JPH0855519A - Dielectric ceramic composition - Google Patents

Dielectric ceramic composition

Info

Publication number
JPH0855519A
JPH0855519A JP6190797A JP19079794A JPH0855519A JP H0855519 A JPH0855519 A JP H0855519A JP 6190797 A JP6190797 A JP 6190797A JP 19079794 A JP19079794 A JP 19079794A JP H0855519 A JPH0855519 A JP H0855519A
Authority
JP
Japan
Prior art keywords
ceramic composition
dielectric ceramic
dielectric
cuo
zno
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6190797A
Other languages
Japanese (ja)
Inventor
Koichi Fukuda
晃一 福田
Masataka Fujinaga
昌孝 藤永
Masatoshi Takeda
将利 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Priority to JP6190797A priority Critical patent/JPH0855519A/en
Publication of JPH0855519A publication Critical patent/JPH0855519A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a dielectric ceramic composition large in a dielectric constant epsilonr also a no-load Q value and moreover small in the temperature coefficient tauf of a resonance frequency. CONSTITUTION:A dielectric ceramic composition is composed of barium, titanium, neodymium, samarium, bismuth, and oxygen; and the main component of this composition is expressed as xBaO-yTiO2-zNd2O3-tSm2O3-wBi2O3 (in this formula, 0.1<=x<=0.2, 0.5<=y<=0.8, 0.01<=z<=0.2, 0.01<=t<=0.2, 0.005<=w<=0.05, and x+y+z+t+w=1). This dielectric ceramic composition contains glass power composed of PbO, ZnO, and B2O3 and CuO as a sub-component, and the content (a) (wt.%) of the sub-component glass power and that (b)(wt.%) of the CuO are 1<=a<=25 and 0.5<=b<=5 respectively.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、誘電体共振器等の材料
として好適な誘電体磁器組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition suitable as a material for a dielectric resonator or the like.

【0002】[0002]

【従来技術およびその問題点】近年、マイクロ波回路の
集積化に伴い、小型で高性能の誘電体共振器が求められ
ている。このような誘電体共振器に使用される誘電体磁
器組成物には、比誘電率εr が大きいこと、無負荷Qが
大きいこと、共振周波数の温度係数τf が小さいこと等
の特性が要求されている。
2. Description of the Related Art In recent years, with the integration of microwave circuits, a compact and high-performance dielectric resonator is required. The dielectric ceramic composition used for such a dielectric resonator is required to have characteristics such as a large relative permittivity ε r , a large unloaded Q, and a small temperature coefficient τ f of the resonance frequency. Has been done.

【0003】このような誘電体磁器組成物として、Ba
O−TiO2 −Nd2 3 系の誘電体磁器組成物につい
て提案〔Ber.Dt.Keram.Ges.,55(1978)Nr.7;特開昭60
−35406号公報〕、あるいはBaO−TiO2 −N
2 3 −Bi2 3 系(特開昭62−72558号公
報)について提案されている。
As such a dielectric ceramic composition, Ba
Proposed O-TiO 2 —Nd 2 O 3 based dielectric ceramic composition [Ber. Dt. Keram. Ges., 55 (1978) Nr. 7;
-35406 JP], or BaO-TiO 2 -N
A d 2 O 3 -Bi 2 O 3 system (Japanese Patent Laid-Open No. 62-72558) has been proposed.

【0004】最近、誘電体磁器組成物を積層した積層チ
ップコンデンサ、積層誘電体共振器等が開発されてお
り、磁器組成物と内部電極との同時焼成による積層化が
行われている。しかしながら、前記誘電体磁器組成物は
焼成温度が1300℃〜1400℃と高いため内部電極
との同時焼成を行うことは困難な面があり、積層化構造
とするためには電極材料として高温に耐えるパラジウム
(Pd)や白金(Pt)等の材料に限定されていた。こ
のため、電極材料として安価な銀(Ag)、銀−パラジ
ウム(Ag−Pd)、銅(Cu)を使用して1200℃
以下の低温で同時焼成できる誘電体磁器組成物が求めら
れている。
Recently, a laminated chip capacitor, a laminated dielectric resonator, etc. in which dielectric ceramic compositions are laminated have been developed, and the ceramic composition and internal electrodes are laminated by simultaneous firing. However, since the firing temperature of the dielectric ceramic composition is as high as 1300 ° C. to 1400 ° C., it is difficult to perform simultaneous firing with the internal electrodes, and in order to form a laminated structure, it can withstand high temperatures as an electrode material. It has been limited to materials such as palladium (Pd) and platinum (Pt). Therefore, inexpensive silver (Ag), silver-palladium (Ag-Pd), and copper (Cu) are used as the electrode material at 1200 ° C.
There is a demand for a dielectric ceramic composition that can be co-fired at the following low temperatures.

