JP2865925B2 - Method for producing dielectric porcelain composition - Google Patents
Method for producing dielectric porcelain compositionInfo
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- JP2865925B2 JP2865925B2 JP4025661A JP2566192A JP2865925B2 JP 2865925 B2 JP2865925 B2 JP 2865925B2 JP 4025661 A JP4025661 A JP 4025661A JP 2566192 A JP2566192 A JP 2566192A JP 2865925 B2 JP2865925 B2 JP 2865925B2
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Description
【０００１】[0001]
【産業上の利用分野】本発明は損失の小さな低誘電率の
誘電体磁器組成物の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a dielectric ceramic composition having a small loss and a low dielectric constant.
【０００２】[0002]
【従来の技術】損失の小さな低誘電率の誘電体磁器組成
物を誘電体層の材料に用いた磁器コンデンサは、一般
に、高周波回路におけるフィルター等に使用されてい
る。このような低誘電率の誘電体磁器組成物は一般的に
１２００〜１３００℃という高温で焼結されることが多
いので、これを積層磁器コンデンサの誘電体層の材料と
して使用する場合は、積層磁器コンデンサの内部電極の
材料にＰｔ，Ｐｄあるいはこれらの合金のような高融点
の金属を使う必要があった。2. Description of the Related Art A ceramic capacitor using a dielectric ceramic composition having a low loss and a low dielectric constant as a material of a dielectric layer is generally used for a filter in a high-frequency circuit. Since such a low dielectric constant dielectric porcelain composition is generally sintered at a high temperature of 1200 to 1300 ° C., when this is used as a material for a dielectric layer of a laminated porcelain capacitor, It has been necessary to use a high melting point metal such as Pt, Pd, or an alloy thereof as the material of the internal electrodes of the porcelain capacitor.
【０００３】[0003]
【発明が解決しようとする問題点】しかし、Ｐｔ，Ｐｄ
あるいはこれらの合金は電気伝導度が低く、これを内部
電極の材料として使用した積層磁器コンデンサを高周波
回路におけるフィルターに使用した場合は、損失が大き
くなり、Ｑが低下してしまうという欠点があった。この
ため、電気伝導度のより高いＡｇ，Ｃｕ等の金属を積層
磁器コンデンサの内部電極の材料として使用できるよう
に、１０００℃以下、好ましくは９００℃以下の温度の
焼成で緻密に焼結させることができ、しかも所望の電気
特性を備えている誘電体磁器組成物を開発する必要があ
った。However, Pt, Pd
Alternatively, these alloys have low electric conductivity, and when a laminated ceramic capacitor using this as a material of an internal electrode is used for a filter in a high-frequency circuit, there is a drawback that loss increases and Q decreases. . Therefore, in order to use a metal having a higher electric conductivity, such as Ag or Cu, as a material for the internal electrode of the laminated ceramic capacitor, it should be densely sintered by firing at a temperature of 1000 ° C. or less, preferably 900 ° C. or less. Therefore, it was necessary to develop a dielectric ceramic composition having the desired electrical characteristics.
【０００４】本発明の目的は、９００℃以下の温度の焼
成で緻密に焼結させることができ、しかも所望の電気特
性を備えている低誘電率の誘電体磁器組成物の製造方法
を提供することにある。An object of the present invention is to provide a method for producing a dielectric ceramic composition having a low dielectric constant, which can be densely sintered by firing at a temperature of 900 ° C. or less and has desired electric characteristics. It is in.
