JPS61232454A - ポジ型ホトレジスト用現像液 - Google Patents
ポジ型ホトレジスト用現像液Info
- Publication number
- JPS61232454A JPS61232454A JP7374885A JP7374885A JPS61232454A JP S61232454 A JPS61232454 A JP S61232454A JP 7374885 A JP7374885 A JP 7374885A JP 7374885 A JP7374885 A JP 7374885A JP S61232454 A JPS61232454 A JP S61232454A
- Authority
- JP
- Japan
- Prior art keywords
- developer
- positive type
- type photoresist
- positive
- quaternary ammonium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 26
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 11
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 5
- 125000005843 halogen group Chemical group 0.000 claims abstract description 3
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims description 11
- 150000007530 organic bases Chemical group 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 239000002075 main ingredient Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- WAFZILQCZPETQZ-UHFFFAOYSA-L [OH-].OC[N+](CCO)(C)C.C[N+](C)(C)C.[OH-] Chemical group [OH-].OC[N+](CCO)(C)C.C[N+](C)(C)C.[OH-] WAFZILQCZPETQZ-UHFFFAOYSA-L 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract description 3
- 239000000654 additive Substances 0.000 abstract description 2
- 239000003381 stabilizer Substances 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 239000003906 humectant Substances 0.000 abstract 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 230000003381 solubilizing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000011161 development Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000004090 dissolution Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- -1 naphthoquinone diazide compound Chemical class 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- IPILPUZVTYHGIL-UHFFFAOYSA-M tributyl(methyl)azanium;chloride Chemical compound [Cl-].CCCC[N+](C)(CCCC)CCCC IPILPUZVTYHGIL-UHFFFAOYSA-M 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- JZQLRTAGAUZWRH-UHFFFAOYSA-N 2-aminoethanol;hydrate Chemical compound [OH-].[NH3+]CCO JZQLRTAGAUZWRH-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- QZHXKQKKEBXYRG-UHFFFAOYSA-N 4-n-(4-aminophenyl)benzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1NC1=CC=C(N)C=C1 QZHXKQKKEBXYRG-UHFFFAOYSA-N 0.000 description 1
- 101100152879 Arabidopsis thaliana CYP708A2 gene Proteins 0.000 description 1
- GULNIHOSWFYMRN-UHFFFAOYSA-N N'-[(4-methoxyphenyl)methyl]-N,N-dimethyl-N'-(2-pyrimidinyl)ethane-1,2-diamine Chemical compound C1=CC(OC)=CC=C1CN(CCN(C)C)C1=NC=CC=N1 GULNIHOSWFYMRN-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229940083124 ganglion-blocking antiadrenergic secondary and tertiary amines Drugs 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Chemical group 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Chemical group 0.000 description 1
- 239000011593 sulfur Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- GJSGYPDDPQRWPK-UHFFFAOYSA-N tetrapentylammonium Chemical compound CCCCC[N+](CCCCC)(CCCCC)CCCCC GJSGYPDDPQRWPK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7374885A JPS61232454A (ja) | 1985-04-08 | 1985-04-08 | ポジ型ホトレジスト用現像液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7374885A JPS61232454A (ja) | 1985-04-08 | 1985-04-08 | ポジ型ホトレジスト用現像液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61232454A true JPS61232454A (ja) | 1986-10-16 |
| JPH0562736B2 JPH0562736B2 (enrdf_load_stackoverflow) | 1993-09-09 |
Family
ID=13527177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7374885A Granted JPS61232454A (ja) | 1985-04-08 | 1985-04-08 | ポジ型ホトレジスト用現像液 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61232454A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6334542A (ja) * | 1986-07-30 | 1988-02-15 | Sumitomo Chem Co Ltd | ポジ形レジスト用現像液 |
| US7407739B2 (en) | 2002-04-26 | 2008-08-05 | Tokyo Ohka Kogyo Co., Ltd. | Resist developer and resist pattern formation method using same |
-
1985
- 1985-04-08 JP JP7374885A patent/JPS61232454A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6334542A (ja) * | 1986-07-30 | 1988-02-15 | Sumitomo Chem Co Ltd | ポジ形レジスト用現像液 |
| US7407739B2 (en) | 2002-04-26 | 2008-08-05 | Tokyo Ohka Kogyo Co., Ltd. | Resist developer and resist pattern formation method using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0562736B2 (enrdf_load_stackoverflow) | 1993-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0186184B1 (en) | Positive resist developer and method of developing positive resist | |
| JPH0638159B2 (ja) | ポジ型ホトレジスト用現像液 | |
| JPH0451020B2 (enrdf_load_stackoverflow) | ||
| EP0062733B1 (en) | Metal ion-free photoresist developer composition | |
| US4628023A (en) | Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant | |
| EP0024916B1 (en) | Improved positive-working resist materials and their use in a formation of a negative resist pattern on a substrate | |
| JP3426055B2 (ja) | フォトレジスト層用の現像剤 | |
| JPS6197653A (ja) | 高コントラストのポジのホトレジストの現像法 | |
| CN101657761A (zh) | 光刻胶显影液 | |
| JPS59219743A (ja) | ポジ型レジスト現像液 | |
| EP0231028A2 (en) | High contrast low metal ion photoresist developing method and composition | |
| US7846640B2 (en) | Developer composition for resists and method for formation of resist pattern | |
| JP2589408B2 (ja) | レジスト用現像液組成物 | |
| JPS61232454A (ja) | ポジ型ホトレジスト用現像液 | |
| JP3008468B2 (ja) | 感光性組成物、及び該感光性組成物を用いたパターン形成方法及び半導体の製造方法 | |
| JPS61232453A (ja) | 改良されたポジ型ホトレジスト用現像液 | |
| JP2527172B2 (ja) | ポジ型ホトレジスト用現像液 | |
| KR910007227B1 (ko) | 포지티브-워킹 레지스트조성물용 현상액 | |
| JP3392728B2 (ja) | パターン形成方法 | |
| JPH0567028B2 (enrdf_load_stackoverflow) | ||
| JPH05323590A (ja) | 化学増幅型レジスト組成物 | |
| JPS5962850A (ja) | フオトレジストの現像組成物および現像法 | |
| JPS62251745A (ja) | ポジ型フォトレジスト用現像液 | |
| JPH05341516A (ja) | ポジ型レジスト組成物 | |
| JPS62196656A (ja) | ポジ型ホトレジストのスカム除去剤 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |