JPH0571557B2 - - Google Patents
Info
- Publication number
- JPH0571557B2 JPH0571557B2 JP12678089A JP12678089A JPH0571557B2 JP H0571557 B2 JPH0571557 B2 JP H0571557B2 JP 12678089 A JP12678089 A JP 12678089A JP 12678089 A JP12678089 A JP 12678089A JP H0571557 B2 JPH0571557 B2 JP H0571557B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- liquid phase
- heterostructure
- epitaxial growth
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 239000002994 raw material Substances 0.000 claims description 20
- 230000012010 growth Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 239000007791 liquid phase Substances 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 8
- 238000005253 cladding Methods 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12678089A JPH02307889A (ja) | 1989-05-22 | 1989-05-22 | 液相エピタキシャル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12678089A JPH02307889A (ja) | 1989-05-22 | 1989-05-22 | 液相エピタキシャル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02307889A JPH02307889A (ja) | 1990-12-21 |
| JPH0571557B2 true JPH0571557B2 (OSRAM) | 1993-10-07 |
Family
ID=14943750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12678089A Granted JPH02307889A (ja) | 1989-05-22 | 1989-05-22 | 液相エピタキシャル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02307889A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2693032B2 (ja) * | 1990-10-16 | 1997-12-17 | キヤノン株式会社 | 半導体層の形成方法及びこれを用いる太陽電池の製造方法 |
| JP2543791B2 (ja) * | 1991-06-30 | 1996-10-16 | 信越半導体株式会社 | 液相エピタキシャル成長法 |
-
1989
- 1989-05-22 JP JP12678089A patent/JPH02307889A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02307889A (ja) | 1990-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |