JPH0569080B2 - - Google Patents

Info

Publication number
JPH0569080B2
JPH0569080B2 JP62213141A JP21314187A JPH0569080B2 JP H0569080 B2 JPH0569080 B2 JP H0569080B2 JP 62213141 A JP62213141 A JP 62213141A JP 21314187 A JP21314187 A JP 21314187A JP H0569080 B2 JPH0569080 B2 JP H0569080B2
Authority
JP
Japan
Prior art keywords
crucible
substrate
melt
liquid phase
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62213141A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6456396A (en
Inventor
Takemasa Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP21314187A priority Critical patent/JPS6456396A/ja
Publication of JPS6456396A publication Critical patent/JPS6456396A/ja
Publication of JPH0569080B2 publication Critical patent/JPH0569080B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP21314187A 1987-08-28 1987-08-28 Liquid phase epitaxial growth method Granted JPS6456396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21314187A JPS6456396A (en) 1987-08-28 1987-08-28 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21314187A JPS6456396A (en) 1987-08-28 1987-08-28 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS6456396A JPS6456396A (en) 1989-03-03
JPH0569080B2 true JPH0569080B2 (enExample) 1993-09-30

Family

ID=16634255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21314187A Granted JPS6456396A (en) 1987-08-28 1987-08-28 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS6456396A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186079A (en) * 1975-01-27 1976-07-28 Hitachi Ltd Ekisoseichohoho oyobi sochi

Also Published As

Publication number Publication date
JPS6456396A (en) 1989-03-03

Similar Documents

Publication Publication Date Title
US4293371A (en) Method of making magnetic film-substrate composites
JPH0569080B2 (enExample)
Shick et al. Liquid‐Phase Homoepitaxial Growth of Rare‐Earth Orthoferrites
Blank et al. Single Crystal Growth of Yttrium Orthoferrite by a Seeded Bridgman Technique
JPH10338594A (ja) 引き上げ法による単結晶育成装置
JPS5812228B2 (ja) 結晶育成装置と結晶成長方法
JPS63144189A (ja) 液相エピタキシヤル成長装置
JPS6360195A (ja) 液晶エピタキシヤル成長方法
JPS61202411A (ja) 液相エピタキシヤル成長法
JPH05330979A (ja) 液相エピタキシャル成長装置
JPH01230498A (ja) ガーネット膜の形成方法
JPH0556319B2 (enExample)
JP3806966B2 (ja) 磁性ガーネット単結晶の製造方法
JPS61174192A (ja) 結晶成長方法
JPH06316485A (ja) 液相エピタキシャル成長法
JPS62275089A (ja) 結晶成長法
JPS61151090A (ja) ガ−ネツト膜の結晶成長方法
JPH068239B2 (ja) 液相エピタキシヤル育成法
JPH11171690A (ja) 酸化物単結晶育成用ホルダー
JPH08253394A (ja) ビスマス置換希土類鉄ガーネット単結晶育成用の液相エピタキシャル装置
JPH03109288A (ja) ガーネット厚膜の育成方法
JPH05229893A (ja) 液相エピタキシャル成長装置
JPS63233094A (ja) 液相エピタキシヤル育成方法
JPH06157189A (ja) 単結晶育成装置
JPS63117998A (ja) ビスマスガ−ネツト厚膜育成法