JP3252552B2 - Dielectric porcelain composition - Google Patents

Dielectric porcelain composition

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Publication number
JP3252552B2
JP3252552B2 JP21751993A JP21751993A JP3252552B2 JP 3252552 B2 JP3252552 B2 JP 3252552B2 JP 21751993 A JP21751993 A JP 21751993A JP 21751993 A JP21751993 A JP 21751993A JP 3252552 B2 JP3252552 B2 JP 3252552B2
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JP
Japan
Prior art keywords
mol
composition
weight
dielectric
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP21751993A
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Japanese (ja)
Other versions
JPH0773734A (en
Inventor
将充 柴田
幸生 浜地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
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Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP21751993A priority Critical patent/JP3252552B2/en
Priority to DE69409881T priority patent/DE69409881T2/en
Priority to SG1996006730A priority patent/SG43268A1/en
Priority to EP94111243A priority patent/EP0637041B1/en
Priority to US08/278,620 priority patent/US5432136A/en
Publication of JPH0773734A publication Critical patent/JPH0773734A/en
Application granted granted Critical
Publication of JP3252552B2 publication Critical patent/JP3252552B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】この発明は誘電体磁器組成物に関
し、特に磁器積層コンデンサなどの材料として用いられ
る誘電体磁器組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric porcelain composition, and more particularly to a dielectric porcelain composition used as a material for a laminated ceramic capacitor.

【0002】[0002]

【従来の技術】従来より、電圧依存性が小さく、磁器の
強度が高く、平坦な誘電率温度特性を有する誘電体磁器
組成物としては、たとえば、BaTiO3 を主成分と
し、これにBi2 3 −TiO2 、Bi2 3 −SnO
2 、Bi2 3 −ZrO2 などのビスマス化合物と、希
土類元素を副成分として添加したものが広く知られてい
る。
2. Description of the Related Art Conventionally, as a dielectric ceramic composition having a small voltage dependency, a high strength of a ceramic, and a flat dielectric temperature characteristic, for example, BaTiO 3 as a main component and Bi 2 O 3 -TiO 2, Bi 2 O 3 -SnO
2 , Bismuth compounds such as Bi 2 O 3 —ZrO 2 and those in which a rare earth element is added as an auxiliary component are widely known.

【0003】一方、上記組成の誘電体磁器組成物とは別
に、BaTiO3 を主成分とし、これにNb2 5 ,希
土類酸化物、およびCr、Mn、Fe、Co、Niなど
の遷移金属酸化物を副成分として添加したものも、誘電
率が3000以上の高誘電率でありながら、平坦な誘電
率温度特性が得られることが報告されている。
On the other hand, separately from the dielectric ceramic composition having the above composition, BaTiO 3 is used as a main component, and Nb 2 O 5 , a rare earth oxide, and a transition metal oxide such as Cr, Mn, Fe, Co, and Ni are used. It has been reported that, even when a substance is added as a subcomponent, a flat permittivity-temperature characteristic can be obtained while having a high permittivity of 3000 or more.

【0004】これらの誘電体磁器組成物の温度特性は、
EIA規格のX7R特性、すなわち−55℃〜+125
℃の温度域で、+25℃における静電容量を基準とした
ときの容量変化率が±15%以内であることを満足する
ものであった。
The temperature characteristics of these dielectric ceramic compositions are as follows:
X7R characteristics of EIA standard, that is, -55 ° C to +125
In the temperature range of ° C., the capacitance change rate based on the capacitance at + 25 ° C. was within ± 15%.

【0005】[0005]

【発明が解決しようとする課題】近年、自動車のエンジ
ンルーム内に搭載するEECモジュール(エンジンの電
子制御装置)に、磁器積層コンデンサが用いられるよう
になった。この装置はエンジン制御を安定に行うための
ものなので、回路の温度安定性という面からみて、使用
するコンデンサの温度特性としては、R特性(容量変化
率±15%以内)を満足することが望ましい。
In recent years, a porcelain multilayer capacitor has been used for an EEC module (electronic control unit for an engine) mounted in an engine room of an automobile. Since this device is used to stably control the engine, it is desirable that the temperature characteristics of the capacitor used satisfy the R characteristic (capacity change rate within ± 15%) from the viewpoint of the temperature stability of the circuit. .

【0006】一方、自動車のエンジンルーム内は、寒冷
地の冬期には、−20℃程度まで温度が下がり、また、
エンジンを始動すると、夏期では+130℃程度にまで
温度が上がることが予測される。特に、エンジンのオー
バーヒートなどが起こった場合には、+150℃程度に
まで温度が上がることは十分考えられる。したがって、
従来のX7R特性の誘電体磁器組成物は、エンジンルー
ム内が高温になった場合に対応しきれない。
On the other hand, the temperature in the engine room of a car drops to about -20 ° C. in winter in a cold region.
When the engine is started, it is expected that the temperature will rise to about + 130 ° C. in summer. In particular, when the engine is overheated, it can be considered that the temperature rises to about + 150 ° C. Therefore,
The conventional dielectric ceramic composition having the X7R characteristic cannot cope with the case where the temperature in the engine room becomes high.

【0007】また、この積層コンデンサは自動車搭載用
であるため、基板実装時に破壊すると、EECモジュー
ルを十分機能させることができず、最悪の場合、事故に
つながる恐れがあり、そういうことがあってはならな
い。さらに、自動車の走行中に常に振動や応力が加わる
ことも考えられ、これらの振動や応力によって破壊しな
いためにも、磁器強度は十分高くなければならない。
Further, since this multilayer capacitor is mounted on an automobile, if it is broken during mounting on a substrate, the EEC module cannot function sufficiently, and in the worst case, it may lead to an accident. No. Further, it is conceivable that vibrations and stresses are constantly applied while the automobile is running, and the strength of the porcelain must be sufficiently high so as not to be destroyed by these vibrations and stresses.

【0008】また、誘電体磁器組成物の電圧依存性が大
きいと、誘電体の薄膜化に対応できず、小型大容量の磁
器積層コンデンサを作製することができず、また、回路
の安定性の面から見ても好ましくない。
Further, if the dielectric ceramic composition has a large voltage dependency, it cannot cope with the thinning of the dielectric material, making it impossible to manufacture a small-sized and large-capacity ceramic multilayer capacitor. It is not preferable from the viewpoint.

【0009】ところで、BaTiO3 を主成分とし、こ
れにNb2 5 、希土類酸化物およびCr、Mn、F
e、Co、Niなどの遷移金属酸化物を副成分として添
加した誘電体磁器組成物は、磁器強度が低いため基板実
装時に破壊することがあった。また、これらの大きな誘
電率を有する誘電体磁器組成物は、電圧依存性が大きい
ため、最近の薄層化に対応できず、小型大容量の磁器積
層コンデンサを作製することができなかった。
By the way, BaTiO 3 is used as a main component, and Nb 2 O 5 , a rare earth oxide and Cr, Mn, F
A dielectric porcelain composition to which a transition metal oxide such as e, Co, Ni, or the like is added as a sub-component has a low porcelain strength, and thus may be broken during mounting on a substrate. In addition, these dielectric ceramic compositions having a large dielectric constant have a large voltage dependency, so that they cannot cope with recent thinning, and a small-sized, large-capacity ceramic multilayer capacitor cannot be manufactured.

【0010】一方、BaTiO3 を主成分とし、これに
ビスマス化合物を添加した誘電体磁器組成物は、上述し
たように、電圧依存性が小さく、磁器強度が高いが、誘
電率を高くすると、誘電率の温度変化率が大きくなる。
また、焼成温度を1160℃以上と高くすると、磁器積
層コンデンサとした場合、内部電極に30重量%以上の
Pdを含有させなければならない。そのため、内部電極
中のPdとBi2 3との反応が起こりやすくなる上
に、内部電極にかかるコストも高くなってしまう。
On the other hand, as described above, a dielectric ceramic composition containing BaTiO 3 as a main component and a bismuth compound added thereto has a small voltage dependency and a high ceramic strength. The rate of temperature change of the rate increases.
Further, when the firing temperature is increased to 1160 ° C. or higher, in the case of a porcelain multilayer capacitor, 30% by weight or more of Pd must be contained in the internal electrodes. Therefore, the reaction between Pd and Bi 2 O 3 in the internal electrode is likely to occur, and the cost for the internal electrode increases.

【0011】それゆえに、この発明の主たる目的は、1
160℃以下で焼成でき、1000以上の高誘電率であ
りながら、X8R特性を満足し、すなわち+25℃にお
ける静電容量を基準としたとき、−55℃〜+150℃
の広い温度範囲にわたって静電容量の温度変化率(以
下、「TC」という。)が±15%以内と平坦であり、
また、磁器の機械強度が高く、さらに誘電体磁器層の厚
みを10μm〜15μmと薄膜化したときに、JIS
C6429のRB特性の規格に準じて、定格電圧の50
%の直流電圧を印加したときの静電容量の温度変化率
(以下、「バイアスTC」という。)が+15%〜−4
0%以内と小さい、誘電体磁器組成物を提供することで
ある。
[0011] Therefore, the main object of the present invention is to provide:
It can be fired at 160 ° C. or less, and satisfies the X8R characteristic while having a high dielectric constant of 1000 or more.
The temperature change rate of the capacitance (hereinafter, referred to as “TC”) is flat within ± 15% over a wide temperature range of
When the mechanical strength of the porcelain is high and the thickness of the dielectric porcelain layer is reduced to 10 μm to 15 μm, the JIS
According to the standard of RB characteristic of C6429, the rated voltage of 50
% When the DC voltage is applied (hereinafter referred to as “bias TC”) is + 15% to −4.
An object of the present invention is to provide a dielectric ceramic composition as small as 0% or less.

【0012】[0012]

【課題を解決するための手段】この発明は、一般式、
{100−(a+b+c+d+e+f)}BaTiO3
+aZnO+bBi2 3 +cNb2 5 +dMaO+
eMbO2 +fRe2 3 (ただし、MaはPb、Ca
の中から選ばれる少なくとも一種類、MbはTi、Z
r、Snの中から選ばれる少なくとも一種類、ReはL
a、Pr、Nd、Sm、Dy、Erの中から選ばれる少
なくとも一種類、a、b、c、d、eおよびfはモル
%)で表される主成分が97.5〜99.95重量%、
ただし、前記一般式のa、b、c、d、eおよびfがそ
れぞれ次の範囲にある 0.5≦a≦4.5 2.0≦b≦6.0 0.5≦c≦4.5 0 <d≦4.0 6.5≦e≦10.0 0.5≦f≦5.5 SiO2 を主成分とするガラスからなる第1副成分が
0.05〜2.5重量%、からなる誘電体磁器組成物で
ある。
Means for Solving the Problems The present invention has a general formula:
{100- (a + b + c + d + e + f)} BaTiO 3
+ AZnO + bBi 2 O 3 + cNb 2 O 5 + dMaO +
eMbO 2 + fRe 2 O 3 (However, Ma is Pb, Ca
Mb is Ti, Z
at least one selected from r and Sn, and Re is L
at least one selected from a, Pr, Nd, Sm, Dy, and Er; a, b, c, d, e, and f are mol%), and the main component represented by 97.5 to 99.95% by weight. %,
However, a, b, c, d, e and f in the above general formulas are respectively in the following ranges: 0.5 ≦ a ≦ 4.5 2.0 ≦ b ≦ 6.0 0.5 ≦ c ≦ 4. 50 <d ≦ 4.0 6.5 ≦ e ≦ 10.0 0.5 ≦ f ≦ 5.5 0.05 to 2.5% by weight of the first subcomponent composed of glass containing SiO 2 as a main component. And a dielectric porcelain composition comprising:

【0013】また、この発明は、一般式、{100−
(a+b+c+d+e+f)}BaTiO3 +aZnO
+bBi2 3 +cNb2 5 +dMaO+eMbO2
+fRe2 3 (ただし、MaはPb、Caの中から選
ばれる少なくとも一種類、MbはTi、Zr、Snの中
から選ばれる少なくとも一種類、ReはLa、Pr、N
d、Sm、Dy、Erの中から選ばれる少なくとも一種
類、a、b、c、d、eおよびfはモル%、0.5≦a
≦4.5、2.0≦b≦6.0、0.5≦c≦4.5、
0<d≦4.0、6.5≦e≦10.0、0.5≦f≦
5.5)で表される主成分が97.0〜99.94重量
%、SiO2 を主成分とするガラスからなる第1副成分
が0.05〜2.5重量%、Cr、Mn、Fe、Coお
よびNiの酸化物の中から選ばれる少なくとも一種類か
らなる第2副成分が0.01〜0.5重量%、からなる
誘電体磁器組成物である。
Further, the present invention provides a compound represented by the general formula:
(A + b + c + d + e + f)} BaTiO 3 + aZnO
+ BBi 2 O 3 + cNb 2 O 5 + dMaO + eMbO 2
+ FRe 2 O 3 (where Ma is at least one selected from Pb and Ca, Mb is at least one selected from Ti, Zr and Sn, and Re is La, Pr and N
at least one selected from d, Sm, Dy, and Er; a, b, c, d, e, and f are mol%, and 0.5 ≦ a
≦ 4.5, 2.0 ≦ b ≦ 6.0, 0.5 ≦ c ≦ 4.5,
0 <d ≦ 4.0, 6.5 ≦ e ≦ 10.0, 0.5 ≦ f ≦
5.5) The main component represented by 5.5) is 97.0 to 99.94% by weight, the first subcomponent composed of glass mainly containing SiO 2 is 0.05 to 2.5% by weight, Cr, Mn, A dielectric porcelain composition comprising 0.01 to 0.5% by weight of at least one second subcomponent selected from oxides of Fe, Co and Ni.

【0014】ここで、第1副成分であるSiO2 を主成
分とするガラスとしては、例えば、BaO−SrO−C
aO−Li2 O−SiO2 がある。このガラスは焼成温
度を1160℃以下にする焼結助剤であり、これに限ら
れるのものでなく、たとえば、BaO−Li2 O−B2
3 −SiO2 系などの酸化硼素を含む酸化物ガラスを
用いてもよい。また、SiO2 −B4 C系などの非酸化
物を含む系を用いてもよい。なお、ガラスの酸化硼素を
含む場合、セラミック原料の成形用バインダーとして水
系バインダーを用いるときは、酸化硼素の原料として水
に対して安定なB4 Cを用いるのが好ましい。
Here, as the glass mainly composed of SiO 2 as the first subcomponent, for example, BaO—SrO—C
there is aO-Li 2 O-SiO 2 . This glass is a sintering aid for lowering the sintering temperature to 1160 ° C. or lower, and is not limited thereto. For example, BaO—Li 2 O—B 2
An oxide glass containing boron oxide such as an O 3 —SiO 2 system may be used. Further, a system containing a non-oxide such as a SiO 2 -B 4 C system may be used. In the case where the glass contains boron oxide, when an aqueous binder is used as a molding binder for the ceramic raw material, it is preferable to use water-stable B 4 C as the boron oxide raw material.

