JP3235343B2 - Dielectric porcelain composition - Google Patents

Dielectric porcelain composition

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Publication number
JP3235343B2
JP3235343B2 JP10984094A JP10984094A JP3235343B2 JP 3235343 B2 JP3235343 B2 JP 3235343B2 JP 10984094 A JP10984094 A JP 10984094A JP 10984094 A JP10984094 A JP 10984094A JP 3235343 B2 JP3235343 B2 JP 3235343B2
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JP
Japan
Prior art keywords
subcomponent
dielectric
composition
porcelain
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10984094A
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Japanese (ja)
Other versions
JPH07315920A (en
Inventor
咲子 岩本
将充 柴田
幸生 浜地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
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Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP10984094A priority Critical patent/JP3235343B2/en
Priority to EP95107746A priority patent/EP0684214B1/en
Priority to DE69501754T priority patent/DE69501754T2/en
Priority to US08/447,234 priority patent/US5612268A/en
Priority to KR1019950013039A priority patent/KR0161099B1/en
Publication of JPH07315920A publication Critical patent/JPH07315920A/en
Application granted granted Critical
Publication of JP3235343B2 publication Critical patent/JP3235343B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は誘電体磁器組成物に関
し、特に磁器積層コンデンサなどの材料として用いられ
る誘電体磁器組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric porcelain composition, and more particularly to a dielectric porcelain composition used as a material for a laminated ceramic capacitor.

【0002】[0002]

【従来の技術】従来より、電圧依存性が小さく、磁器の
強度が高く、平坦な誘電率温度特性をもつ誘電体磁器組
成物として、BaTiO3 を主成分とし、これにビスマ
ス化合物と希土類元素とを副成分として添加した磁器組
成物が広く知られている。
2. Description of the Related Art Conventionally, a dielectric porcelain composition having a small voltage dependency, a high strength of porcelain and a flat dielectric constant-temperature characteristic has a main component of BaTiO 3 , which contains a bismuth compound and a rare earth element. A porcelain composition to which is added as an auxiliary component is widely known.

【0003】一方、上記組成の誘電体磁器組成物とは別
に、BaTiO3 を主成分とし、これにNb2 5 、希
土類酸化物、およびCr、Mn、Fe、Co、Niなど
の遷移金属酸化物を副成分として添加した誘電体磁器組
成物においても、誘電率が3000以上の高誘電率であ
りながら、平坦な誘電率温度特性が得られることが報告
されている。
On the other hand, separately from the dielectric ceramic composition having the above composition, BaTiO 3 is mainly used, and Nb 2 O 5 , a rare earth oxide and a transition metal oxide such as Cr, Mn, Fe, Co and Ni are used. It has been reported that a dielectric ceramic composition to which a substance is added as an auxiliary component can also obtain a flat dielectric temperature characteristic while having a high dielectric constant of 3000 or more.

【0004】これらの誘電体磁器組成物の温度特性は、
EIA規格のX7R特性、すなわち−55℃〜+125
℃の温度域で、+25℃における静電容量を基準とした
ときの容量変化率が±15%以内であることを満足する
ものであった。
The temperature characteristics of these dielectric ceramic compositions are as follows:
X7R characteristics of EIA standard, that is, -55 ° C to +125
In the temperature range of ° C., the capacitance change rate based on the capacitance at + 25 ° C. was within ± 15%.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、BaT
iO3 を主成分とし、これにビスマス化合物を添加した
誘電体磁器組成物は、誘電率が1000程度と低かっ
た。また、誘電率を高くすると静電容量の温度変化率が
大きくなる。加えて、高温で焼成すると、焼成時にBi
2 3 が蒸発して、磁器に歪みが生じたり、組成割合が
変化して必要な電気特性や機械的強度が得られなかった
り、ばらつきが生じたりという問題があった。
However, BaT
The dielectric ceramic composition containing iO 3 as a main component and a bismuth compound added thereto had a low dielectric constant of about 1,000. In addition, when the dielectric constant is increased, the temperature change rate of the capacitance is increased. In addition, when firing at high temperature, Bi at the time of firing
There are problems that 2 O 3 evaporates and distortion occurs in the porcelain, the composition ratio changes, and the required electric characteristics and mechanical strength cannot be obtained, or variations occur.

