JPH0584075B2 - - Google Patents

Info

Publication number
JPH0584075B2
JPH0584075B2 JP6937184A JP6937184A JPH0584075B2 JP H0584075 B2 JPH0584075 B2 JP H0584075B2 JP 6937184 A JP6937184 A JP 6937184A JP 6937184 A JP6937184 A JP 6937184A JP H0584075 B2 JPH0584075 B2 JP H0584075B2
Authority
JP
Japan
Prior art keywords
layer
etching
cavity surface
gaas
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP6937184A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60213073A (ja
Inventor
Masaru Wada
Kunio Ito
Takeshi Hamada
Juichi Shimizu
Takashi Sugino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6937184A priority Critical patent/JPS60213073A/ja
Publication of JPS60213073A publication Critical patent/JPS60213073A/ja
Publication of JPH0584075B2 publication Critical patent/JPH0584075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching

Landscapes

  • Weting (AREA)
  • Semiconductor Lasers (AREA)
JP6937184A 1984-04-06 1984-04-06 半導体レ−ザ装置の製造方法 Granted JPS60213073A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6937184A JPS60213073A (ja) 1984-04-06 1984-04-06 半導体レ−ザ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6937184A JPS60213073A (ja) 1984-04-06 1984-04-06 半導体レ−ザ装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60213073A JPS60213073A (ja) 1985-10-25
JPH0584075B2 true JPH0584075B2 (enrdf_load_stackoverflow) 1993-11-30

Family

ID=13400629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6937184A Granted JPS60213073A (ja) 1984-04-06 1984-04-06 半導体レ−ザ装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60213073A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142885A (ja) * 1986-12-05 1988-06-15 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置の製造方法
JPH02209782A (ja) * 1989-02-09 1990-08-21 Hikari Keisoku Gijutsu Kaihatsu Kk リッジ導波路の製造方法

Also Published As

Publication number Publication date
JPS60213073A (ja) 1985-10-25

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