【0015】[0015]

【発明の効果】この発明にかかる誘電体磁器組成物は、
1160℃以下の低温で焼成でき、−55℃から+15
0℃までの広い温度範囲にわたって、TCがR特性を満
足し、平坦な温度特性をもつ。したがって、この誘電体
磁器組成物を用いた磁器積層コンデンサは、種々の条件
下で温度変化の大きな場所にある、あらゆる電装機器に
使用することができる。
Industrial Applicability The dielectric porcelain composition according to the present invention comprises:
Can be fired at a low temperature of 1160 ° C or less, from -55 ° C to +15
TC satisfies the R characteristic over a wide temperature range up to 0 ° C. and has a flat temperature characteristic. Therefore, the ceramic laminated capacitor using this dielectric ceramic composition can be used for all electrical equipment located in a place where the temperature changes greatly under various conditions.

【0016】また、磁器の機械的強度が高いため、磁器
積層コンデンサとして用いる場合に、基板実装時におけ
る割れ、欠けなどの破壊が起こらない。そのため、ショ
ート不良や発熱による焼損などの事故を防ぐことができ
る。
In addition, since the porcelain has a high mechanical strength, when it is used as a porcelain multilayer capacitor, breakage such as cracking or chipping does not occur when mounted on a substrate. Therefore, accidents such as short-circuit failure and burning due to heat generation can be prevented.

【0017】さらに、バイアスTCが優れているため、
誘電体磁器層の厚みを10μm〜15μmと薄膜化する
ことが可能であり、磁器積層コンデンサの小型化かつ大
容量化を進めることができる。
Further, since the bias TC is excellent,
The thickness of the dielectric ceramic layer can be reduced to 10 μm to 15 μm, and the size and the capacity of the multilayer ceramic capacitor can be reduced.

【0018】この発明の上述の目的、その他の目的、特
徴および利点は、以下の実施例の詳細な説明から一層明
らかとなろう。
The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments.

【0019】[0019]

【実施例】まず、誘電体磁器組成物の主成分の調製法に
ついて述べる。出発原料として工業用原料であるBaT
iO3 、ZnO、Bi2 3 、Nb2 5 、MaO(M
aはPb、Ca)、MbO2 (MbはTi、Zr、S
n)、Re2 3 (ReはLa、Pr、Nd、Sm、D
y、Er)を準備した。これらの出発原料を、表1に示
す組成比となるように秤量し、ボ−ルミルで16時間湿
式混合粉砕した後、蒸発乾燥して混合粉末を得た。得ら
れた混合粉末をジルコニア質の匣に入れて、自然雰囲気
中で1000℃、2時間仮焼した後、200メッシュの
篩を通過するように粗粉砕して、磁器組成物の主成分の
原料粉末とした。
First, a method for preparing the main components of the dielectric ceramic composition will be described. BaT which is an industrial material as a starting material
iO 3 , ZnO, Bi 2 O 3 , Nb 2 O 5 , MaO (M
a is Pb, Ca), MbO 2 (Mb is Ti, Zr, S
n), Re 2 O 3 (Re is La, Pr, Nd, Sm, D
y, Er) was prepared. These starting materials were weighed so as to have the composition ratios shown in Table 1, wet-mixed and pulverized with a ball mill for 16 hours, and then dried by evaporation to obtain a mixed powder. The obtained mixed powder is placed in a zirconia box, calcined in a natural atmosphere at 1000 ° C. for 2 hours, and then coarsely pulverized so as to pass through a 200-mesh sieve. Powder.

【0020】次に誘電体磁器組成物の第1副成分の調製
法について述べる。この実施例では、焼成温度を116
0℃以下にする第1副成分として、組成が8BaO−6
SrO−6CaO−30Li2 O−50SiO2 (モル
%)で表される酸化物ガラスを用いた。出発原料として
工業用原料であるBaCO3 、SrCO3 、CaC
3 、Li2 O、及びSiO2 を準備した。これらの出
発原料を上記の組成となるように秤量し、ボ−ルミルで
16時間湿式混合粉砕した後、蒸発乾燥して混合粉末を
得た。得られた混合粉末をアルミナ製のるつぼに入れて
1300℃の温度で1時間放置し、その後急冷してガラ
ス化した。これを200メッシュの篩を通過するように
粉砕して、磁器組成物の第1副成分の原料粉末とした。
Next, a method for preparing the first subcomponent of the dielectric ceramic composition will be described. In this embodiment, the firing temperature is set to 116.
As a first subcomponent to be 0 ° C. or lower, the composition is 8BaO-6.
An oxide glass represented by SrO-6CaO-30Li 2 O- 50SiO 2 ( mol%). BaCO 3 , SrCO 3 , CaC which are industrial raw materials as starting materials
O 3 , Li 2 O, and SiO 2 were prepared. These starting materials were weighed so as to have the above composition, wet-mixed and pulverized for 16 hours with a ball mill, and then evaporated to dryness to obtain a mixed powder. The obtained mixed powder was placed in an alumina crucible, left at a temperature of 1300 ° C. for 1 hour, and then rapidly cooled to vitrify. This was pulverized so as to pass through a 200-mesh sieve to obtain a raw material powder of the first subcomponent of the porcelain composition.