【0006】一方、BaTiO3 を主成分とし、これに
Nb2 5 、希土類酸化物およびCr、Mn、Fe、C
o、Niなどの遷移金属酸化物を副成分として添加した
誘電体磁器組成物は、3000以上の誘電率を有し、平
坦な温度特性を有する。しかし、この誘電体磁器組成物
は焼成温度が1200℃以上と高かった。
On the other hand, BaTiO 3 is used as a main component, and Nb 2 O 5 , a rare earth oxide and Cr, Mn, Fe, C
A dielectric porcelain composition to which a transition metal oxide such as o or Ni is added as a subcomponent has a dielectric constant of 3000 or more and has flat temperature characteristics. However, the firing temperature of this dielectric porcelain composition was as high as 1200 ° C. or higher.

【0007】また、最近の磁器コンデンサは小型化の傾
向にあり、特に磁器積層コンデンサでは、小型化かつ大
容量化のために、磁器誘電体層の厚みが5μm〜15μ
mと薄膜化される傾向にある。そのため、誘電体磁器組
成物には、電圧依存性が小さいことが望まれている。
Further, recent ceramic capacitors tend to be miniaturized. In particular, in a multilayer ceramic capacitor, the thickness of the ceramic dielectric layer is 5 μm to 15 μm in order to reduce the size and increase the capacity.
m. Therefore, it is desired that the dielectric ceramic composition has low voltage dependency.

【0008】しかし、上記の大きな誘電率を有する誘電
体磁器組成物は、電圧依存性が大きいため、最近の薄膜
化に対応できず、小型大容量の磁器積層コンデンサを作
製することができなかった。また、磁器の強度も低いた
め、実装時に磁器が破壊することもあった。
However, the above-mentioned dielectric ceramic composition having a large dielectric constant has a large voltage dependency, so that it cannot cope with recent thinning, and a small-sized large-capacity ceramic multilayer capacitor cannot be produced. . In addition, the strength of the porcelain is low, so that the porcelain may be broken during mounting.

【0009】そこで、本発明の目的は、1160℃以下
で焼成でき、誘電率が1000以上の高誘電率でありな
がら、+25℃における静電容量を基準としたとき、−
55℃〜+125℃の広い範囲にわたって、静電容量の
温度変化率が±15%以内と平坦であり、また、磁器の
機械的強度が高く、さらに誘電体磁器層の厚みを5μm
〜15μmと薄膜化した場合においても比較的高い定格
電圧でJIS C6429のRB特性の規格に準じて、
定格電圧の50%の直流電圧を印加したときの静電容量
の温度変化率が小さい、誘電体磁器組成物を提供するこ
とにある。
Therefore, an object of the present invention is to sinter at a temperature of 1160 ° C. or less, and to obtain a high dielectric constant of 1000 or more, while taking into account the capacitance at + 25 ° C.
The temperature change rate of the capacitance is flat within ± 15% over a wide range from 55 ° C. to + 125 ° C., the mechanical strength of the porcelain is high, and the thickness of the dielectric porcelain layer is 5 μm.
Even when the thickness is reduced to 15 μm, at a relatively high rated voltage, in accordance with the RB characteristic standard of JIS C6429,
It is an object of the present invention to provide a dielectric ceramic composition having a small capacitance temperature change rate when a DC voltage of 50% of a rated voltage is applied.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するた
め、本発明の誘電体磁器組成物は、一般式{100−
(a+b+c+d)}BaTiO3 +aZnO+b(2
Bi2 3 ・3ZrO2 )+cTa2 5 +dRe2
3 (ただし、ReはLa、Pr、Nd、Sm、Dy、E
rの中から選ばれる少なくとも1種類、a、b、cおよ
びdはモル%)で表される主成分が97.5〜99.9
5重量%、ただし、前記一般式のa、b、cおよびdが
それぞれ次の範囲にある 0.5≦a≦4.5 0.5≦b≦4.5 0.5≦c≦4.5 0.5≦d≦5.5 SiO2 を主成分とするガラスからなる第1副成分が
0.05〜2.5重量%、からなる。
In order to achieve the above object, the dielectric porcelain composition of the present invention has the general formula:
(A + b + c + d)} BaTiO 3 + aZnO + b (2
Bi 2 O 3 .3ZrO 2 ) + cTa 2 O 5 + dRe 2 O
3 (However, Re is La, Pr, Nd, Sm, Dy, E
at least one selected from r, and a, b, c and d are mol%) in a proportion of 97.5 to 99.9.
5% by weight, provided that a, b, c and d in the above general formula are in the following ranges: 0.5 ≦ a ≦ 4.5 0.5 ≦ b ≦ 4.5 0.5 ≦ c ≦ 4. 5 0.5 ≦ d ≦ 5.5 first subcomponent of SiO 2 made of glass whose main component is 0.05 to 2.5 wt%, consisting of.

【0011】また、本発明の誘電体磁器組成物は、一般
式{100−(a+b+c+d)}BaTiO3 +aZ
nO+b(2Bi2 3 ・3ZrO2 )+cTa2 5
+dRe2 3 (ただし、ReはLa、Pr、Nd、S
m、Dy、Erの中から選ばれる少なくとも1種類、
a、b、cおよびdはモル%)で表される主成分が9
7.0〜99.94重量%、ただし、前記一般式のa、
b、cおよびdがそれぞれ次の範囲にある 0.5≦a≦4.5 0.5≦b≦4.5 0.5≦c≦4.5 0.5≦d≦5.5 SiO2 を主成分とするガラスからなる第1副成分が
0.05〜2.5重量%、Cr、Mn、Fe、Coおよ
びNiの酸化物の中から選ばれる少なくとも1種類から
なる第2副成分が0.01〜0.5重量%、からなる。
The dielectric porcelain composition of the present invention has a general formula {100- (a + b + c + d)} BaTiO 3 + aZ
nO + b (2Bi 2 O 3 .3ZrO 2 ) + cTa 2 O 5
+ DRe 2 O 3 (where Re is La, Pr, Nd, S
at least one selected from m, Dy, and Er;
a, b, c and d are mol%) and the main component is 9
7.0 to 99.94% by weight, provided that a,
b, c and d are respectively in the following ranges: 0.5 ≦ a ≦ 4.5 0.5 ≦ b ≦ 4.5 0.5 ≦ c ≦ 4.5 0.5 ≦ d ≦ 5.5 SiO 2 0.05 to 2.5% by weight of a first sub-component composed of glass whose main component is a second sub-component composed of at least one selected from oxides of Cr, Mn, Fe, Co and Ni. 0.01 to 0.5% by weight.

【0012】[0012]

【発明の効果】この発明にかかる誘電体磁器組成物は、
1160℃以下の低温で焼成でき、直流電圧を印加した
ときの静電容量の温度変化率(バイアスTC)が小さ
い。そのため、誘電体磁器の厚みを5μm〜15μmと
薄膜化することができる。その結果、磁器積層コンデン
サの小型かつ大容量化を進めることができる。
Industrial Applicability The dielectric porcelain composition according to the present invention comprises:
It can be fired at a low temperature of 1160 ° C. or less, and has a small capacitance temperature change rate (bias TC) when a DC voltage is applied. Therefore, the thickness of the dielectric ceramic can be reduced to 5 μm to 15 μm. As a result, the porcelain multilayer capacitor can be reduced in size and capacity.

【0013】また、磁器の機械的強度が高いため、磁器
積層コンデンサとして用いる場合に、基板実装時におけ
る割れ、欠けなどの破壊が起こらない。そのため、ショ
ート不良や発熱による焼損などの事故を防ぐことができ
る。
Further, since the porcelain has a high mechanical strength, when it is used as a porcelain multilayer capacitor, breakage such as cracking, chipping or the like does not occur when mounted on a substrate. Therefore, accidents such as short-circuit failure and burning due to heat generation can be prevented.

【0014】さらに、1000以上の高誘電率でありな
がら、+25℃における静電容量を基準としたとき、−
55℃〜+125℃の広い温度範囲にわたって、静電容
量の温度変化率が±15%以内と平坦であり、温度的に
も安定している。以上のことから産電市場向けまたは民
生市場向けの誘電体磁器として、広い範囲にわたって用
いることができる。
Further, when the capacitance at + 25 ° C. is referenced while having a high dielectric constant of 1000 or more, −
Over a wide temperature range from 55 ° C. to + 125 ° C., the temperature change rate of the capacitance is flat with ± 15% or less, and the temperature is stable. From the above, it can be used over a wide range as a dielectric porcelain for the industrial market or the consumer market.

【0015】[0015]

【実施例】以下、本発明の誘電体磁器組成物について、
その実施例を説明する。
EXAMPLES The dielectric ceramic composition of the present invention is described below.
The embodiment will be described.

【0016】初めに、誘電体磁器組成物の主成分の調整
方法について述べる。出発原料として、工業用原料であ
るBaTiO3 、ZnO、Bi2 3 、ZrO2 、Ta
2 5 、Re2 3 (但し、ReはLa、Pr、Nd、
Sm、Dy、Er)を準備した。これら出発原料を、表
1に示す磁器組成物が得られるように秤量し、ボールミ
ルで16時間湿式混合粉砕した後、蒸発乾燥して混合粉
末を得た。得られた混合粉末をジルコニア質の匣に入れ
て、自然雰囲気中で1000℃、2時間仮焼した後、2
00メッシュの篩を通過するように祖粉砕して、誘電体
磁器組成物の主成分の原料粉末とした。
First, a method for adjusting the main components of the dielectric ceramic composition will be described. As starting materials, BaTiO 3 , ZnO, Bi 2 O 3 , ZrO 2 , Ta
2 O 5 , Re 2 O 3 (where Re is La, Pr, Nd,
Sm, Dy, Er) were prepared. These starting materials were weighed so that the porcelain composition shown in Table 1 was obtained, wet-mixed and crushed with a ball mill for 16 hours, and then dried by evaporation to obtain a mixed powder. The obtained mixed powder was placed in a zirconia box and calcined at 1000 ° C. for 2 hours in a natural atmosphere.
It was ground to pass through a 00 mesh sieve to obtain a raw material powder as a main component of the dielectric ceramic composition.

【0017】次に、誘電体磁器組成物の第1副成分の調
整方法について述べる。本実施例では、焼成温度を11
60℃以下にする第1副成分として、8BaO−6Sr
O−6CaO−30Li2 O−50SiO2 (モル%)
で表される酸化物ガラスを用いた。出発原料として、工
業用原料であるBaCO3 、SrCO3 、CaCO3
2 OおよびSiO2 を準備した。これらの出発原料を
上記組成物が得られるように秤量し、ボールミルで16
時間湿式混合粉砕した後、蒸発乾燥して混合粉末を得
た。得られた混合粉末をアルミナ製の坩堝に入れて13
00℃の温度で1時間放置し、その後急冷してガラス化
した。これを200メッシュの篩を通過するように粉砕
して、誘電体磁器組成物の第1副成分の原料粉末とし
た。
Next, a method for adjusting the first subcomponent of the dielectric ceramic composition will be described. In this embodiment, the firing temperature is set to 11
8BaO-6Sr as a first subcomponent to be 60 ° C or lower
O-6CaO-30Li 2 O- 50SiO 2 ( mol%)
Was used. As starting materials, BaCO 3 , SrCO 3 , CaCO 3 , L
i 2 O and SiO 2 were prepared. These starting materials were weighed so as to obtain the above composition, and were weighed with a ball mill.
After wet mixing and crushing for hours, the mixture was evaporated to dryness to obtain a mixed powder. The obtained mixed powder was put into an alumina crucible,
It was left at a temperature of 00 ° C. for 1 hour, and then rapidly cooled to vitrify. This was pulverized so as to pass through a 200-mesh sieve to obtain a raw material powder as a first subcomponent of the dielectric ceramic composition.

【0018】以上のようにして得られた第1副成分の原
料粉末を、主成分の原料粉末に対して、表1に示す重量
比になるように添加した。
The raw material powder of the first subcomponent obtained as described above was added so as to have a weight ratio shown in Table 1 with respect to the raw material powder of the main component.