【0005】[0005]

【発明の目的】本発明の目的は、誘電体共振器等の材料
として優れた特性、特に高誘電率で、無負荷Qが大き
く、共振周波数の温度変化が小さいという特性を有し、
しかも低温で焼成した場合にも焼結性が良好な誘電体磁
器組成物を提供することにある。
It is an object of the present invention to have excellent characteristics as a material for a dielectric resonator or the like, in particular to have a high dielectric constant, a large no-load Q, and a small change in resonance frequency with temperature.
Moreover, it is to provide a dielectric ceramic composition having good sinterability even when fired at a low temperature.

【0006】[0006]

【問題点を解決するための手段】本発明は、主成分が組
成式、xBaO−yTiO2 −zNd2 3 −tSm2
3 −wBi2 3 (式中、0.1≦x≦0.2、0.
5≦y≦0.8、0.01≦z≦0.2、0.01≦t
≦0.2、0.005≦w≦0.05、x+y+z+t
+w=1である。)で表されるバリウム、チタン、ネオ
ジム、サマリウム、ビスマスおよび酸素からなる誘電体
磁器組成物であり、かつ副成分としてPbO、ZnOお
よびB2 3 から構成されるガラス粉末ならびにCuO
を含有し、主成分に対する副成分ガラス粉末の含有量a
(重量%)が1≦a≦25、CuOの含有量b(重量
%)が0.5≦b≦5であることを特徴とする誘電体磁
器組成物に関する。
Means for Solving the problems] The present invention is a main component composition formula, xBaO-yTiO 2 -zNd 2 O 3 -tSm 2
O 3 -wBi 2 O 3 (wherein 0.1 ≦ x ≦ 0.2, 0.
5 ≦ y ≦ 0.8, 0.01 ≦ z ≦ 0.2, 0.01 ≦ t
≦ 0.2, 0.005 ≦ w ≦ 0.05, x + y + z + t
+ W = 1. ) Is a dielectric ceramic composition composed of barium, titanium, neodymium, samarium, bismuth, and oxygen, and is a glass powder and CuO composed of PbO, ZnO, and B 2 O 3 as auxiliary components.
And the content a of the accessory glass powder with respect to the main component a
(% By weight) 1 ≦ a ≦ 25, CuO content b (% by weight) 0.5 ≦ b ≦ 5, relates to a dielectric ceramic composition.

【0007】本発明によれば、組成式xBaO−yTi
2 −zNd2 3 −tSm2 3−wBi2 3 で表
される誘電体磁器組成物に副成分としてPbO、ZnO
およびB2 3 から構成されるガラス粉末ならびにCu
Oを含有させることにより、低温焼結でき、かつ高誘電
率で、無負荷Qが大きく、共振周波数の温度変化が小さ
いという特性を有する誘電体磁器組成物を得ることがで
きる。
According to the invention, the composition formula xBaO-yTi
O 2 -zNd 2 O 3 -tSm 2 O 3 -wBi PbO as a sub-component in the dielectric ceramic composition represented by 2 O 3, ZnO
And a glass powder composed of B 2 O 3 and Cu
By containing O, it is possible to obtain a dielectric ceramic composition which can be sintered at a low temperature, has a high dielectric constant, has a large unloaded Q, and has a small temperature change in the resonance frequency.