【０００５】[0005]
【課題を解決するための手段】本発明に係る誘電体磁器
組成物の製造方法は、焼成して酸化物となるＢａ，Ｃ
ａ，Ｓｒ，Ｓｉ，Ｚｒ，Ａｌ及びＴｉの各原料化合物の
中の少なくともＢａ，Ｃａ，Ｓｒ及びＳｉの各原料化合
物を混合して加熱溶融する工程と、この溶融したものを
急冷してガラス化する工程と、このガラス化したものを
微粉砕する工程と、この微粉砕したものを含めて全ての
原料化合物及びバインダを混合する工程と、この混合に
よって得られた混合物を成形する工程と、この成形した
ものを９００℃以下の温度で焼成する工程とを備え、 前記各原料化合物が、組成式：ａ（ｘＢａ−ｙＣａ−ｚ
Ｓｒ）Ｏ−ｂＳｉＯ２−ｃＺｒＯ２ −（ｄ／２）Ａｌ
２ Ｏ３ −ｅＴｉＯ２ で表わされる組成物を主成分とする焼結体からなるもの
である。According to the present invention, there is provided a method for producing a dielectric porcelain composition, the method comprising the steps of:
a) mixing at least Ba, Ca, Sr and Si starting compounds among the starting compounds of a, Sr, Si, Zr, Al and Ti, heating and melting, and rapidly quenching and melting the molten material; A step of pulverizing the vitrified material, a step of mixing all the raw material compounds and the binder including the pulverized material, and a step of mixing
Accordingly, the method includes a step of molding the obtained mixture, and a step of firing the molded article at a temperature of 900 ° C. or less , wherein each of the raw material compounds has a composition formula: a (xBa-yCa-z
Sr) O-bSiO 2 -cZrO 2 - (d / 2) Al
2 O 3 -eTiO 2 And a sintered body mainly composed of the composition represented by
【０００６】ここで、原料化合物としては、焼成して酸
化物となるＢａ，Ｃａ，Ｓｒ，Ｓｉ，Ｚｒ，Ａｌ及びＴ
ｉの各化合物を使用することができる。後述する実施例
では、原料化合物としてＢａＣＯ３ ，ＣａＣＯ３ ，Ｓ
ｒＣＯ３ ，ＳｉＯ２ ，ＺｒＯ２ ，Ａｌ２ Ｏ３ 及び
ＴｉＯ２ を原料化合物として使用したが、加熱によっ
て酸化物となるものであればこれら以外の化合物を使用
できることはもちろんである。Here, the raw material compounds include Ba, Ca, Sr, Si, Zr, Al and T
Each compound of i can be used. In Examples described later, BaCO 3 , CaCO 3 , S
Although rCO 3 , SiO 2 , ZrO 2 , Al 2 O 3 and TiO 2 were used as raw material compounds, it is a matter of course that other compounds can be used as long as they become oxides by heating.
【０００７】また、Ｚｒ，Ａｌ及びＴｉの各化合物につ
いては、他の原料化合物とともにガラス化して使用して
もよいし、あるいはガラス化した他の原料化合物に後か
ら混合して使用してもよい。いずれの場合も所望の誘電
体磁器組成物を得ることができる。The respective compounds of Zr, Al and Ti may be used after being vitrified with other raw material compounds, or may be used after being mixed with other vitrified raw material compounds. . In any case, a desired dielectric porcelain composition can be obtained.
【０００８】また、原料化合物について、５モル％≦ａ
≦６０モル％としたのは、ａが５モル％未満になった
り、６０モル％を越えたりすると、いずれの場合も、９
００℃の温度の焼成で緻密な焼結体が得られなくなるか
らである。また、１０モル％≦ｂ≦７０モル％としたの
は、ｂが１０モル％未満になると組成物がガラス化せ
ず、ｂが７０モル％を越えると、９００℃の焼成で緻密
な焼結体が得られなくなるからである。Further, as for the starting compound, 5 mol% ≦ a
≦ 60 mol% is satisfied when a is less than 5 mol% or exceeds 60 mol%.
This is because a dense sintered body cannot be obtained by firing at a temperature of 00 ° C. The reason why 10 mol% ≦ b ≦ 70 mol% is that when b is less than 10 mol%, the composition does not vitrify, and when b exceeds 70 mol%, dense sintering is performed at 900 ° C. It is because the body cannot be obtained.
【０００９】また、９．２モル％≦ｃ≦３０モル％とし
たのは、ｃが３０モル％を越えると、９００℃の焼成で
緻密な焼結体が得られなくなるからである。また、２．
３モル％≦ｄ≦３０モル％としたのは、ｄが３０モル％
を越えると、９００℃の焼成で緻密な焼結体が得られな
くなるからである。また、４．６モル％≦ｅ≦３０モル
％としたのは、ｅが３０モル％を越えると、９００℃の
焼成で緻密な焼結体が得られなくなるからである。The reason why 9.2 mol% ≦ c ≦ 30 mol% is that if c exceeds 30 mol%, a dense sintered body cannot be obtained by firing at 900 ° C. Also, 2.
The reason that 3 mol% ≦ d ≦ 30 mol% is that d is 30 mol%
This is because if the temperature exceeds 900, a dense sintered body cannot be obtained by firing at 900 ° C. The reason why 4.6 mol% ≦ e ≦ 30 mol% is that if e exceeds 30 mol%, a dense sintered body cannot be obtained by firing at 900 ° C.