【0019】また、第2副成分について工業用原料であ
るCr2 3 、MnO2 、Fe2 3 、Co2 3 、N
iOを準備した。そして、これを主成分組成が93.0
BaTiO3 +1.5ZnO+1.5(2Bi2 3
3ZrO2 )+2.0Ta25 +2.0Nd2
3 (モル%)で、上記の第1副成分を1.0重量%添加
したものに対して、表2に示す磁器組成物が得られるよ
うに添加した。
The second subcomponent is Cr 2 O 3 , MnO 2 , Fe 2 O 3 , Co 2 O 3 , N 2
iO was prepared. Then, the main component composition was 93.0.
BaTiO 3 +1.5 ZnO + 1.5 ( 2 Bi 2 O 3.
3ZrO 2 ) + 2.0Ta 2 O 5 + 2.0Nd 2 O
At 3 (mol%), the above-mentioned first subcomponent was added in an amount of 1.0% by weight so that the porcelain composition shown in Table 2 was obtained.

【0020】これらにポリビニルブチラール系のバイン
ダおよびトルエン、エチルアルコールなどの有機溶剤を
加えて、ボールミルで16時間湿式混合した後、ドクタ
ーブレード法によりシート成形を行なってグリーンシー
トを得た。得られたグリーンシートの厚みは19μmで
あった。このグリーンシートに内部電極パターンをAg
/Pd=70/30(重量%)のペーストを用いて印刷
した後、それらを6層積み重ねてダミーのシートととも
に熱圧着し、その圧着体から長さ5.5mm、幅4.5
mm、厚さ1mmの成形体を切り出した。その後、この
成形体をそれぞれ表3、表4に示す焼成温度で2時間焼
成し、焼成体を得た。焼成後の誘電体厚みは13μmで
あった。
To these were added a polyvinyl butyral-based binder and an organic solvent such as toluene and ethyl alcohol, and the mixture was wet-mixed in a ball mill for 16 hours, and then formed into a sheet by a doctor blade method to obtain a green sheet. The thickness of the obtained green sheet was 19 μm. An internal electrode pattern is formed on this green sheet by Ag.
After printing using a paste of / Pd = 70/30 (% by weight), they are stacked in six layers and thermocompression-bonded together with a dummy sheet.
mm and a 1 mm thick molded body were cut out. Thereafter, this molded body was fired at the firing temperatures shown in Tables 3 and 4 for 2 hours to obtain a fired body. The dielectric thickness after firing was 13 μm.

【0021】そして、得られた焼結体の端面に銀電極を
焼き付けて測定試料(積層コンデンサ)として、その室
温での誘電率(ε)、誘電損失(tanδ)、TCおよ
びバイアスTCを測定した。
Then, a silver electrode was baked on the end face of the obtained sintered body, and a dielectric constant (ε), a dielectric loss (tan δ), a TC and a bias TC at room temperature were measured as a measurement sample (multilayer capacitor). .

【0022】この場合、誘電率(ε)および誘電損失
(tanδ)は、温度25℃、1kHz、1Vrmsの
条件下で測定した。TCは25℃での静電容量を基準と
して、−55℃〜+125℃の間における温度変化率が
最大である値の絶対値、いわゆる最大変化率(|△C/
C|max )を求めた。また、バイアスTCについては、
上記温度範囲で25Vの直流電圧を測定試料に重畳しな
がらその静電容量を測定して、温度25℃、印加電圧0
Vのときの静電容量を基準として最大変化率(△
maxB)を求めた。
In this case, the dielectric constant (ε) and the dielectric loss (tan δ) were measured at a temperature of 25 ° C., 1 kHz, and 1 Vrms. TC is the absolute value of the value at which the rate of temperature change is maximum between −55 ° C. and + 125 ° C., based on the capacitance at 25 ° C., so-called maximum rate of change (| △ C /
C | max ). As for the bias TC,
The capacitance was measured while a DC voltage of 25 V was superimposed on the measurement sample in the above temperature range.
The maximum rate of change (△
C maxB ) was determined.

【0023】さらに、磁器の抗折強度を3点曲げにより
測定した。即ち、まず表1および表2に示したそれぞれ
の組成の原料を長さ35mm、幅7mm、厚さ1.2m
mにプレス成形して成形体を得た。その後、それぞれ表
3および表4に示す焼成温度で2時間焼成し、短冊状の
磁器を得た。その後、それぞれの組成で20本の試料に
ついて抗折強度を測定し、その平均をもって各組成の抗
折強度とした。
Further, the bending strength of the porcelain was measured by three-point bending. That is, first, the raw materials having the respective compositions shown in Tables 1 and 2 were prepared by 35 mm in length, 7 mm in width, and 1.2 m in thickness.
m to obtain a molded body. After that, it was fired at the firing temperatures shown in Tables 3 and 4 for 2 hours to obtain strip-shaped porcelain. Thereafter, the flexural strength was measured for 20 samples of each composition, and the average was taken as the flexural strength of each composition.

