JPH0562736B2 - - Google Patents
Info
- Publication number
- JPH0562736B2 JPH0562736B2 JP7374885A JP7374885A JPH0562736B2 JP H0562736 B2 JPH0562736 B2 JP H0562736B2 JP 7374885 A JP7374885 A JP 7374885A JP 7374885 A JP7374885 A JP 7374885A JP H0562736 B2 JPH0562736 B2 JP H0562736B2
- Authority
- JP
- Japan
- Prior art keywords
- developer
- present
- exposed
- weight
- quaternary ammonium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 18
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 claims description 8
- 239000002075 main ingredient Substances 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 239000010408 film Substances 0.000 description 19
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000004090 dissolution Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 4
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- IPILPUZVTYHGIL-UHFFFAOYSA-M tributyl(methyl)azanium;chloride Chemical compound [Cl-].CCCC[N+](C)(CCCC)CCCC IPILPUZVTYHGIL-UHFFFAOYSA-M 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 241000196224 Codium Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- UARUINOVQHEYKN-UHFFFAOYSA-M methyl(tripropyl)azanium;iodide Chemical compound [I-].CCC[N+](C)(CCC)CCC UARUINOVQHEYKN-UHFFFAOYSA-M 0.000 description 1
- -1 naphthoquinone diazide compound Chemical class 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- GJSGYPDDPQRWPK-UHFFFAOYSA-N tetrapentylammonium Chemical compound CCCCC[N+](CCCCC)(CCCCC)CCCCC GJSGYPDDPQRWPK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7374885A JPS61232454A (ja) | 1985-04-08 | 1985-04-08 | ポジ型ホトレジスト用現像液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7374885A JPS61232454A (ja) | 1985-04-08 | 1985-04-08 | ポジ型ホトレジスト用現像液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61232454A JPS61232454A (ja) | 1986-10-16 |
| JPH0562736B2 true JPH0562736B2 (enrdf_load_stackoverflow) | 1993-09-09 |
Family
ID=13527177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7374885A Granted JPS61232454A (ja) | 1985-04-08 | 1985-04-08 | ポジ型ホトレジスト用現像液 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61232454A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2543348B2 (ja) * | 1986-07-30 | 1996-10-16 | 住友化学工業株式会社 | ポジ形レジスト用現像液 |
| JP4080784B2 (ja) | 2002-04-26 | 2008-04-23 | 東京応化工業株式会社 | レジスト用現像液及びそれを用いたレジストパターン形成方法、並びにレジスト用現像原液 |
-
1985
- 1985-04-08 JP JP7374885A patent/JPS61232454A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61232454A (ja) | 1986-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0186184B1 (en) | Positive resist developer and method of developing positive resist | |
| JPH0638159B2 (ja) | ポジ型ホトレジスト用現像液 | |
| JPH0451020B2 (enrdf_load_stackoverflow) | ||
| JP3426055B2 (ja) | フォトレジスト層用の現像剤 | |
| EP0062733B1 (en) | Metal ion-free photoresist developer composition | |
| JPS59219743A (ja) | ポジ型レジスト現像液 | |
| US4628023A (en) | Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant | |
| EP0394353A1 (en) | Aqueous developing solution and its use in developing positive-working photoresist composition | |
| JPH0815859A (ja) | レジスト用塗布液およびこれを用いたレジスト材料 | |
| JP2589408B2 (ja) | レジスト用現像液組成物 | |
| JP4040544B2 (ja) | レジスト用現像液組成物およびレジストパターンの形成方法 | |
| JPH0562736B2 (enrdf_load_stackoverflow) | ||
| JPS61232453A (ja) | 改良されたポジ型ホトレジスト用現像液 | |
| JP2527172B2 (ja) | ポジ型ホトレジスト用現像液 | |
| JPH0210348A (ja) | ポジ型感光性組成物及びレジストパターンの形成方法 | |
| JP3127933B2 (ja) | ポジ型フォトレジスト現像液 | |
| JPH0638160B2 (ja) | ポジ型ホトレジストのスカム除去剤 | |
| JPH0567028B2 (enrdf_load_stackoverflow) | ||
| JP2712397B2 (ja) | ポジ型フォトレジスト現像液 | |
| JPH05341516A (ja) | ポジ型レジスト組成物 | |
| JPH1124285A (ja) | レジスト用現像液 | |
| JPH02222955A (ja) | ポジ型感光性組成物 | |
| JPH0650395B2 (ja) | ポジ型ホトレジスト用組成物 | |
| JPH049956A (ja) | ポジ型フォトレジスト用現像液組成物 | |
| JPH0638161B2 (ja) | レジストパタ−ンの形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |