JPH0580836B2 - - Google Patents

Info

Publication number
JPH0580836B2
JPH0580836B2 JP543585A JP543585A JPH0580836B2 JP H0580836 B2 JPH0580836 B2 JP H0580836B2 JP 543585 A JP543585 A JP 543585A JP 543585 A JP543585 A JP 543585A JP H0580836 B2 JPH0580836 B2 JP H0580836B2
Authority
JP
Japan
Prior art keywords
layer
growth
active layer
manufacturing
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP543585A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61164285A (ja
Inventor
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP543585A priority Critical patent/JPS61164285A/ja
Publication of JPS61164285A publication Critical patent/JPS61164285A/ja
Publication of JPH0580836B2 publication Critical patent/JPH0580836B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP543585A 1985-01-16 1985-01-16 埋め込み構造半導体レ−ザの製造方法 Granted JPS61164285A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP543585A JPS61164285A (ja) 1985-01-16 1985-01-16 埋め込み構造半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP543585A JPS61164285A (ja) 1985-01-16 1985-01-16 埋め込み構造半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS61164285A JPS61164285A (ja) 1986-07-24
JPH0580836B2 true JPH0580836B2 (enrdf_load_stackoverflow) 1993-11-10

Family

ID=11611115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP543585A Granted JPS61164285A (ja) 1985-01-16 1985-01-16 埋め込み構造半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS61164285A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS61164285A (ja) 1986-07-24

Similar Documents

Publication Publication Date Title
US5065402A (en) Transverse-mode stabilized laser diode
JPH0750445A (ja) 半導体レーザの製法
JPS6220392A (ja) 半導体レ−ザ素子
JPS62257783A (ja) 半導体レ−ザ素子
JP2629678B2 (ja) 半導体レーザ装置およびその製造方法
JPH05211372A (ja) 半導体レーザの製造方法
JP3108183B2 (ja) 半導体レーザ素子とその製造方法
JPH02116187A (ja) 半導体レーザ
JPH0580836B2 (enrdf_load_stackoverflow)
JP3523432B2 (ja) 半導体レーザ装置の製造方法
JP2523643B2 (ja) 半導体レ−ザ装置
JP2944312B2 (ja) 半導体レーザ素子の製造方法
JPH0437598B2 (enrdf_load_stackoverflow)
JPH06196812A (ja) 半導体レーザ素子
JPH0629618A (ja) マルチビーム半導体レーザ及びその製造方法
JP3078553B2 (ja) 半導体レーザ装置及びその製造方法
JPH0682886B2 (ja) 半導体レーザ装置の製造方法
JP2554192B2 (ja) 半導体レーザの製造方法
JP3143105B2 (ja) 半導体レーザ素子の製造方法
JP2973215B2 (ja) 半導体レーザ装置
JP2611486B2 (ja) 半導体レーザおよびその製造方法
JPH0770779B2 (ja) 半導体レーザの製造方法
JPH03185889A (ja) 半導体レーザ素子およびその製造方法
JP3081363B2 (ja) 赤色半導体レーザ
JPH0766992B2 (ja) AlGaInP系半導体レーザとその製造方法