【００１０】[0010]
【実施例】実施例１及び比較例１ まず、表１の試料No.1-1の場合について説明する。Ｂａ
ＣＯ３ ，ＣａＣＯ３ ，ＳｒＣＯ３ ，ＳｉＯ２ ，Ｚｒ
Ｏ２ ，Ａｌ２ Ｏ３ 及びＴｉＯ２ を、表１の試料No.1
-1に示すモル比で秤量し、これらを水とともにボールミ
ルに入れ、湿式で十分に攪拌混合して混合物を得た。EXAMPLES Example 1 and Comparative Example 1 First, the case of Sample No. 1-1 in Table 1 will be described. Ba
CO 3 , CaCO 3 , SrCO 3 , SiO 2 , Zr
O 2 , Al 2 O 3 and TiO 2 were converted to the sample No. 1 in Table 1.
These were weighed at a molar ratio of -1 and placed in a ball mill together with water, and thoroughly stirred and mixed by a wet method to obtain a mixture.
【００１１】次に、この混合物を乾燥した後、坩堝に入
れて１７００℃に加熱し、溶融した混合物を水中に滴下
して急冷し、ガラスを得た。そして、このガラスを粉砕
して、平均粒径１μｍ程度の微粉末とし、このガラス粉
末に有機バインダー（ＰＶＡ）を加えて十分に混合し、
１ton/cm２ の圧力で直径１０mm、厚み１mmの円板状の
成形体を作製した。Next, after drying this mixture, it was placed in a crucible and heated to 1700 ° C., and the molten mixture was dropped into water and quenched to obtain glass. Then, the glass is pulverized to a fine powder having an average particle size of about 1 μm, and an organic binder (PVA) is added to the glass powder and mixed sufficiently.
At a pressure of 1 ton / cm 2, a disk-shaped compact having a diameter of 10 mm and a thickness of 1 mm was prepared.
【００１２】次に、この成形体を焼成炉に入れ、大気雰
囲気中において４００〜６００℃で１０時間保持して成
形体中の有機バインダーを燃焼除去させ、その後、炉内
温度を９００℃まで上昇させ、この温度で２時間保持さ
せて成形体を焼結させた。Next, the molded body is placed in a firing furnace, and kept at 400 to 600 ° C. for 10 hours in an air atmosphere to burn off the organic binder in the molded body. Thereafter, the furnace temperature is raised to 900 ° C. The molded body was kept at this temperature for 2 hours to sinter the molded body.
【００１３】次に、この焼結させた成形体の表裏面に銀
ペーストを塗布して焼き付け、直径７mmの銀電極を表裏
面に備えた測定用の試料を得た。そして、この試料の電
気特性（比誘電率εｒ 及びＱ）を、１ＭＨｚ，１Ｖｒ
ｍｓ，２０℃の条件で測定した。結果は表１の試料No.1
-1の電気特性の欄に示す通りとなった。Next, a silver paste was applied to the front and back surfaces of the sintered compact and baked to obtain a measurement sample having silver electrodes having a diameter of 7 mm on the front and back surfaces. Then, the electrical characteristics (relative permittivity ε r and Q) of this sample were measured at 1 MHz and 1 Vr.
ms, 20 ° C. The results are shown in Table 1 for sample No. 1.
As shown in the column of electrical characteristics of -1.
【００１４】以上、No.1-1の試料の作製方法及びその電
気特性の測定方法について述べたが、試料No.1-2〜1-23
についても、組成を表１に示すように変化させた他は、
No.1-1の試料と全く同一の方法で試料を作製し、全く同
一の方法でその電気特性を測定した。結果は表１の電気
特性の欄に示す通りとなった。The method for preparing the sample No. 1-1 and the method for measuring the electrical characteristics of the sample have been described above.
, Also except that the composition was changed as shown in Table 1,
A sample was prepared by exactly the same method as the sample of No. 1-1, and its electrical characteristics were measured by the exactly same method. The results were as shown in the column of electrical characteristics in Table 1.
【００１５】[0015]
【表１】 [Table 1]
【００１６】次に、表１に示す結果について、各Noの試
料の組成及びその電気特性等を参照しながら説明する。
まず、試料No.1-1〜1-3 に示すように、ａが６０モル％
で、Ｂａの量が０〜６０モル％の範囲（０≦ｘ≦１）に
ある場合は所望の電気特性の組成物が得られる。また、
試料No.1-4〜1-6 に示すように、ａが６０モル％で、Ｃ
ａの量が０〜６０モル％の範囲（０≦ｙ≦１）にある場
合は所望の電気特性の組成物が得られる。更に、試料N
o.1-7〜1-9 に示すように、ａが６０モル％で、Ｓｒの
量が０〜６０モル％の範囲（０≦ｚ≦１）にある場合は
所望の電気特性の組成物が得られる。Next, the results shown in Table 1 will be described with reference to the composition of each No. sample and its electrical characteristics.