【0008】本発明において、BaOのモル分率が過度
に大きい場合には、共振しなくなり、過度に小さい場合
には、誘電率、無負荷Qが小さくなる。TiO2 のモル
分率が過度に大きい場合には、共振周波数の温度係数が
大きくなり、過度に小さい場合には、誘電率が小さくな
る。Nd2 3 のモル分率が過度に大きい場合には、誘
電率、無負荷Qが小さくなり、過度に小さい場合には、
誘電率が小さくなる。Sm2 3 のモル分率が過度に大
きい場合には、誘電率が小さくなり、過度に小さい場合
には、無負荷Qが小さくなる。Bi2 3 のモル分率が
過度に大きい場合には、誘電率、無負荷Qが小さくな
り、過度に小さい場合には、共振周波数の温度係数が大
きくなる。
In the present invention, when the molar fraction of BaO is excessively large, resonance does not occur, and when it is excessively small, the dielectric constant and the no-load Q become small. When the mole fraction of TiO 2 is too large, the temperature coefficient of the resonance frequency becomes large, and when it is too small, the dielectric constant becomes small. When the mole fraction of Nd 2 O 3 is excessively large, the dielectric constant and unloaded Q become small, and when it is excessively small,
Dielectric constant decreases. When the mole fraction of Sm 2 O 3 is too large, the dielectric constant becomes small, and when it is too small, the no-load Q becomes small. When the mole fraction of Bi 2 O 3 is excessively large, the dielectric constant and the no-load Q become small, and when it is excessively small, the temperature coefficient of the resonance frequency becomes large.

【0009】また、本発明において、主成分に対する副
成分PbO、ZnOおよびB2 3から構成されるガラ
ス粉末の含有量a(重量%)ならびにCuOの含有量b
(重量%)が過度に大きい場合には、共振しなくなり、
また、PbO、ZnOおよびB2 3 から構成されるガ
ラス粉末ならびにCuOの含有量が過度に小さいかゼロ
の場合には、1200℃以下での低温焼成が困難にな
る。したがって、副成分PbO、ZnOおよびB2 3
から構成されるガラス粉末の含有量aならびにCuOの
含有量bは上記範囲に設定される。副成分ガラス粉末に
おいて、PbO、ZnOおよびB2 3 の構成割合は特
に限定されないが、ZnOの含有量が過度に大きい場合
にはガラスの軟化点が上昇し、ガラス粉末添加による低
温焼成が困難になるため、ガラス粉末中のZnOの含有
量は50重量%以下が好ましい。
In the present invention, the content a (% by weight) of the glass powder composed of the subordinate components PbO, ZnO and B 2 O 3 and the content b of CuO relative to the main component.
If (wt%) is too large, it will not resonate,
Further, when the content of glass powder composed of PbO, ZnO and B 2 O 3 and CuO is too small or zero, low temperature firing at 1200 ° C. or lower becomes difficult. Therefore, the subcomponents PbO, ZnO and B 2 O 3
The content a of the glass powder and the content b of CuO composed of are set in the above ranges. In the accessory glass powder, the composition ratios of PbO, ZnO and B 2 O 3 are not particularly limited, but when the content of ZnO is excessively large, the softening point of the glass rises and low temperature firing by adding glass powder is difficult. Therefore, the content of ZnO in the glass powder is preferably 50% by weight or less.

【0010】なお、本発明において、第三成分としてN
2 5 、MnO、Al2 3 およびZnOのうち少な
くとも一種を含有させることにより共振周波数の温度係
数τ f の絶対値をさらに小さくすることができる。主成
分に対する第三成分の含有量c(重量%)は過度に大き
い場合には共振周波数の温度係数τf が大きくなるの
で、その含有量cは0≦c≦2、好ましくは0.1≦c
≦2である。
In the present invention, N is used as the third component.
b2OFive, MnO, Al2O3And ZnO
The inclusion of at least one kind causes the temperature dependence of the resonance frequency.
Number τ fThe absolute value of can be further reduced. Main character
The content c (% by weight) of the third component is too large.
Temperature coefficient τ of resonance frequencyfWill grow
And the content c is 0 ≦ c ≦ 2, preferably 0.1 ≦ c
≦ 2.