【0021】以上のようにして得られた磁器組成物の第
1副成分の原料粉末を、磁器組成物の主成分の原料粉末
に対して、表1に示す重量比になるように添加した。
The raw material powder of the first subcomponent of the porcelain composition thus obtained was added to the raw material powder of the main component of the porcelain composition so as to have a weight ratio shown in Table 1.

【0022】また第2副成分について工業用原料である
Cr2 3 、MnO2 、Fe2 3、Co2 3 、及びN
iOを準備した。主成分組成が88.5BaTiO3
1.5ZnO−3.0Bi2 3 −1.0Nb2 5
2.0PbO−1.0TiO2 −0.5SnO2 −0.
5ZrO2 −2.0Nd2 3 (モル%)で、上記の第
1副成分を1.0重量%添加したものに対して、表2に
示す組成比となるように第2副成分を添加した。
The second subcomponent is Cr 2 O 3 , MnO 2 , Fe 2 O 3, Co 2 O 3 and N 2 which are industrial raw materials.
iO was prepared. The main component composition is 88.5BaTiO 3
1.5ZnO-3.0Bi 2 O 3 -1.0Nb 2 O 5 -
2.0 PbO-1.0 TiO 2 -0.5 SnO 2 -0.
5ZrO 2 -2.0Nd 2 O 3 (mol%), to which the above-mentioned first sub-component was added in an amount of 1.0% by weight, the second sub-component was added so as to have a composition ratio shown in Table 2. did.

【0023】これらにポリビニルブチラ−ル系のバイン
ダ及びトルエン、エチルアルコ−ルなどの有機溶剤を加
えて、ボ−ルミルで16時間湿式混合した後、ドクタ−
ブレ−ド法によりシ−ト成形を行って、グリーンシート
を得た。このグリ−ンシ−トの厚みは19μmであっ
た。このグリーンシートに内部電極パタ−ンをAg/P
d=70/30(重量%)のペ−ストを用いて印刷した
後、グリーンシートを6層積み重ねて、ダミ−のシ−ト
とともに熱圧着し、圧着体を得た。この圧着体から長さ
5.5mm、幅4.5mm、厚さ1mmの成形体を切り
出した。その後、この成形体を、それぞれ表3および表
4に示す焼成温度で2時間焼成し、焼結体を得た。焼結
後の誘電体厚みは13μmであった。
A polyvinyl butyral-based binder and an organic solvent such as toluene and ethyl alcohol were added thereto, and the mixture was wet-mixed with a ball mill for 16 hours.
A sheet was formed by a blade method to obtain a green sheet. The thickness of the green sheet was 19 μm. The internal electrode pattern is made of Ag / P on this green sheet.
After printing using a paste of d = 70/30 (% by weight), 6 layers of green sheets were stacked and thermocompression bonded together with a dummy sheet to obtain a compression body. A molded body having a length of 5.5 mm, a width of 4.5 mm, and a thickness of 1 mm was cut out from the pressed body. Thereafter, the molded body was fired at the firing temperatures shown in Tables 3 and 4 for 2 hours to obtain a sintered body. The dielectric thickness after sintering was 13 μm.

【0024】そして、得られた焼結体の端面に銀電極を
焼き付けて測定試料(積層コンデンサ)として、その室
温での誘電率(ε)、誘電損失(tanδ)、TCおよ
びバイアスTCを測定した。
Then, a silver electrode was baked on the end face of the obtained sintered body, and the dielectric constant (ε), dielectric loss (tan δ), TC and bias TC at room temperature were measured as a measurement sample (multilayer capacitor). .

【0025】この場合、誘電率(ε)および誘電損失
(tanδ)は、温度25℃、1kHz、1Vrmsの
条件下で測定した。TCは、25℃での静電容量を基準
として、−55℃〜+150℃の間における容量変化率
が最大である値、すなわち最大変化率(ΔCmax )を求
めた。またバイアスTCについては、上記の温度範囲で
直流電圧25Vを測定試料に重畳しながら、その静電容
量を測定して、温度25℃、印加直流電圧0Vのときの
静電容量を基準として、TCと同様に最大変化率(ΔC
maxB)を求めた。
In this case, the dielectric constant (ε) and the dielectric loss (tan δ) were measured at a temperature of 25 ° C., 1 kHz, and 1 Vrms. As for TC, a value at which the rate of change in capacitance between -55 ° C. and + 150 ° C. is the maximum, that is, the maximum rate of change (ΔC max ) was determined based on the capacitance at 25 ° C. As for the bias TC, the capacitance is measured while superimposing a DC voltage of 25 V on the measurement sample in the above temperature range, and the TC at a temperature of 25 ° C. and an applied DC voltage of 0 V is used as a reference. The maximum change rate (ΔC
maxB ) was determined.