First, as shown in Sample Nos. 1-1 to 1-3, a was 60 mol%.
When the amount of Ba is in the range of 0 to 60 mol% (0 ≦ x ≦ 1), a composition having desired electric characteristics can be obtained. Also,
As shown in Sample Nos. 1-4 to 1-6, when a was 60 mol% and C
When the amount of a is in the range of 0 to 60 mol% (0 ≦ y ≦ 1), a composition having desired electric characteristics can be obtained. Furthermore, sample N
As shown in o.1-7 to 1-9, when a is 60 mol% and the amount of Sr is in the range of 0 to 60 mol% (0 ≦ z ≦ 1), the composition having desired electric properties is obtained. Is obtained.
【００１７】また、試料No.1-1〜1-11に示すように、ａ
が５〜６０モル％の場合は所望の電気特性の組成物が得
られるが、試料No.1-12 に示すように、ａが３モル％に
なるか、試料No.1-13 に示すように、ａが６５モル％に
なると、組成物が９００℃で焼結しなくなる。従って、
ａの適正範囲は５〜６０モル％である。As shown in Sample Nos. 1-1 to 1-11, a
Is 5 to 60 mol%, a composition having desired electric characteristics can be obtained. However, as shown in Sample No. 1-12, a becomes 3 mol% or as shown in Sample No. 1-13. When a becomes 65 mol%, the composition does not sinter at 900 ° C. Therefore,
The appropriate range for a is 5 to 60 mol%.
【００１８】次に、試料No.1-15,1-16に示すように、ｂ
が１０〜７０モル％の場合は所望の電気特性の組成物が
得られるが、試料No.1-14 に示すように、ｂが５モル％
になると組成物がガラス化せず、また、試料No.1-17 に
示すように、ｂが７５モル％になると、組成物が１７０
０℃で溶融しなくなる。従って、ｂの適正範囲は１０〜
７０モル％である。Next, as shown in Sample Nos. 1-15 and 1-16, b
Is 10 to 70 mol%, a composition having desired electric characteristics can be obtained. However, as shown in Sample No. 1-14, b is 5 mol%.
When b becomes 75 mol%, as shown in Sample No. 1-17, the composition does not vitrify.
No melting at 0 ° C. Therefore, the appropriate range of b is 10 to
70 mol%.
【００１９】次に、試料No.1-18 に示すように、ｃが３
０モル％の場合は所望の電気特性の組成物が得られる
が、試料No.1-19 に示すように、ｃが３５モル％になる
と、組成物が９００℃で焼結しなくなる。従って、ｃの
適正範囲は少なくとも３０モル％以下である。Next, as shown in Sample No. 1-18, c was 3
In the case of 0 mol%, a composition having desired electric characteristics can be obtained. However, as shown in Sample No. 1-19, when c becomes 35 mol%, the composition does not sinter at 900 ° C. Therefore, the appropriate range of c is at least 30 mol% or less.
【００２０】次に、試料No.1-20 に示すように、ｄが３
０モル％の場合は所望の電気特性の組成物が得られる
が、試料No.1-21 に示すように、ｄが３５モル％になる
と、組成物が９００℃で焼結しなくなる。従って、ｄの
適正範囲は少なくとも３０モル％以下である。Next, as shown in Sample No. 1-20, d was 3
In the case of 0 mol%, a composition having desired electrical characteristics can be obtained, but as shown in Sample No. 1-21, when d becomes 35 mol%, the composition does not sinter at 900 ° C. Therefore, the appropriate range of d is at least 30 mol% or less.
【００２１】次に、試料No.1-22 に示すように、ｅが３
０モル％の場合は所望の電気特性の組成物が得られる
が、試料No.1-23 に示すように、ｅが３５モル％になる
と、組成物が９００℃で焼結しなくなる。従って、ｅの
適正範囲は少なくとも３０モル％以下である。Next, as shown in sample No. 1-22, e was 3
In the case of 0 mol%, a composition having desired electric characteristics can be obtained. However, as shown in Sample No. 1-23, when e becomes 35 mol%, the composition does not sinter at 900 ° C. Therefore, the appropriate range of e is at least 30 mol% or less.