【0011】本発明の誘電体磁器組成物の好適な製造法
の一例を次に説明する。炭酸バリウム、酸化チタン、酸
化ネオジム、酸化サマリウムおよび酸化ビスマスの出発
原料を各所定量ずつ水、アルコ−ル等の溶媒と共に湿式
混合する。続いて、水、アルコ−ル等を除去した後、粉
砕し、酸素含有ガス雰囲気(例えば空気雰囲気)下に1
000〜1200℃で約1〜5時間程度仮焼する。この
ようにして得られた仮焼粉と副成分PbO、ZnOおよ
びB2 3 から構成されるガラス粉末、副成分CuO、
ならびに第三成分としてNb2 5 、MnO、Al2
3およびZnOのうち少なくとも一種類以上とを、アル
コ−ル等の溶媒と共に湿式混合する。続いて、水、アル
コ−ル等を除去した後、粉砕する。更に、ポリビニルア
ルコ−ルの如き有機バインダと共に混合して均質にし、
乾燥、粉砕、加圧成型(圧力100〜1000Kg/c
2 程度)する。得られた成形物を空気の如き酸素含有
ガス雰囲気下に850℃〜1100℃で焼成することに
より上記組成式で表される誘電体磁器組成物が得られ
る。
An example of a suitable method for producing the dielectric ceramic composition of the present invention will be described below. Starting materials of barium carbonate, titanium oxide, neodymium oxide, samarium oxide, and bismuth oxide are wet-mixed in predetermined amounts with a solvent such as water or alcohol. Then, after removing water, alcohol, etc., the product is pulverized and placed under an oxygen-containing gas atmosphere (for example, an air atmosphere) to obtain 1
Calcination is performed at 000 to 1200 ° C for about 1 to 5 hours. A glass powder composed of the calcined powder thus obtained and the subcomponents PbO, ZnO and B 2 O 3 , the subcomponent CuO,
And Nb 2 O 5 , MnO, Al 2 O as the third component
At least one or more of 3 and ZnO is wet-mixed with a solvent such as alcohol. Then, after removing water, alcohol, etc., it is pulverized. Further, it is mixed with an organic binder such as polyvinyl alcohol to make it homogeneous,
Drying, crushing, pressure molding (pressure 100-1000Kg / c
m 2 ). The dielectric ceramic composition represented by the above composition formula is obtained by firing the obtained molded product in an oxygen-containing gas atmosphere such as air at 850 ° C to 1100 ° C.

【0012】このようにして得られた誘電体磁器組成物
は、必要により適当な形状およびサイズに加工、あるい
はドクタ−ブレ−ド法等によるシ−ト成形およびシ−ト
と電極による積層化により、誘電体共振器、誘電体基
板、積層素子等の材料として利用できる。
The dielectric porcelain composition thus obtained is processed into a suitable shape and size as required, or by sheet molding by a doctor blade method or the like and lamination by a sheet and an electrode. It can be used as a material for a dielectric resonator, a dielectric substrate, a laminated element and the like.

【0013】なお、バリウム、チタン、ネオジム、サマ
リウム、ビスマス、鉛、亜鉛、ホウ素、銅、ニオブ、マ
ンガン、アルミニウムの原料としては、BaCO3 、T
iO 2 、Nd2 3 、Sm2 3 、Bi2 3 、Pb
O、ZnO、B2 3 、CuO、Nb2 5 、MnO、
Al2 3 の他に、焼成時に酸化物となる硝酸塩、水酸
化物等を使用することができる。
Barium, titanium, neodymium, summer
Lithium, Bismuth, Lead, Zinc, Boron, Copper, Niobium, Ma
BaCO is used as the raw material for gangan and aluminum.3, T
iO 2, Nd2O3, Sm2O3, Bi2O3, Pb
O, ZnO, B2O3, CuO, Nb2OFive, MnO,
Al2O3In addition to nitrates and hydroxides that become oxides during firing
Compounds and the like can be used.