【0026】また、磁器の抗折強度を3点曲げによって
測定した。まず、表1および表2に示したそれぞれの組
成の原料をシ−ト成形したものを圧着成形し、この圧着
体から長さ35mm、幅7mm、厚さ1.2mmの成形
体を切り出した。その後、これらの成形体をそれぞれ表
3および表4に示す焼成温度で2時間焼成し、短冊状の
磁器を得た。このようにして、それぞれの組成で20本
の試料について抗折強度を測定し、その平均をもって各
組成の抗折強度とした。
The bending strength of the porcelain was measured by three-point bending. First, materials obtained by sheet molding the raw materials having the respective compositions shown in Tables 1 and 2 were compression molded, and a molded body having a length of 35 mm, a width of 7 mm, and a thickness of 1.2 mm was cut out from the compressed body. Thereafter, these compacts were fired at the firing temperatures shown in Tables 3 and 4 for 2 hours to obtain strip-shaped porcelain. In this way, the bending strength was measured for 20 samples of each composition, and the average was defined as the bending strength of each composition.

【0027】以上の各試験の結果を、表1の組成物にお
ける結果を表3、表2の組成物における結果を表4にそ
れぞれ合わせて示す。
The results of the above tests are shown in Table 3 for the composition of Table 1, and Table 4 for the composition of Table 2.

【0028】この発明において主成分量、第1副成分量
および第2副成分量の範囲を限定した理由を説明する。
The reason why the ranges of the amounts of the main component, the first subcomponent, and the second subcomponent are limited in the present invention will be described.

【0029】まず、主成分組成を限定した理由について
説明する。aの値すなわちZnOについて、その範囲を
0.5〜4.5モル%としたのは、試料番号9のよう
に、0.5モル%未満では、TCが最大変化率(ΔC
max )で−15%を超え、抗折強度も1500kg/c
2 以下の低い値となり好ましくない。一方、試料番号
10のように、4.5モル%を超えると、TCが最大変
化率(ΔCmax )で−15%を超え、バイアスTCも−
40%を超える変化となり好ましくない。
First, the reason for limiting the main component composition will be described. The reason for setting the value of a, that is, ZnO, to 0.5 to 4.5 mol% is that as shown in Sample No. 9, when the concentration is less than 0.5 mol%, TC has a maximum change rate (ΔC
max ) exceeds -15%, and the bending strength is 1500 kg / c.
The value is as low as m 2 or less, which is not preferable. On the other hand, when the amount exceeds 4.5 mol% as in Sample No. 10, the TC exceeds -15% at the maximum rate of change (ΔC max ), and the bias TC also decreases
The change exceeds 40%, which is not preferable.

【0030】また、bの値すなわちBi2 3 につい
て、その範囲を2.0〜6.0モル%としたのは、試料
番号11のように、2.0モル%未満では、TCが最大
変化率(ΔCmax )で−15%を超え、抗折強度も15
00kg/cm2 以下の低い値となり好ましくない。一
方、試料番号12のように、bの値が6.0モル%を超
えると、誘電率(ε)が1000未満となり好ましくな
い。
The reason why the value of b, that is, Bi 2 O 3 , is set in the range of 2.0 to 6.0 mol% is that TC is less than 2.0 mol% as in Sample No. 11. The rate of change (ΔC max ) exceeds -15%, and the transverse rupture strength is 15
The value is as low as 00 kg / cm 2 or less, which is not preferable. On the other hand, when the value of b exceeds 6.0 mol% as in sample No. 12, the dielectric constant (ε) is less than 1000, which is not preferable.

【0031】cの値すなわちNb2 5 について、その
範囲を0.5〜4.5モル%としたのは、試料番号13
のように0.5モル%未満では、また試料番号14のよ
うに4.5モルを超えると、TCが最大変化率(ΔC
max )で−15%を超え、またバイアスTCも−40%
を超える変化となり好ましくない。
With respect to the value of c, that is, the range of 0.5 to 4.5 mol% for Nb 2 O 5 , sample number 13
When TC is less than 0.5 mol%, and when it exceeds 4.5 mol as in Sample No. 14, TC has a maximum change rate (ΔC
max ) exceeds -15% and the bias TC is -40%
, Which is not preferable.

【0032】また、dの値すなわちMaOについて、そ
の範囲を4.0モル%以下としたのは、試料番号15の
ように、4.0モル%を超えると、TCが最大変化率
(ΔCmax )で−15%を超える変化となり好ましくな
い。
The reason why the range of the value of d, ie, MaO, is set to 4.0 mol% or less is that as shown in Sample No. 15, when the content exceeds 4.0 mol%, the TC changes at a maximum rate of change (ΔC max). ) Changes more than -15%, which is not preferable.

