JPH0573051B2 - - Google Patents

Info

Publication number
JPH0573051B2
JPH0573051B2 JP60029072A JP2907285A JPH0573051B2 JP H0573051 B2 JPH0573051 B2 JP H0573051B2 JP 60029072 A JP60029072 A JP 60029072A JP 2907285 A JP2907285 A JP 2907285A JP H0573051 B2 JPH0573051 B2 JP H0573051B2
Authority
JP
Japan
Prior art keywords
plasma
magnetic field
etching
processed
rotating magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60029072A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61187336A (ja
Inventor
Akira Chiba
Kyoshi Sakagami
Hideaki Itakura
Shigeki Sadahiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2907285A priority Critical patent/JPS61187336A/ja
Publication of JPS61187336A publication Critical patent/JPS61187336A/ja
Publication of JPH0573051B2 publication Critical patent/JPH0573051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP2907285A 1985-02-15 1985-02-15 プラズマエッチング装置とエッチング方法 Granted JPS61187336A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2907285A JPS61187336A (ja) 1985-02-15 1985-02-15 プラズマエッチング装置とエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2907285A JPS61187336A (ja) 1985-02-15 1985-02-15 プラズマエッチング装置とエッチング方法

Publications (2)

Publication Number Publication Date
JPS61187336A JPS61187336A (ja) 1986-08-21
JPH0573051B2 true JPH0573051B2 (id) 1993-10-13

Family

ID=12266149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2907285A Granted JPS61187336A (ja) 1985-02-15 1985-02-15 プラズマエッチング装置とエッチング方法

Country Status (1)

Country Link
JP (1) JPS61187336A (id)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224231A (ja) * 1987-03-12 1988-09-19 Fujitsu Ltd エツチング装置
JPH0686670B2 (ja) * 1987-04-13 1994-11-02 日電アネルバ株式会社 放電化学反応装置
JPH0718025B2 (ja) * 1987-05-08 1995-03-01 日電アネルバ株式会社 放電化学反応装置の回転磁界発生装置
JP3170319B2 (ja) * 1991-08-20 2001-05-28 東京エレクトロン株式会社 マグネトロンプラズマ処理装置
US5660744A (en) * 1992-03-26 1997-08-26 Kabushiki Kaisha Toshiba Plasma generating apparatus and surface processing apparatus
US5444207A (en) * 1992-03-26 1995-08-22 Kabushiki Kaisha Toshiba Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
CN1067118C (zh) * 1994-07-08 2001-06-13 松下电器产业株式会社 磁控管溅射装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918638A (ja) * 1982-07-22 1984-01-31 Toshiba Corp ドライエツチング装置
JPS59139629A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd プラズマドライ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918638A (ja) * 1982-07-22 1984-01-31 Toshiba Corp ドライエツチング装置
JPS59139629A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd プラズマドライ処理装置

Also Published As

Publication number Publication date
JPS61187336A (ja) 1986-08-21

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