【００２２】実施例２及び比較例２ 実施例１で使用したものと同様の原料化合物を、ＴｉＯ
２ を除き、表２に示す割合で秤量して混合し、実施例
１と同様に加熱溶融して急冷し、得られたガラスにＴｉ
Ｏ２ を表２に示す割合で加え、これらを湿式で粉砕混
合して混合物を得た。以後は、この混合物を用いて、実
施例１と同様の手順で測定用の試料を作製し、その電気
特性を測定した。結果は表２の電気特性の欄に示す通り
となった。この結果によれば、実施例２及び比較例２の
ようにして製造した誘電体磁器組成物も実施例１及び比
較例１の場合と全く同様の傾向を示した。しかして、実
施例２及び比較例２ではＴｉＯ２ を他の原料化合物と
ともにガラス化しなくても実施例１及び比較例１の場合
と同様の結果が得られることがわかる。Example 2 and Comparative Example 2 The same starting compound as used in Example 1 was
2 and weighed in the proportions shown in Table 2, mixed, heated and melted in the same manner as in Example 1, and rapidly cooled.
O 2 was added at the ratio shown in Table 2, and these were pulverized and mixed by a wet method to obtain a mixture. Thereafter, using this mixture, a sample for measurement was prepared in the same procedure as in Example 1, and its electrical characteristics were measured. The results were as shown in the column of electrical characteristics in Table 2. According to the results, the dielectric ceramic compositions manufactured as in Example 2 and Comparative Example 2 showed exactly the same tendency as in Example 1 and Comparative Example 1. Thus, it can be seen that in Example 2 and Comparative Example 2, the same results as in Example 1 and Comparative Example 1 can be obtained without vitrifying TiO 2 together with other raw material compounds.
【００２３】[0023]
【表２】 [Table 2]
【００２４】実施例３及び比較例３ 実施例１で使用したものと同様の原料化合物を、Ａｌ２
Ｏ３ を除き、表３に示す割合で秤量して混合し、実施
例１と同様に加熱溶融して急冷し、得られたガラスにＡ
ｌ２ Ｏ３ を表３に示す割合で加え、湿式で粉砕混合し
て混合物を得た。以後は、この混合物を用いて、実施例
１と同様の手順で測定用の試料を作製し、その電気特性
を測定した。結果は表３の電気特性の欄に示す通りとな
った。この結果によれば、実施例３及び比較例３のよう
にして製造した誘電体磁器組成物も実施例１及び比較例
１の場合と全く同様の傾向を示した。しかして、実施例
３及び比較例３ではＡｌ２ Ｏ３ を他の原料化合物とと
もにガラス化しなくても実施例１及び比較例１の場合と
同様の結果が得られることがわかる。[0024] The same starting compound as used in Example 3 and Comparative Example 3 Example 1, Al 2
Except for O 3, they were weighed and mixed at the ratios shown in Table 3, heated and melted and quenched in the same manner as in Example 1, and A was added to the obtained glass.
l 2 O 3 was added at the ratio shown in Table 3 and wet-milled to obtain a mixture. Thereafter, using this mixture, a sample for measurement was prepared in the same procedure as in Example 1, and its electrical characteristics were measured. The results were as shown in the column of electrical characteristics in Table 3. According to this result, the dielectric ceramic compositions produced as in Example 3 and Comparative Example 3 showed exactly the same tendency as in Example 1 and Comparative Example 1. Thus, in Example 3 and Comparative Example 3, it can be seen that the same results as in Example 1 and Comparative Example 1 can be obtained without vitrifying Al 2 O 3 together with other raw material compounds.
【００２５】[0025]
【表３】 [Table 3]
【００２６】実施例４及び比較例４ 実施例１で使用したものと同様の原料化合物を、ＺｒＯ
２ を除き、表４に示す割合で秤量して混合し、実施例
１と同様に加熱溶融して急冷し、得られたガラスにＺｒ
Ｏ２ を表４に示す割合で加え、湿式で粉砕混合して混
合物を得た。以後は、この混合物を用いて、実施例１と
同様の手順で測定用の試料を作製し、その電気特性を測
定した。結果は表４の電気特性の欄に示す通りとなっ
た。この結果によれば、実施例４及び比較例４のように
して製造した誘電体磁器組成物も実施例１及び比較例１
の場合と全く同様の傾向を示した。しかして、実施例４
及び比較例４ではＺｒＯ２ を他の原料化合物とともに
ガラス化しなくても実施例１及び比較例１の場合と同様
の結果が得られることがわかる。Example 4 and Comparative Example 4 The same starting compound as used in Example 1 was prepared by using ZrO
2 and weighed in the proportions shown in Table 4, mixed, heated and melted and quenched in the same manner as in Example 1, and Zr was added to the obtained glass.
