JPH0555580B2 - - Google Patents
Info
- Publication number
- JPH0555580B2 JPH0555580B2 JP20889486A JP20889486A JPH0555580B2 JP H0555580 B2 JPH0555580 B2 JP H0555580B2 JP 20889486 A JP20889486 A JP 20889486A JP 20889486 A JP20889486 A JP 20889486A JP H0555580 B2 JPH0555580 B2 JP H0555580B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- ball
- bonding
- ingot
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 229910052788 barium Inorganic materials 0.000 claims abstract description 8
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 8
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 8
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 8
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 238000005491 wire drawing Methods 0.000 claims abstract description 8
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 6
- 239000012298 atmosphere Substances 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018170 Al—Au Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
- Wire Bonding (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61208894A JPS6365036A (ja) | 1986-09-05 | 1986-09-05 | 銅細線とその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61208894A JPS6365036A (ja) | 1986-09-05 | 1986-09-05 | 銅細線とその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPS6365036A JPS6365036A (ja) | 1988-03-23 |
JPH0555580B2 true JPH0555580B2 (ko) | 1993-08-17 |
Family
ID=16563889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61208894A Granted JPS6365036A (ja) | 1986-09-05 | 1986-09-05 | 銅細線とその製造方法 |
Country Status (1)
Country | Link |
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JP (1) | JPS6365036A (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2726939B2 (ja) * | 1989-03-06 | 1998-03-11 | 日鉱金属 株式会社 | 加工性,耐熱性の優れた高導電性銅合金 |
JP3364336B2 (ja) * | 1994-09-08 | 2003-01-08 | ティーディーケイ株式会社 | 光ディスクおよび被記録材 |
JP2009153851A (ja) * | 2007-12-27 | 2009-07-16 | Konica Minolta Medical & Graphic Inc | 超音波診断装置およびそれに用いる配線の製造方法 |
JP6056876B2 (ja) | 2015-01-07 | 2017-01-11 | 三菱マテリアル株式会社 | 超伝導安定化材 |
JP6299802B2 (ja) | 2016-04-06 | 2018-03-28 | 三菱マテリアル株式会社 | 超伝導安定化材、超伝導線及び超伝導コイル |
JP6299803B2 (ja) | 2016-04-06 | 2018-03-28 | 三菱マテリアル株式会社 | 超伝導線、及び、超伝導コイル |
CN107799496B (zh) * | 2017-09-01 | 2020-05-22 | 华南理工大学 | 一种电子封装用高可靠性铜合金键合丝及其制备方法 |
CN111910102B (zh) * | 2020-07-14 | 2021-08-03 | 中南大学 | 一种铜银复合材料导线及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62102551A (ja) * | 1985-10-30 | 1987-05-13 | Toshiba Corp | 半導体装置 |
JPS62253745A (ja) * | 1986-04-25 | 1987-11-05 | Mitsubishi Metal Corp | 伸線加工性および導電性の良好なCu合金超極細線 |
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1986
- 1986-09-05 JP JP61208894A patent/JPS6365036A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62102551A (ja) * | 1985-10-30 | 1987-05-13 | Toshiba Corp | 半導体装置 |
JPS62253745A (ja) * | 1986-04-25 | 1987-11-05 | Mitsubishi Metal Corp | 伸線加工性および導電性の良好なCu合金超極細線 |
Also Published As
Publication number | Publication date |
---|---|
JPS6365036A (ja) | 1988-03-23 |
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