【0014】[0014]

【実施例】以下に実施例および比較例を示し、本発明を
さらに具体的に説明する。 実施例1 炭酸バリウム粉末(BaCO3 )0.15モル、酸化チ
タン粉末(TiO2 )0.675モル、酸化ネオジム紛
末(Nd2 3 )0.13モル、酸化サマリウム紛末
(Sm2 3 )0.02モル、酸化ビスマス紛末(Bi
2 3 )0.025モルをエタノ−ルと共にボ−ルミル
に入れ、12時間湿式混合した。溶液を脱媒後、粉砕
し、空気雰囲気下1100℃で仮焼した。また、酸化鉛
(PbO)84wt%、酸化ホウ素(B2 3 )9wt
%および酸化亜鉛(ZnO)7wt%から構成されるガ
ラス粉末Aを常法により調製した。上記で得られた仮焼
物にこのPbO、ZnOおよびB2 3 から構成される
ガラス粉末A3wt%ならびに酸化銅粉末(CuO)1
wt%を添加しエタノ−ルと共にボ−ルミルに入れ、1
2時間湿式混合した。溶液を脱媒後、粉砕し、この粉砕
物に適量のポリビニルアルコ−ル溶液を加えて乾燥後、
直径12mmφ、厚み4mmtのペレットに成形し、空
気雰囲気下において1150℃で2時間焼成した。
EXAMPLES The present invention will be described more specifically by showing Examples and Comparative Examples below. Example 1 Barium carbonate powder (BaCO 3 ) 0.15 mol, titanium oxide powder (TiO 2 ) 0.675 mol, neodymium oxide powder (Nd 2 O 3 ) 0.13 mol, samarium oxide powder (Sm 2 O) 3 ) 0.02 mol, bismuth oxide powder (Bi
0.025 mol of 2 O 3 ) was put in a ball mill together with ethanol and wet-mixed for 12 hours. The solution was desolvated, pulverized, and calcined at 1100 ° C. in an air atmosphere. In addition, lead oxide (PbO) 84 wt%, boron oxide (B 2 O 3 ) 9 wt
% And zinc oxide (ZnO) 7 wt%, a glass powder A was prepared by a conventional method. The calcined product obtained above had glass powder A3 wt% composed of PbO, ZnO and B 2 O 3 and copper oxide powder (CuO) 1.
Add wt% and put in a ball mill with ethanol, 1
Wet mixed for 2 hours. After desolvating the solution, it is pulverized, and an appropriate amount of polyvinyl alcohol solution is added to the pulverized product and dried,
The pellet was molded into a pellet having a diameter of 12 mmφ and a thickness of 4 mmt and fired at 1150 ° C. for 2 hours in an air atmosphere.

【0015】こうして得られた磁器組成物を直径7mm
φ、厚み約3mmtの大きさに加工したのち、誘電共振
法によって測定し、共振周波数(3〜5GHz)におけ
る無負荷Q、比誘電率および共振周波数の温度係数を求
めた。その結果を表2に示す。
The porcelain composition thus obtained has a diameter of 7 mm.
After processing into a size of φ and a thickness of about 3 mmt, measurement was performed by the dielectric resonance method, and the unloaded Q at the resonance frequency (3 to 5 GHz), the relative permittivity, and the temperature coefficient of the resonance frequency were obtained. The results are shown in Table 2.

【0016】実施例2〜14および比較例1〜19 実施例1の炭酸バリウム、酸化チタン、酸化ネオジム、
酸化サマリウムおよび酸化ビスマスの混合割合と、副成
分であるPbO、ZnOおよびB2 3 から構成される
ガラス粉末の種類(ガラス粉末B:PbO85wt%,
ZnO8wt%,B2 3 7wt%)とその添加量、副
成分CuOの添加量ならびに第三成分の添加量とを表1
記載にように代えた他は、実施例1と同様にして誘電体
磁器組成物を製造し、特性を測定した。その結果を表2
に示す。
Examples 2 to 14 and Comparative Examples 1 to 19 Barium carbonate, titanium oxide, neodymium oxide of Example 1
The mixing ratio of samarium oxide and bismuth oxide and the kind of glass powder composed of PbO, ZnO and B 2 O 3 which are the accessory components (glass powder B: PbO 85 wt%,
ZnO 8 wt%, B 2 O 3 7 wt%) and its addition amount, the addition amount of the auxiliary component CuO and the addition amount of the third component are shown in Table 1.
A dielectric porcelain composition was produced in the same manner as in Example 1 except that the description was changed, and the characteristics were measured. The results are shown in Table 2.
Shown in