O 2 was added at the ratio shown in Table 4 and wet-milled to obtain a mixture. Thereafter, using this mixture, a sample for measurement was prepared in the same procedure as in Example 1, and its electrical characteristics were measured. The results were as shown in the column of electrical characteristics in Table 4. According to this result, the dielectric ceramic compositions manufactured as in Example 4 and Comparative Example 4 were also used in Example 1 and Comparative Example 1.
The same tendency as in the case of was shown. Thus, Embodiment 4
Also, in Comparative Example 4, it can be seen that the same results as in Example 1 and Comparative Example 1 can be obtained without vitrifying ZrO 2 together with other raw material compounds.
【００２７】[0027]
【表４】 [Table 4]
【００２８】実施例５及び比較例５ 実施例１で使用したものと同様の原料化合物を、Ａｌ２
Ｏ３ 及びＴｉＯ２を除き、表５に示す割合で秤量して
混合し、実施例１と同様に加熱溶融して急冷し、得られ
たガラスにＡｌ２ Ｏ３ 及びＴｉＯ２ を表５に示す割
合で加え、湿式で粉砕混合して混合物を得た。以後は、
この混合物を用いて、実施例１と同様の手順で測定用の
試料を作製し、その電気特性を測定した。結果は表５の
電気特性の欄に示す通りとなった。この結果によれば、
実施例５及び比較例５のようにして製造した誘電体磁器
組成物も実施例１及び比較例１の場合と全く同様の傾向
を示した。しかして、実施例５及び比較例５ではＡｌ２
Ｏ３ 及びＴｉＯ２ を他の原料化合物とともにガラス
化しなくても実施例１及び比較例１の場合と同様の結果
が得られることがわかる。Example 5 and Comparative Example 5 The same starting compound as that used in Example 1 was obtained by using Al 2
Except for O 3 and TiO 2, they were weighed and mixed at the ratios shown in Table 5, heated and melted and quenched as in Example 1, and Al 2 O 3 and TiO 2 were shown in Table 5 in the obtained glass. The mixture was added at a ratio and wet-milled to obtain a mixture. After that,
Using this mixture, a sample for measurement was prepared in the same procedure as in Example 1, and its electrical characteristics were measured. The results were as shown in the column of electrical characteristics in Table 5. According to this result,
The dielectric ceramic compositions manufactured as in Example 5 and Comparative Example 5 also showed exactly the same tendency as in Example 1 and Comparative Example 1. Thus, in Example 5 and Comparative Example 5, Al 2
It can be seen that the same results as in Example 1 and Comparative Example 1 can be obtained without vitrifying O 3 and TiO 2 together with other raw material compounds.
【００２９】[0029]
【表５】 [Table 5]
【００３０】実施例６及び比較例６ 実施例１で使用したものと同様の原料化合物を、ＺｒＯ
２ 及びＴｉＯ２ を除き、表６に示す割合で秤量して混
合し、実施例１と同様に加熱溶融して急冷し、得られた
ガラスにＺｒＯ２ 及びＴｉＯ２ を表６に示す割合で加
え、湿式で粉砕混合して混合物を得た。以後は、この混
合物を用いて、実施例１と同様の手順で測定用の試料を
作製し、その電気特性を測定した。結果は表６の電気特
性の欄に示す通りとなった。この結果によれば、実施例
６及び比較例６のようにして製造した誘電体磁器組成物
も実施例１及び比較例１の場合と全く同様の傾向を示し
た。しかして、実施例６及び比較例６ではＺｒＯ２ 及
びＴｉＯ２ を他の原料化合物とともにガラス化しなく
ても実施例１及び比較例１の場合と同様の結果が得られ
ることがわかる。EXAMPLE 6 AND COMPARATIVE EXAMPLE 6 The same starting compound as used in Example 1 was replaced with ZrO
Except for 2 and TiO 2, they were weighed and mixed at the ratios shown in Table 6, heated and melted and quenched as in Example 1, and ZrO 2 and TiO 2 were added to the resulting glass at the ratios shown in Table 6. The mixture was pulverized and mixed by a wet method to obtain a mixture. Thereafter, using this mixture, a sample for measurement was prepared in the same procedure as in Example 1, and its electrical characteristics were measured. The results were as shown in the column of electrical characteristics in Table 6. According to this result, the dielectric ceramic compositions manufactured as in Example 6 and Comparative Example 6 showed the same tendency as in Example 1 and Comparative Example 1. Thus, it can be seen that in Example 6 and Comparative Example 6, the same results as in Example 1 and Comparative Example 1 can be obtained without vitrifying ZrO 2 and TiO 2 together with other raw material compounds.
