JPH0553296B2 - - Google Patents
Info
- Publication number
- JPH0553296B2 JPH0553296B2 JP62262227A JP26222787A JPH0553296B2 JP H0553296 B2 JPH0553296 B2 JP H0553296B2 JP 62262227 A JP62262227 A JP 62262227A JP 26222787 A JP26222787 A JP 26222787A JP H0553296 B2 JPH0553296 B2 JP H0553296B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoresist
- pattern
- wafer
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 239000000758 substrate Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62262227A JPH01103834A (ja) | 1987-10-16 | 1987-10-16 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62262227A JPH01103834A (ja) | 1987-10-16 | 1987-10-16 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01103834A JPH01103834A (ja) | 1989-04-20 |
| JPH0553296B2 true JPH0553296B2 (fr) | 1993-08-09 |
Family
ID=17372843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62262227A Granted JPH01103834A (ja) | 1987-10-16 | 1987-10-16 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01103834A (fr) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4887778A (fr) * | 1972-02-21 | 1973-11-17 | ||
| JPS58158919A (ja) * | 1982-03-17 | 1983-09-21 | Hitachi Ltd | マスク位置合せ法 |
| JPS61248427A (ja) * | 1985-04-25 | 1986-11-05 | Nec Corp | 多層配線の形成方法 |
| JPS63237520A (ja) * | 1987-03-26 | 1988-10-04 | Nec Corp | 半導体素子製造方法 |
-
1987
- 1987-10-16 JP JP62262227A patent/JPH01103834A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4887778A (fr) * | 1972-02-21 | 1973-11-17 | ||
| JPS58158919A (ja) * | 1982-03-17 | 1983-09-21 | Hitachi Ltd | マスク位置合せ法 |
| JPS61248427A (ja) * | 1985-04-25 | 1986-11-05 | Nec Corp | 多層配線の形成方法 |
| JPS63237520A (ja) * | 1987-03-26 | 1988-10-04 | Nec Corp | 半導体素子製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01103834A (ja) | 1989-04-20 |
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Legal Events
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| FPAY | Renewal fee payment (event date is renewal date of database) |
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