【0017】[0017]

【表1】 [Table 1]

【0018】[0018]

【表2】 [Table 2]

【0019】[0019]

【発明の効果】本発明によれば、比誘電率εr が大き
く、かつ無負荷Q値も大きく、しかも共振周波数の温度
係数τf の小さい誘電体磁器組成物を提供することがで
きる。また、低温焼結が可能であり、Ag、Ag−P
d、Cu等を内部電極とした積層化が可能な誘電体磁器
組成物を提供することができる。
According to the present invention, it is possible to provide a dielectric ceramic composition having a large relative permittivity ε r , a large unloaded Q value, and a small temperature coefficient τ f of the resonance frequency. In addition, low temperature sintering is possible, and Ag, Ag-P
It is possible to provide a dielectric porcelain composition which can be laminated by using d, Cu or the like as an internal electrode.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 主成分が組成式、xBaO−yTiO
2 −zNd2 3 −tSm2 3 −wBi2 3 (式
中、0.1≦x≦0.2、0.5≦y≦0.8、0.0
1≦z≦0.2、0.01≦t≦0.2、0.005≦
w≦0.05、x+y+z+t+w=1である。)で表
されるバリウム、チタン、ネオジム、サマリウム、ビス
マスおよび酸素からなる誘電体磁器組成物であり、かつ
副成分としてPbO、ZnOおよびB2 3 から構成さ
れるガラス粉末ならびにCuOを含有し、主成分に対す
る副成分ガラス粉末の含有量a(重量%)が1≦a≦2
5、CuOの含有量b(重量%)が0.5≦b≦5であ
ることを特徴とする誘電体磁器組成物。
1. The main component is a composition formula, xBaO-yTiO.
2 -zNd 2 O 3 -tSm 2 O 3 -wBi 2 O 3 ( where, 0.1 ≦ x ≦ 0.2,0.5 ≦ y ≦ 0.8,0.0
1 ≦ z ≦ 0.2, 0.01 ≦ t ≦ 0.2, 0.005 ≦
w ≦ 0.05 and x + y + z + t + w = 1. ) Is a dielectric porcelain composition consisting of barium, titanium, neodymium, samarium, bismuth and oxygen, and contains glass powder and CuO composed of PbO, ZnO and B 2 O 3 as accessory components, The content a (% by weight) of the glass powder as a subcomponent with respect to the main component is 1 ≦ a ≦ 2.
5. The dielectric ceramic composition, wherein the CuO content b (% by weight) is 0.5 ≦ b ≦ 5.
JP6190797A 1994-08-12 1994-08-12 Dielectric ceramic composition Pending JPH0855519A (en)

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JP6190797A JPH0855519A (en) 1994-08-12 1994-08-12 Dielectric ceramic composition

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JPH0855519A true JPH0855519A (en) 1996-02-27

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340649B1 (en) 1999-03-16 2002-01-22 Tdk Corporation Composition of dielectric ceramics and producing method thereof
KR100444225B1 (en) * 2001-05-01 2004-08-16 삼성전기주식회사 Dielectric ceramic composition, ceramic capacitor using the same and process of producing thereof
KR100444224B1 (en) * 2001-11-13 2004-08-16 삼성전기주식회사 Dielectric Ceramic Compositions
JP2014122144A (en) * 2012-12-21 2014-07-03 Fdk Corp Dielectric ceramic composition, dielectric ceramic composition production method, multilayer chip component, multilayer chip component production method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340649B1 (en) 1999-03-16 2002-01-22 Tdk Corporation Composition of dielectric ceramics and producing method thereof
KR100444225B1 (en) * 2001-05-01 2004-08-16 삼성전기주식회사 Dielectric ceramic composition, ceramic capacitor using the same and process of producing thereof
KR100444224B1 (en) * 2001-11-13 2004-08-16 삼성전기주식회사 Dielectric Ceramic Compositions
JP2014122144A (en) * 2012-12-21 2014-07-03 Fdk Corp Dielectric ceramic composition, dielectric ceramic composition production method, multilayer chip component, multilayer chip component production method

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