight
~15 parts by weight, Mn oxide converted to MnO: 0 to 1.
CaT_2O_3 (CaO/
TiO_2 molar ratio = 1.0) Cu to 100 parts by weight
O is 0 to 20 parts by weight, Mn oxide is 0 when converted to MnO.
〜1.5 parts by weight is added, and the mixing ratio is 2.5〜
Mix to make it 50% by weight, and further add 10% of the mixed powder.
A dielectric ceramic material characterized in that it is made by mixing 5 to 30 parts by weight of glass powder to 0 parts by weight and sintering the mixture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63296584A JP3030557B2 (en) | 1987-11-28 | 1988-11-23 | Electronic components using dielectric porcelain materials |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30134787 | 1987-11-28 | ||
| JP62-301347 | 1987-11-28 | ||
| JP63296584A JP3030557B2 (en) | 1987-11-28 | 1988-11-23 | Electronic components using dielectric porcelain materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01236514A true JPH01236514A (en) | 1989-09-21 |
| JP3030557B2 JP3030557B2 (en) | 2000-04-10 |
Family
ID=26560741
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63296584A Expired - Fee Related JP3030557B2 (en) | 1987-11-28 | 1988-11-23 | Electronic components using dielectric porcelain materials |
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| Country | Link |
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| JP (1) | JP3030557B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5195026A (en) * | 1989-09-12 | 1993-03-16 | Hitachi, Ltd. | Method and apparatus for computer controlled nonlinear optimization |
| US5723395A (en) * | 1995-06-30 | 1998-03-03 | Tdk Corporation | Dielectric ceramic composition, its preparation method, multilayer chip capacitor, dielectric filter, and electronic parts |
| EP1978004A1 (en) * | 2007-03-30 | 2008-10-08 | TDK Corporation | Dielectric ceramic composition, complex electronic device and multilayer ceramic capacitor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4618383B2 (en) | 2008-05-12 | 2011-01-26 | Ｔｄｋ株式会社 | Dielectric ceramic composition, multilayer composite electronic component, multilayer common mode filter, multilayer ceramic coil and multilayer ceramic capacitor |
| CN102216238B (en) * | 2008-11-21 | 2013-05-01 | 株式会社村田制作所 | Ceramic composition, ceramic green sheet, and ceramic electronic component |
| KR101828748B1 (en) * | 2017-05-31 | 2018-02-13 | 김진석 | Functional floating apparatus using magnet |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59227769A (en) * | 1983-06-06 | 1984-12-21 | 太陽誘電株式会社 | Dielectric ceramic composition |
-
1988
- 1988-11-23 JP JP63296584A patent/JP3030557B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59227769A (en) * | 1983-06-06 | 1984-12-21 | 太陽誘電株式会社 | Dielectric ceramic composition |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5195026A (en) * | 1989-09-12 | 1993-03-16 | Hitachi, Ltd. | Method and apparatus for computer controlled nonlinear optimization |
| US5723395A (en) * | 1995-06-30 | 1998-03-03 | Tdk Corporation | Dielectric ceramic composition, its preparation method, multilayer chip capacitor, dielectric filter, and electronic parts |
| EP1978004A1 (en) * | 2007-03-30 | 2008-10-08 | TDK Corporation | Dielectric ceramic composition, complex electronic device and multilayer ceramic capacitor |
| JP2008254936A (en) * | 2007-03-30 | 2008-10-23 | Tdk Corp | Dielectric ceramic composition, complex electronic device and multilayer ceramic capacitor |
| US7799718B2 (en) | 2007-03-30 | 2010-09-21 | Tdk Corporation | Dielectric ceramic composition, complex electronic device and multilayer ceramic capacitor |
| TWI412046B (en) * | 2007-03-30 | 2013-10-11 | Tdk Corp | Dielectric ceramic composition, complex electronic device and multilayer ceramic capacitor |
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| Publication number | Publication date |
|---|---|
| JP3030557B2 (en) | 2000-04-10 |
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