【0024】以上の各試験について、表1の組成物にお
ける結果を表3に、表2の組成物における結果を表4に
それぞれ示す。
For each of the above tests, the results for the compositions in Table 1 are shown in Table 3, and the results for the compositions in Table 2 are shown in Table 4.

【0025】この発明において、主成分量、第1副成分
量および第2副成分量の範囲を限定した理由を説明す
る。
In the present invention, the reason why the ranges of the main component amount, the first subcomponent amount, and the second subcomponent amount are limited will be described.

【0026】まず、主成分組成の範囲を限定した理由に
ついて説明する。表1の試料番号9に示すように、aの
値すなわちZnOが0.5モル%未満になると、TCが
15%を超える変化となり、また抗折強度も1500k
g/cm2 以下の低い値になってしまい好ましくない。
一方、試料番号10に示すように、aの値が4.5モル
%を超えると、バイアスTCが−40%を超える変化と
なり、またTCも15%を超えるため好ましくない。
First, the reason for limiting the range of the main component composition will be described. As shown in Sample No. 9 in Table 1, when the value of a, that is, ZnO is less than 0.5 mol%, the TC changes by more than 15%, and the bending strength is also 1500 k.
g / cm 2 or less, which is not preferable.
On the other hand, as shown in Sample No. 10, when the value of a exceeds 4.5 mol%, the bias TC changes more than −40%, and the TC also exceeds 15%, which is not preferable.

【0027】表1の試料番号11に示すように、bの値
すなわち2Bi2 3 ・3ZrO2が0.5モル%未満
になるとTCが15%を超える変化となり、また抗折強
度も1500kg/cm2 以下の低い値になって好まし
くない。一方、試料番号12に示すように、bの値が
4.5モル%を超えると、εが1000未満になって好
ましくない。
As shown in Sample No. 11 in Table 1, when the value of b, ie, 2Bi 2 O 3 .3ZrO 2, is less than 0.5 mol%, the TC changes by more than 15%, and the bending strength also becomes 1500 kg / The value is undesirably a low value of not more than cm 2 . On the other hand, as shown in Sample No. 12, when the value of b exceeds 4.5 mol%, ε becomes less than 1000, which is not preferable.

【0028】表1の試料番号13に示すように、cの値
すなわちTa2 5 が0.5モル%未満になるか、ある
いは試料番号14に示すようにcの値が4.5モル%を
超えると、TCが15%を超えるため好ましくない。
As shown in Sample No. 13 in Table 1, the value of c, that is, Ta 2 O 5 is less than 0.5 mol%, or as shown in Sample No. 14, the value of c is 4.5 mol%. Is not preferable because TC exceeds 15%.

【0029】表1の試料番号15に示すように、dの値
すなわちRe2 3 が0.5モル%未満になるか、ある
いは試料番号16に示すように、dの値が5.5モル%
を超えると、TCが15%を超える変化となり、また、
バイアスTCも−40%を超える変化となり好ましくな
い。
As shown in Sample No. 15 in Table 1, the value of d, ie, Re 2 O 3, was less than 0.5 mol%, or as shown in Sample No. 16, the value of d was 5.5 mol%. %
Exceeds TC, the TC changes by more than 15%.
The bias TC also changes more than -40%, which is not preferable.

【0030】次に、第1副成分の範囲を限定した理由に
ついて説明する。表1の試料番号17に示すように、第
1副成分の添加量が0.05重量%未満になると、焼成
温度が1160℃を超えるため好ましくない。一方、試
料番号20に示すように第1副成分の添加量が2.5重
量%を超えると、εが1000未満となり好ましくな
い。
Next, the reason for limiting the range of the first subcomponent will be described. As shown in Sample No. 17 in Table 1, if the amount of the first subcomponent is less than 0.05% by weight, the firing temperature exceeds 1160 ° C., which is not preferable. On the other hand, as shown in Sample No. 20, when the addition amount of the first subcomponent exceeds 2.5% by weight, ε is less than 1,000, which is not preferable.

