JPH0574828B2 - - Google Patents
Info
- Publication number
- JPH0574828B2 JPH0574828B2 JP60015004A JP1500485A JPH0574828B2 JP H0574828 B2 JPH0574828 B2 JP H0574828B2 JP 60015004 A JP60015004 A JP 60015004A JP 1500485 A JP1500485 A JP 1500485A JP H0574828 B2 JPH0574828 B2 JP H0574828B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- liquid crystal
- thin film
- conductive thin
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 61
- 239000004973 liquid crystal related substance Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229910004304 SiNy Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60015004A JPS61174589A (ja) | 1985-01-29 | 1985-01-29 | 液晶表示装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60015004A JPS61174589A (ja) | 1985-01-29 | 1985-01-29 | 液晶表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61174589A JPS61174589A (ja) | 1986-08-06 |
| JPH0574828B2 true JPH0574828B2 (de) | 1993-10-19 |
Family
ID=11876748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60015004A Granted JPS61174589A (ja) | 1985-01-29 | 1985-01-29 | 液晶表示装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61174589A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0497824U (de) * | 1991-01-10 | 1992-08-25 | ||
| EP2128901A4 (de) * | 2007-03-22 | 2013-01-09 | Panasonic Corp | Speicherelement und speichereinrichtung |
| US8422268B2 (en) | 2008-07-11 | 2013-04-16 | Panasonic Corporation | Current control element, memory element, and fabrication method thereof |
| WO2010032470A1 (ja) | 2008-09-19 | 2010-03-25 | パナソニック株式会社 | 電流抑制素子、記憶素子、記憶装置および電流抑制素子の製造方法 |
-
1985
- 1985-01-29 JP JP60015004A patent/JPS61174589A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61174589A (ja) | 1986-08-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |