JPH0568097B2 - - Google Patents
Info
- Publication number
- JPH0568097B2 JPH0568097B2 JP58145264A JP14526483A JPH0568097B2 JP H0568097 B2 JPH0568097 B2 JP H0568097B2 JP 58145264 A JP58145264 A JP 58145264A JP 14526483 A JP14526483 A JP 14526483A JP H0568097 B2 JPH0568097 B2 JP H0568097B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- plasma
- present
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58145264A JPS6037118A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58145264A JPS6037118A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5134140A Division JP2564753B2 (ja) | 1993-05-13 | 1993-05-13 | プラズマ気相反応方法 |
| JP6284147A Division JP2816943B2 (ja) | 1994-10-25 | 1994-10-25 | プラズマ気相反応方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6037118A JPS6037118A (ja) | 1985-02-26 |
| JPH0568097B2 true JPH0568097B2 (enrdf_load_stackoverflow) | 1993-09-28 |
Family
ID=15381105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58145264A Granted JPS6037118A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6037118A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037119A (ja) * | 1983-08-08 | 1985-02-26 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置 |
| US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
| JP2523070B2 (ja) * | 1991-11-22 | 1996-08-07 | 株式会社半導体エネルギー研究所 | プラズマ処理装置 |
| JP2564753B2 (ja) * | 1993-05-13 | 1996-12-18 | 株式会社 半導体エネルギー研究所 | プラズマ気相反応方法 |
| KR20110021654A (ko) | 2009-08-25 | 2011-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 미결정 반도체막의 제조방법, 및 반도체장치의 제조방법 |
| US9177761B2 (en) | 2009-08-25 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| JPS5842226A (ja) * | 1981-09-07 | 1983-03-11 | Nec Corp | プラズマ半導体製造装置 |
-
1983
- 1983-08-08 JP JP58145264A patent/JPS6037118A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6037118A (ja) | 1985-02-26 |
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