【0031】次に、第2副成分を限定した理由について
説明する。表2の試料番号30に示すように、第2副成
分の添加量が0.5重量%を超えると、tanδが2.
5%を超える大きな値となるため好ましくない。
Next, the reason for limiting the second subcomponent will be described. As shown in Sample No. 30 in Table 2, when the added amount of the second subcomponent exceeds 0.5% by weight, tan δ becomes 2.%.
It is not preferable because it becomes a large value exceeding 5%.

【0032】なお、上記実施例においては、副成分とし
てBaO−SrO−CaO−Li2O−SiO2 系の酸
化物ガラスを用いたが、焼成温度を1160℃以下にす
る焼結助剤としてはこれに限るものではなく、たとえば
BaO−Li2 O−B2 3 -SiO2 系などの硼素を含
む酸化物ガラスを用いてもよく、SiO2 −B4 Cなど
非酸化物を含む系であってもよい。
In the above embodiment, BaO—SrO—CaO—Li 2 O—SiO 2 -based oxide glass was used as an auxiliary component. However, as a sintering aid for lowering the firing temperature to 1160 ° C. or less, is not limited to this, for example, BaO-Li 2 O-B 2 O 3 - may be an oxide glass containing boron such as SiO 2 system, a system containing SiO 2 -B 4 C such non-oxide There may be.

【0033】また、上記実施例においては、あらかじめ
所定の組成比に調合し、高温に熱処理して熔融した後に
粉砕してガラス化した第1副成分を、磁器組成物の主成
分に添加配合した。しかし、主成分および第1副成分の
添加方法としては、この他、あらかじめ所定の割合に調
合して溶融しない程度に加熱し、出発原料を改質したも
の、例えばBi4 Zr3 12のような固溶体を添加する
か、あるいは第1副成分の各構成元素を、例えば金属ア
ルコキシドといった任意の化合物状態で主成分に対して
個々に添加してもよい。
In the above embodiment, the first subcomponent prepared in advance at a predetermined composition ratio, heat-treated at a high temperature, melted, pulverized and vitrified was added to the main component of the porcelain composition. . However, as a method for adding the main component and the first subcomponent, a method in which a starting material is reformed by heating it to such an extent that it is not melted by mixing it in a predetermined ratio in advance, such as Bi 4 Zr 3 O 12 , Alternatively, a solid solution may be added, or each constituent element of the first subcomponent may be individually added to the main component in an arbitrary compound state such as a metal alkoxide.

【0034】また、第2副成分においても、上記実施例
では最初から酸化物の形で添加したが、原料作製時の出
発原料としては、各元素の炭酸物など、仮焼、焼成の段
階で酸化物になるものを用いることができる。
In the above embodiment, the second subcomponent was also added in the form of an oxide from the beginning. However, as a starting material at the time of preparing the raw material, carbonate such as each element was used in the stage of calcination and firing. An oxide can be used.

【0035】[0035]

【表1】 [Table 1]

【0036】[0036]

【表2】 [Table 2]

【0037】[0037]

【表3】 [Table 3]

【0038】[0038]

【表4】 [Table 4]

フロントページの続き (56)参考文献 特開 平7−315921(JP,A) 特開 昭52−92400(JP,A) 特開 平7−73734(JP,A) 特開 平7−37428(JP,A) 特開 平7−37427(JP,A) 特開 平7−37426(JP,A) 特開 平5−178660(JP,A) (58)調査した分野(Int.Cl.7,DB名) C04B 35/42 - 35/50 CA(STN) REGISTRY(STN)Continuation of the front page (56) References JP-A-7-315921 (JP, A) JP-A-52-92400 (JP, A) JP-A-7-73734 (JP, A) JP-A-7-37428 (JP) JP-A-7-37427 (JP, A) JP-A-7-37426 (JP, A) JP-A-5-178660 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB Name) C04B 35/42-35/50 CA (STN) REGISTRY (STN)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 次の一般式、 {100−(a+b+c+d)}BaTiO3 +aZn
O+b(2Bi2 3・3ZrO2 )+cTa2 5
dRe2 3 (ただし、ReはLa、Pr、Nd、Sm、Dy、Er
の中から選ばれる少なくとも1種類、a、b、cおよび
dはモル%)で表される主成分が97.5〜99.95
重量%、 ただし、前記一般式のa、b、cおよびdがそれぞれ次
の範囲にある 0.5≦a≦4.5 0.5≦b≦4.5 0.5≦c≦4.5 0.5≦d≦5.5 SiO2 を主成分とするガラスからなる第1副成分が
0.05〜2.5重量%、からなる誘電体磁器組成物。
1. The following general formula: {100− (a + b + c + d)} BaTiO 3 + aZn
O + b (2Bi 2 O 3 .3ZrO 2 ) + cTa 2 O 5 +
dRe 2 O 3 (where Re is La, Pr, Nd, Sm, Dy, Er
Wherein at least one member selected from the group consisting of a, b, c and d is mol%) is 97.5 to 99.95.
%, Wherein a, b, c and d in the above general formulas are respectively in the following ranges: 0.5 ≦ a ≦ 4.5 0.5 ≦ b ≦ 4.5 0.5 ≦ c ≦ 4.5 0.5 ≦ d ≦ 5.5 A dielectric ceramic composition comprising 0.05 to 2.5% by weight of a first subcomponent made of glass containing SiO 2 as a main component.
【請求項2】 次の一般式、 {100−(a+b+c+d)}BaTiO3 +aZn
O+b(2Bi2 3・3ZrO2 )+cTa2 5
dRe2 3 (ただし、ReはLa、Pr、Nd、Sm、Dy、Er
の中から選ばれる少なくとも1種類、a、b、cおよび
dはモル%)で表される主成分が97.0〜99.94
重量%、 ただし、前記一般式のa、b、cおよびdがそれぞれ次
の範囲にある 0.5≦a≦4.5 0.5≦b≦4.5 0.5≦c≦4.5 0.5≦d≦5.5 SiO2 を主成分とするガラスからなる第1副成分が
0.05〜2.5重量%、Cr、Mn、Fe、Coおよ
びNiの酸化物の中から選ばれる少なくとも1種類から
なる第2副成分が0.01〜0.5重量%、からなる誘
電体磁器組成物。
2. The following general formula: {100− (a + b + c + d)} BaTiO 3 + aZn
O + b (2Bi 2 O 3 .3ZrO 2 ) + cTa 2 O 5 +
dRe 2 O 3 (where Re is La, Pr, Nd, Sm, Dy, Er
Wherein at least one selected from the group consisting of a, b, c and d is mol%) is 97.0 to 99.94.
%, Wherein a, b, c and d in the above general formulas are respectively in the following ranges: 0.5 ≦ a ≦ 4.5 0.5 ≦ b ≦ 4.5 0.5 ≦ c ≦ 4.5 0.5 ≦ d ≦ 5.5 The first subcomponent composed of glass containing SiO 2 as a main component is selected from 0.05 to 2.5% by weight and oxides of Cr, Mn, Fe, Co and Ni. A dielectric ceramic composition comprising 0.01 to 0.5% by weight of at least one second subcomponent.
JP10984094A 1994-05-24 1994-05-24 Dielectric porcelain composition Expired - Fee Related JP3235343B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10984094A JP3235343B2 (en) 1994-05-24 1994-05-24 Dielectric porcelain composition
EP95107746A EP0684214B1 (en) 1994-05-24 1995-05-19 Dielectric ceramic composition
DE69501754T DE69501754T2 (en) 1994-05-24 1995-05-19 Dielectric ceramic composition
US08/447,234 US5612268A (en) 1994-05-24 1995-05-22 Dielectric ceramic composition
KR1019950013039A KR0161099B1 (en) 1994-05-24 1995-05-24 Dielectric ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10984094A JP3235343B2 (en) 1994-05-24 1994-05-24 Dielectric porcelain composition

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Publication Number Publication Date
JPH07315920A JPH07315920A (en) 1995-12-05
JP3235343B2 true JP3235343B2 (en) 2001-12-04

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Publication number Priority date Publication date Assignee Title
KR20190116141A (en) 2019-07-24 2019-10-14 삼성전기주식회사 Dielectric ceramic composition and multilayer ceramic capacitor comprising the same

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