【0033】eの値すなわちMbO2 について、その範
囲を6.5〜10.0モル%としたのは、試料番号16
のように6.5モル%未満では、または試料番号17の
ように10.0モル%を超えると、TCが最大変化率
(ΔCmax )で−15%を超える変化となり好ましくな
い。
With respect to the value of e, ie, MbO 2 , the range was set to 6.5 to 10.0 mol% in the case of sample No. 16.
If it is less than 6.5 mol% as in the above, or if it exceeds 10.0 mol% as in the sample No. 17, the TC changes in maximum change rate (ΔC max ) more than −15%, which is not preferable.

【0034】また、fの値すなわちRe2 3 につい
て、その範囲を0.5〜5.5モル%としたのは、試料
番号18のように、0.5モル%未満では、TCが最大
変化率(ΔCmax )で15%を超え、またバイアスTC
も−40%を超える変化となり好ましくない。一方、試
料番号19のように、5.5モル%を超えると、TCが
最大変化率(ΔCmax )で15%を超える変化となり好
ましくない。
The reason why the value of f, that is, Re 2 O 3 , is set in the range of 0.5 to 5.5 mol% is that TC is less than 0.5 mol% as in Sample No. 18. The rate of change (ΔC max ) exceeds 15% and the bias TC
Changes over -40%, which is not preferable. On the other hand, if the content exceeds 5.5 mol% as in sample No. 19, the TC changes by more than 15% at the maximum rate of change (ΔC max ), which is not preferable.

【0035】次に、第1副成分量を限定した理由につい
て説明する。第1副成分量について、その範囲を0.0
5〜2.5重量%としたのは、試料番号20のように、
第1副成分量が0.05重量%未満になると、焼成温度
が1160℃を超えるため好ましくない。一方、試料番
号22のように第1副成分量が2.5重量%を超える
と、誘電率(ε)が1000未満となり好ましくない。
Next, the reason why the amount of the first subcomponent is limited will be described. Regarding the amount of the first subcomponent, the range is set to 0.0
The reason for setting the content to 5 to 2.5% by weight is as shown in Sample No. 20,
If the amount of the first subcomponent is less than 0.05% by weight, the firing temperature exceeds 1160 ° C., which is not preferable. On the other hand, when the amount of the first subcomponent exceeds 2.5% by weight as in Sample No. 22, the dielectric constant (ε) is less than 1000, which is not preferable.

【0036】次に、第2副成分量を限定した理由につい
て説明する。この第2副成分は誘電体磁器の還元を防止
するためのものであり、第2副成分量について、その範
囲を0.01〜0.5重量%としたのは、第2副成分量
が0.01重量%未満であると還元防止の効果がなく、
一方、試料番号32のように0.5重量%を超えると、
誘電損失(tanδ)が2.5%を超える大きな値とな
るため好ましくない。
Next, the reason why the amount of the second subcomponent is limited will be described. The second sub-component is for preventing the reduction of the dielectric porcelain. The reason why the range of the second sub-component is set to 0.01 to 0.5% by weight is that the amount of the second sub-component is If it is less than 0.01% by weight, there is no effect of preventing reduction,
On the other hand, when the content exceeds 0.5% by weight as in Sample No. 32,
Since the dielectric loss (tan δ) becomes a large value exceeding 2.5%, it is not preferable.

【0037】上述の実施例においては、あらかじめ所定
の組成比に調合し、高温に熱処理して溶融した後に粉砕
してガラス化した第1副成分を、磁器組成物の主成分に
添加配合した。しかし、この第1副成分の添加方法とし
ては、この他、あらかじめ所定の割合に調合して溶融し
ない程度に加熱し、出発原料を改質したものを添加する
か、あるいは第1副成分の各構成元素を、例えば金属ア
ルコキシドといった任意の状態で主成分に対して個々に
添加し、焼成中に溶融反応してガラス化するようにして
もよい。
In the above-described embodiment, the first subcomponent which was previously prepared to have a predetermined composition ratio, heat-treated at a high temperature, melted, pulverized and vitrified, was added to the main component of the porcelain composition. However, as a method for adding the first sub-component, in addition to the above, the starting material is reformed by heating the mixture to such an extent that the first sub-component is not melted and added to the extent that the first sub-component is not melted. The constituent elements may be individually added to the main component in an arbitrary state, for example, a metal alkoxide, and may be vitrified by a melting reaction during firing.

【0038】また、第2副成分においても、上述の実施
例では、最初から酸化物の形で添加したが、原料作製時
の出発原料としては、各元素の炭酸物など、仮焼、焼成
の段階で酸化物になるものを用いてもよい。
In the above-mentioned embodiment, the second subcomponent was also added in the form of an oxide from the beginning. However, as a starting material at the time of preparing the raw material, a carbonate of each element or the like was used for calcination and firing. An oxide that becomes an oxide at the stage may be used.

