JPH0570947B2 - - Google Patents
Info
- Publication number
- JPH0570947B2 JPH0570947B2 JP58193673A JP19367383A JPH0570947B2 JP H0570947 B2 JPH0570947 B2 JP H0570947B2 JP 58193673 A JP58193673 A JP 58193673A JP 19367383 A JP19367383 A JP 19367383A JP H0570947 B2 JPH0570947 B2 JP H0570947B2
- Authority
- JP
- Japan
- Prior art keywords
- register
- transfer
- layer
- signal charge
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 47
- 239000012535 impurity Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58193673A JPS6085559A (ja) | 1983-10-17 | 1983-10-17 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58193673A JPS6085559A (ja) | 1983-10-17 | 1983-10-17 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6085559A JPS6085559A (ja) | 1985-05-15 |
| JPH0570947B2 true JPH0570947B2 (ko) | 1993-10-06 |
Family
ID=16311876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58193673A Granted JPS6085559A (ja) | 1983-10-17 | 1983-10-17 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6085559A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758770B2 (ja) * | 1986-01-21 | 1995-06-21 | 日本電気株式会社 | 固体撮像装置 |
-
1983
- 1983-10-17 JP JP58193673A patent/JPS6085559A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6085559A (ja) | 1985-05-15 |
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