JPH0575174B2 - - Google Patents

Info

Publication number
JPH0575174B2
JPH0575174B2 JP61216486A JP21648686A JPH0575174B2 JP H0575174 B2 JPH0575174 B2 JP H0575174B2 JP 61216486 A JP61216486 A JP 61216486A JP 21648686 A JP21648686 A JP 21648686A JP H0575174 B2 JPH0575174 B2 JP H0575174B2
Authority
JP
Japan
Prior art keywords
insulating film
gate electrode
film
forming
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61216486A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6370572A (ja
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61216486A priority Critical patent/JPS6370572A/ja
Publication of JPS6370572A publication Critical patent/JPS6370572A/ja
Publication of JPH0575174B2 publication Critical patent/JPH0575174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP61216486A 1986-09-12 1986-09-12 Ｍｏｓ電界効果トランジスタの製造方法 Granted JPS6370572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61216486A JPS6370572A (ja) 1986-09-12 1986-09-12 Ｍｏｓ電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61216486A JPS6370572A (ja) 1986-09-12 1986-09-12 Ｍｏｓ電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6370572A JPS6370572A (ja) 1988-03-30
JPH0575174B2 true JPH0575174B2 (cs) 1993-10-20

Family

ID=16689183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61216486A Granted JPS6370572A (ja) 1986-09-12 1986-09-12 Ｍｏｓ電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6370572A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6410383B1 (en) * 2000-03-16 2002-06-25 Sharp Laboratories Of America, Inc. Method of forming conducting diffusion barriers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419810A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Self-aligned field effect transistor process
NL8105920A (nl) * 1981-12-31 1983-07-18 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.

Also Published As

Publication number Publication date
JPS6370572A (ja) 1988-03-30

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