JPH0558275B2 - - Google Patents
Info
- Publication number
- JPH0558275B2 JPH0558275B2 JP19804784A JP19804784A JPH0558275B2 JP H0558275 B2 JPH0558275 B2 JP H0558275B2 JP 19804784 A JP19804784 A JP 19804784A JP 19804784 A JP19804784 A JP 19804784A JP H0558275 B2 JPH0558275 B2 JP H0558275B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- current
- gaas layer
- alzga
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 65
- 238000005253 cladding Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 86
- 239000000758 substrate Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59198047A JPS6177384A (ja) | 1984-09-21 | 1984-09-21 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59198047A JPS6177384A (ja) | 1984-09-21 | 1984-09-21 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6177384A JPS6177384A (ja) | 1986-04-19 |
| JPH0558275B2 true JPH0558275B2 (enrdf_load_stackoverflow) | 1993-08-26 |
Family
ID=16384647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59198047A Granted JPS6177384A (ja) | 1984-09-21 | 1984-09-21 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6177384A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3000653U (ja) * | 1994-02-01 | 1994-08-09 | 田渕商事株式会社 | かばん |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63104493A (ja) * | 1986-10-22 | 1988-05-09 | Nec Corp | 半導体レ−ザ素子 |
| JP2564813B2 (ja) * | 1987-01-21 | 1996-12-18 | 日本電気株式会社 | Ａ▲ｌ▼ＧａＩｎＰ半導体発光素子 |
| JPS63236385A (ja) * | 1987-03-25 | 1988-10-03 | Hitachi Ltd | 半導体発光素子 |
| JPH02116187A (ja) * | 1988-10-25 | 1990-04-27 | Nec Corp | 半導体レーザ |
| JPH07112093B2 (ja) * | 1990-01-12 | 1995-11-29 | 松下電器産業株式会社 | 半導体レーザおよびその製造方法 |
| US6737288B2 (en) | 2001-05-24 | 2004-05-18 | Mitsubishi Denki Kabushiki Kaisha | Method for fabricating a semiconductor device |
-
1984
- 1984-09-21 JP JP59198047A patent/JPS6177384A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3000653U (ja) * | 1994-02-01 | 1994-08-09 | 田渕商事株式会社 | かばん |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6177384A (ja) | 1986-04-19 |
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