【００３１】[0031]
【表６】 [Table 6]
【００３２】実施例７及び比較例７ 実施例１で使用したものと同様の原料化合物を、ＺｒＯ
２ 及びＡｌ２ Ｏ３を除き、表７に示す割合で秤量して
混合し、実施例１と同様に加熱溶融して急冷し、得られ
たガラスにＺｒＯ２ 及びＡｌ２ Ｏ３ を表７に示す割
合で加え、湿式で粉砕混合して混合物を得た。以後は、
この混合物を用いて、実施例１と同様の手順で測定用の
試料を作製し、その電気特性を測定した。結果は表７の
電気特性の欄に示す通りとなった。この結果によれば、
実施例７及び比較例７のようにして製造した誘電体磁器
組成物も実施例１及び比較例１の場合と全く同様の傾向
を示した。しかして、実施例７及び比較例７ではＺｒＯ
２ 及びＡｌ２ Ｏ３ を他の原料化合物とともにガラス
化しなくても実施例１及び比較例１の場合と同様の結果
が得られることがわかる。Example 7 and Comparative Example 7 The same starting compounds as those used in Example 1
Except for 2 and Al 2 O 3, they were weighed and mixed at the ratios shown in Table 7, heated and melted and quenched in the same manner as in Example 1, and ZrO 2 and Al 2 O 3 were added to the obtained glass as shown in Table 7. The mixture was added at the indicated ratio, and the mixture was pulverized and mixed by a wet method to obtain a mixture. After that,
Using this mixture, a sample for measurement was prepared in the same procedure as in Example 1, and its electrical characteristics were measured. The results were as shown in the column of electrical characteristics in Table 7. According to this result,
The dielectric ceramic compositions manufactured as in Example 7 and Comparative Example 7 also showed exactly the same tendency as in Example 1 and Comparative Example 1. Thus, in Example 7 and Comparative Example 7, ZrO
It can be seen that the same results as in Example 1 and Comparative Example 1 can be obtained without vitrifying 2 and Al 2 O 3 together with other raw material compounds.
【００３３】[0033]
【表７】 [Table 7]
【００３４】実施例８及び比較例８ 実施例１で使用したものと同様の原料化合物を、ＺｒＯ
２ ，Ａｌ２ Ｏ３ 及びＴｉＯ２ を除き、表８に示す割
合で秤量して混合し、実施例１と同様に加熱溶融して急
冷し、得られたガラスにＺｒＯ２ ，Ａｌ２ Ｏ３ 及び
ＴｉＯ２ を表８に示す割合で加え、湿式で粉砕混合し
て混合物を得た。以後は、この混合物を用いて、実施例
１と同様の手順で測定用の試料を作製し、その電気特性
を測定した。結果は表８の電気特性の欄に示す通りとな
った。この結果によれば、実施例８及び比較例８のよう
にして製造した誘電体磁器組成物も実施例１及び比較例
１の場合と全く同様の傾向を示した。しかして、実施例
８及び比較例８ではＺｒＯ２ ，Ａｌ２ Ｏ３ 及びＴｉ
Ｏ２ を他の原料化合物とともにガラス化しなくても実
施例１及び比較例１の場合と同様の結果が得られること
がわかる。Example 8 and Comparative Example 8 The same starting compound as used in Example 1 was prepared by
2 , Al 2 O 3 and TiO 2 were removed, weighed and mixed in the proportions shown in Table 8, heated and melted and quenched in the same manner as in Example 1, and the resulting glass was ZrO 2 , Al 2 O 3 and TiO 2 was added at the ratio shown in Table 8 and pulverized and mixed by a wet method to obtain a mixture. Thereafter, using this mixture, a sample for measurement was prepared in the same procedure as in Example 1, and its electrical characteristics were measured. The results were as shown in the column of electrical characteristics in Table 8. According to this result, the dielectric ceramic compositions manufactured as in Example 8 and Comparative Example 8 showed exactly the same tendency as in Example 1 and Comparative Example 1. Thus, in Example 8 and Comparative Example 8, ZrO 2 , Al 2 O 3 and Ti
It can be seen that the same results as in Example 1 and Comparative Example 1 can be obtained even if O 2 is not vitrified with other raw material compounds.
【００３５】[0035]
【表８】 [Table 8]
【００３６】[0036]
【発明の効果】本発明によれば、従来よりも低い温度の
焼成で所望の電気的特性を有する低誘電率の誘電体磁器
組成物を得ることができるので、高周波用磁器コンデン
サの内部電極としてＡｇやＣｕのような電気伝導度の良
い、安価な材料を使用することができ、従って、従来よ
りも更にＱの大きな電気的特性の優れた磁器コンデンサ
を安価に提供することができるという効果がある。According to the present invention, a low dielectric constant dielectric ceramic composition having desired electric characteristics can be obtained by firing at a lower temperature than in the prior art, so that it can be used as an internal electrode of a high frequency ceramic capacitor. An inexpensive material having good electric conductivity such as Ag or Cu can be used, and therefore, there is an effect that a ceramic capacitor having a larger Q and excellent electric characteristics can be provided at a low cost. is there.
【００３７】また、この発明によれば、従来よりも低い
温度の焼成で所望の電気的特性を有する誘電体磁器組成
物を得ることができるので、誘電体磁器組成物を焼結さ
せるためのエネルギーコストを低下させることができ、
従って、従来よりも安価な磁器コンデンサを提供するこ
とができるという効果がある。Further, according to the present invention, a dielectric ceramic composition having desired electrical characteristics can be obtained by firing at a lower temperature than in the prior art, so that energy for sintering the dielectric ceramic composition can be obtained. Costs can be reduced,
Therefore, there is an effect that a less expensive porcelain capacitor can be provided.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｂ 3/12 ３３５ Ｃ０４Ｂ 35/49 Ｚ (72)発明者 成田 直人 東京都台東区上野６丁目16番20号 太陽 誘電株式会社内 (72)発明者 水野 洋一 東京都台東区上野６丁目16番20号 太陽 誘電株式会社内 (72)発明者 増田 淳 東京都台東区上野６丁目16番20号 太陽 誘電株式会社内 (56)参考文献 特開 平１−102808（ＪＰ，Ａ) 特公 昭43−2441（ＪＰ，Ｂ１)──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification symbol FI H01B 3/12 335 C04B 35/49 Z (72) Inventor Naoto Narita 6-16-20 Ueno Taito-ku, Tokyo Taiyo Yuden Co., Ltd. (72) Inventor Yoichi Mizuno 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Yuden Co., Ltd. (72) Inventor Jun Masuda 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Yuden Co., Ltd. (56) References JP-A-1-102808 (JP, A) JP-B-43-2441 (JP, B1)
Claims (1)
ｒ，Ｓｉ，Ｚｒ，Ａｌ及びＴｉの各原料化合物の中の少
なくともＢａ，Ｃａ，Ｓｒ及びＳｉの各原料化合物を混
合して加熱溶融する工程と、この溶融したものを急冷し
てガラス化する工程と、このガラス化したものを微粉砕
する工程と、この微粉砕したものを含めて全ての原料化
合物及びバインダを混合する工程と、この混合によって
得られた混合物を成形する工程と、この成形したものを
９００℃以下の温度で焼成する工程とを備え、 前記各原料化合物が、式：ａ（ｘＢａ−ｙＣａ−ｚＳ
ｒ）Ｏ−ｂＳｉＯ２ −ｃＺｒＯ２ −（ｄ／２）Ａｌ２
Ｏ３ −ｅＴｉＯ２ で表わされる割合になっていることを特徴とする誘電体
磁器組成物の製造方法。1. Ba, Ca, S which becomes an oxide by firing
a step of mixing at least each of Ba, Ca, Sr and Si starting compounds among the starting compounds of r, Si, Zr, Al and Ti and heating and melting the same; And a step of pulverizing the vitrified material, a step of mixing all the raw material compounds and the binder including the pulverized material ,
A step of molding the obtained mixture, and
Baking at a temperature of 900 ° C. or less , wherein each of the raw material compounds has the formula:
r) O-bSiO 2 -cZrO 2 - (d / 2) Al 2
O 3 -eTiO 2 A method for producing a dielectric porcelain composition, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4025661A JP2865925B2 (en) | 1992-01-16 | 1992-01-16 | Method for producing dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4025661A JP2865925B2 (en) | 1992-01-16 | 1992-01-16 | Method for producing dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05190020A JPH05190020A (en) | 1993-07-30 |
| JP2865925B2 true JP2865925B2 (en) | 1999-03-08 |
Family
ID=12171991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4025661A Expired - Fee Related JP2865925B2 (en) | 1992-01-16 | 1992-01-16 | Method for producing dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2865925B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6997985B1 (en) * | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
| EP0612102B1 (en) * | 1993-02-15 | 2001-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Process for the fabrication of a crystallised semiconductor layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01102808A (en) * | 1987-10-14 | 1989-04-20 | Murata Mfg Co Ltd | Dielectric porcelain compound for temperature compensation |
-
1992
- 1992-01-16 JP JP4025661A patent/JP2865925B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05190020A (en) | 1993-07-30 |
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