JPH0556675B2 - - Google Patents
Info
- Publication number
- JPH0556675B2 JPH0556675B2 JP16171784A JP16171784A JPH0556675B2 JP H0556675 B2 JPH0556675 B2 JP H0556675B2 JP 16171784 A JP16171784 A JP 16171784A JP 16171784 A JP16171784 A JP 16171784A JP H0556675 B2 JPH0556675 B2 JP H0556675B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- gaas
- cavity surface
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000003486 chemical etching Methods 0.000 claims description 13
- 238000005253 cladding Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000003776 cleavage reaction Methods 0.000 description 7
- 230000007017 scission Effects 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Weting (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16171784A JPS6140078A (ja) | 1984-07-31 | 1984-07-31 | 半導体レ−ザ装置の製造方法 |
| CA000487734A CA1247947A (en) | 1984-07-31 | 1985-07-30 | Method of manufacturing semiconductor device |
| US06/761,023 US4675074A (en) | 1984-07-31 | 1985-07-31 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16171784A JPS6140078A (ja) | 1984-07-31 | 1984-07-31 | 半導体レ−ザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6140078A JPS6140078A (ja) | 1986-02-26 |
| JPH0556675B2 true JPH0556675B2 (enrdf_load_stackoverflow) | 1993-08-20 |
Family
ID=15740538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16171784A Granted JPS6140078A (ja) | 1984-07-31 | 1984-07-31 | 半導体レ−ザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6140078A (enrdf_load_stackoverflow) |
-
1984
- 1984-07-31 JP JP16171784A patent/JPS6140078A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6140078A (ja) | 1986-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4675074A (en) | Method of manufacturing semiconductor device | |
| JP2958084B2 (ja) | メサ型半導体基体の製造方法 | |
| US4661961A (en) | Buried heterostructure devices with unique contact-facilitating layers | |
| EP0076761B1 (en) | Semiconductor lasers and method for producing the same | |
| US4865684A (en) | Process for producing a semiconductor laser mirror by ionic machining | |
| JPH0556675B2 (enrdf_load_stackoverflow) | ||
| US4523318A (en) | Semiconductor laser having high manufacturing yield | |
| JPH0584075B2 (enrdf_load_stackoverflow) | ||
| JP3108183B2 (ja) | 半導体レーザ素子とその製造方法 | |
| JPH067622B2 (ja) | 半導体レ−ザ装置の製造方法 | |
| US4461008A (en) | Terraced heterostructure semiconductor laser | |
| JPS6142186A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPH07312462A (ja) | 面発光レーザダイオードの製造方法，及び面発光レーザダイオード | |
| US4097819A (en) | Semiconductor laser | |
| JPS6142185A (ja) | 半導体レ−ザ装置の製造方法 | |
| US4393504A (en) | High power semiconductor laser | |
| JPS6085586A (ja) | 半導体レ−ザ−の製法 | |
| JPS6184888A (ja) | 埋込みヘテロ型半導体レ−ザ | |
| JPH10173289A (ja) | 半導体装置の製造方法 | |
| JPS6344311B2 (enrdf_load_stackoverflow) | ||
| JPS6142184A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPH11274657A (ja) | 半導体レ―ザ及びその製造方法 | |
| JPH01100985A (ja) | 半導体レーザ | |
| JPS6140079A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPH0661582A (ja) | 半導体レーザ装置の製造方法 |