JPH055180B2 - - Google Patents

Info

Publication number
JPH055180B2
JPH055180B2 JP59242414A JP24241484A JPH055180B2 JP H055180 B2 JPH055180 B2 JP H055180B2 JP 59242414 A JP59242414 A JP 59242414A JP 24241484 A JP24241484 A JP 24241484A JP H055180 B2 JPH055180 B2 JP H055180B2
Authority
JP
Japan
Prior art keywords
layer
emitter
conductivity type
base
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59242414A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61121359A (ja
Inventor
Naoki Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59242414A priority Critical patent/JPS61121359A/ja
Priority to US06/781,787 priority patent/US4617724A/en
Publication of JPS61121359A publication Critical patent/JPS61121359A/ja
Publication of JPH055180B2 publication Critical patent/JPH055180B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP59242414A 1983-06-30 1984-11-19 高速半導体装置の製造方法 Granted JPS61121359A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59242414A JPS61121359A (ja) 1984-11-19 1984-11-19 高速半導体装置の製造方法
US06/781,787 US4617724A (en) 1983-06-30 1985-09-30 Process for fabricating heterojunction bipolar transistor with low base resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59242414A JPS61121359A (ja) 1984-11-19 1984-11-19 高速半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61121359A JPS61121359A (ja) 1986-06-09
JPH055180B2 true JPH055180B2 (enrdf_load_stackoverflow) 1993-01-21

Family

ID=17088766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59242414A Granted JPS61121359A (ja) 1983-06-30 1984-11-19 高速半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61121359A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5318624B2 (ja) * 2009-03-27 2013-10-16 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508707A1 (fr) * 1981-06-26 1982-12-31 Thomson Csf Transistor balistique a multiples heterojonctions

Also Published As

Publication number Publication date
JPS61121359A (ja) 1986-06-09

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