JPH0559064B2 - - Google Patents
Info
- Publication number
- JPH0559064B2 JPH0559064B2 JP59245099A JP24509984A JPH0559064B2 JP H0559064 B2 JPH0559064 B2 JP H0559064B2 JP 59245099 A JP59245099 A JP 59245099A JP 24509984 A JP24509984 A JP 24509984A JP H0559064 B2 JPH0559064 B2 JP H0559064B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- oxide
- present
- resistance value
- zro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 description 7
- 239000011029 spinel Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019580 Cr Zr Inorganic materials 0.000 description 2
- 229910019817 Cr—Zr Inorganic materials 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910018651 Mn—Ni Inorganic materials 0.000 description 1
- 229910003310 Ni-Al Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011802 pulverized particle Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
- Conductive Materials (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59245099A JPS61122156A (ja) | 1984-11-20 | 1984-11-20 | サ−ミスタ用酸化物半導体の製造方法 |
| EP85905664A EP0207994B1 (en) | 1984-11-08 | 1985-11-06 | Oxide semiconductor for thermistor and a method of producing the same |
| PCT/JP1985/000616 WO1986003051A1 (en) | 1984-11-08 | 1985-11-06 | Oxide semiconductor for thermistor and a method of producing the same |
| DE8585905664T DE3581807D1 (de) | 1984-11-08 | 1985-11-06 | Halbleiteroxyd fuer thermistor und dessen herstellung. |
| US06/902,445 US4891158A (en) | 1984-11-08 | 1985-11-06 | Oxide semiconductor for thermistor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59245099A JPS61122156A (ja) | 1984-11-20 | 1984-11-20 | サ−ミスタ用酸化物半導体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61122156A JPS61122156A (ja) | 1986-06-10 |
| JPH0559064B2 true JPH0559064B2 (en。) | 1993-08-30 |
Family
ID=17128592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59245099A Granted JPS61122156A (ja) | 1984-11-08 | 1984-11-20 | サ−ミスタ用酸化物半導体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61122156A (en。) |
-
1984
- 1984-11-20 JP JP59245099A patent/JPS61122156A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61122156A (ja) | 1986-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0207994B1 (en) | Oxide semiconductor for thermistor and a method of producing the same | |
| JPH0799103A (ja) | サーミスタ用磁器組成物およびサーミスタ素子 | |
| EP0149681B1 (en) | Oxide semiconductor for thermistor | |
| JPH0559064B2 (en。) | ||
| WO2004046061A1 (ja) | サーミスタ素子用焼結体及びその製造方法、並びにサーミスタ素子、温度センサ | |
| JPH0578921B2 (en。) | ||
| JPS6097601A (ja) | サーミスタ用酸化物半導体磁器の製造方法 | |
| JPH0543161B2 (en。) | ||
| JPH0578922B2 (en。) | ||
| JPS61113205A (ja) | サ−ミスタ用酸化物半導体の製造方法 | |
| JPS61113206A (ja) | サ−ミスタ用酸化物半導体の製造方法 | |
| JPS6252922B2 (en。) | ||
| JPS61113204A (ja) | サ−ミスタ用酸化物半導体の製造方法 | |
| JPH043644B2 (en。) | ||
| JPS61113210A (ja) | サ−ミスタ用酸化物半導体の製造方法 | |
| JPS6196702A (ja) | サ−ミスタ用酸化物半導体磁器の製造方法 | |
| JPS62108504A (ja) | サ−ミスタ用酸化物半導体 | |
| JPS61113208A (ja) | サ−ミスタ用酸化物半導体の製造方法 | |
| JPS62108505A (ja) | サ−ミスタ用酸化物半導体 | |
| JPS61168205A (ja) | サ−ミスタ用酸化物半導体の製造方法 | |
| JPH0773081B2 (ja) | サ−ミスタ用酸化物半導体磁器の製造方法 | |
| JPS62108503A (ja) | サ−ミスタ用酸化物半導体 | |
| JPH043643B2 (en。) | ||
| JPS61168204A (ja) | サ−ミスタ用酸化物半導体の製造方法 | |
| JPS62108502A (ja) | サ−ミスタ用酸化物半導体 |