【0039】[0039]

【表1】 [Table 1]

【0040】[0040]

【表2】 [Table 2]

【0041】[0041]

【表3】 [Table 3]

【0042】[0042]

【表4】 [Table 4]

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01B 3/12 303 C04B 35/46 H01G 4/12 358 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) H01B 3/12 303 C04B 35/46 H01G 4/12 358

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 次の一般式、 {100−(a+b+c+d+e+f)}BaTiO3
+aZnO+bBi23 +cNb2 5 +dMaO+
eMbO2 +fRe2 3 (ただし、MaはPb、Ca
の中から選ばれる少なくとも一種類、MbはTi、Z
r、Snの中から選ばれる少なくとも一種類、ReはL
a、Pr、Nd、Sm、Dy、Erの中から選ばれる少
なくとも一種類、a、b、c、d、eおよびfはモル
%)で表される主成分が97.5〜99.95重量%、 ただし、前記一般式のa、b、c、d、eおよびfがそ
れぞれ次の範囲にある 0.5≦a≦4.5 2.0≦b≦6.0 0.5≦c≦4.5 0 <d≦4.0 6.5≦e≦10.0 0.5≦f≦5.5 SiO2 を主成分とするガラスからなる第1副成分が
0.05〜2.5重量%、からなる誘電体磁器組成物。
1. The following general formula: {100− (a + b + c + d + e + f)} BaTiO 3
+ AZnO + bBi 2 O 3 + cNb 2 O 5 + dMaO +
eMbO 2 + fRe 2 O 3 (However, Ma is Pb, Ca
Mb is Ti, Z
at least one selected from r and Sn, and Re is L
at least one selected from a, Pr, Nd, Sm, Dy, and Er; a, b, c, d, e, and f are mol%), and the main component represented by 97.5 to 99.95% by weight. %, Wherein a, b, c, d, e and f in the above general formulas are respectively in the following ranges: 0.5 ≦ a ≦ 4.5 2.0 ≦ b ≦ 6.0 0.5 ≦ c ≦ 4.5 0 <a first auxiliary component composed of glass whose main component is d ≦ 4.0 6.5 ≦ e ≦ 10.0 0.5 ≦ f ≦ 5.5 SiO 2 is 0.05 to 2.5 % By weight of a dielectric porcelain composition.
【請求項2】 次の一般式、 {100−(a+b+c+d+e+f)}BaTiO3
+aZnO+bBi23 +cNb2 5 +dMaO+
eMbO2 +fRe2 3 (ただし、MaはPb、Ca
の中から選ばれる少なくとも一種類、MbはTi、Z
r、Snの中から選ばれる少なくとも一種類、ReはL
a、Pr、Nd、Sm、Dy、Erの中から選ばれる少
なくとも一種類、a、b、c、d、eおよびfはモル
%)で表される主成分が97.0〜99.94重量%、 ただし、前記一般式のa、b、c、d、eおよびfがそ
れぞれ次の範囲にある 0.5≦a≦4.5 2.0≦b≦6.0 0.5≦c≦4.5 0 <d≦4.0 6.5≦e≦10.0 0.5≦f≦5.5 SiO2 を主成分とするガラスからなる第1副成分が
0.05〜2.5重量%、 Cr、Mn、Fe、Coお
よびNiの酸化物の中から選ばれる少なくとも一種類か
らなる第2副成分が0.01〜0.5重量%、からなる
誘電体磁器組成物。
2. The following general formula: {100− (a + b + c + d + e + f)} BaTiO 3
+ AZnO + bBi 2 O 3 + cNb 2 O 5 + dMaO +
eMbO 2 + fRe 2 O 3 (However, Ma is Pb, Ca
Mb is Ti, Z
at least one selected from r and Sn, and Re is L
at least one selected from a, Pr, Nd, Sm, Dy, and Er; a, b, c, d, e, and f are mol%), and the main component represented by 97.0 to 99.94% by weight. %, Wherein a, b, c, d, e and f in the above general formulas are respectively in the following ranges: 0.5 ≦ a ≦ 4.5 2.0 ≦ b ≦ 6.0 0.5 ≦ c ≦ 4.5 0 <a first auxiliary component composed of glass whose main component is d ≦ 4.0 6.5 ≦ e ≦ 10.0 0.5 ≦ f ≦ 5.5 SiO 2 is 0.05 to 2.5 A dielectric porcelain composition comprising 0.01% to 0.5% by weight of a second subcomponent composed of at least one selected from oxides of Cr, Mn, Fe, Co and Ni.
JP21751993A 1993-07-26 1993-09-01 Dielectric porcelain composition Expired - Lifetime JP3252552B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP21751993A JP3252552B2 (en) 1993-09-01 1993-09-01 Dielectric porcelain composition
DE69409881T DE69409881T2 (en) 1993-07-26 1994-07-19 Dielectric ceramic composition
SG1996006730A SG43268A1 (en) 1993-07-26 1994-07-19 Dielectric ceramic compositions
EP94111243A EP0637041B1 (en) 1993-07-26 1994-07-19 Dielectric ceramic compositions
US08/278,620 US5432136A (en) 1993-07-26 1994-07-21 Dielectric ceramic compositions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21751993A JP3252552B2 (en) 1993-09-01 1993-09-01 Dielectric porcelain composition

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JP3252552B2 true JP3252552B2 (en) 2002-02-04

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KR100315749B1 (en) * 1999-10-22 2001-12-22 송재인 Dielectric magnetic composition for multi-layers board
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