JPH0550850B2 - - Google Patents

Info

Publication number
JPH0550850B2
JPH0550850B2 JP59177438A JP17743884A JPH0550850B2 JP H0550850 B2 JPH0550850 B2 JP H0550850B2 JP 59177438 A JP59177438 A JP 59177438A JP 17743884 A JP17743884 A JP 17743884A JP H0550850 B2 JPH0550850 B2 JP H0550850B2
Authority
JP
Japan
Prior art keywords
resist
pattern
ultraviolet rays
resist pattern
deep ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59177438A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155923A (ja
Inventor
Takashi Suzuki
Kei Kirita
Toshiaki Shinozaki
Yoshihide Kato
Kunihiro Isori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59177438A priority Critical patent/JPS6155923A/ja
Publication of JPS6155923A publication Critical patent/JPS6155923A/ja
Publication of JPH0550850B2 publication Critical patent/JPH0550850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/2041—

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59177438A 1984-08-28 1984-08-28 レジスト処理方法 Granted JPS6155923A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59177438A JPS6155923A (ja) 1984-08-28 1984-08-28 レジスト処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59177438A JPS6155923A (ja) 1984-08-28 1984-08-28 レジスト処理方法

Publications (2)

Publication Number Publication Date
JPS6155923A JPS6155923A (ja) 1986-03-20
JPH0550850B2 true JPH0550850B2 (enExample) 1993-07-30

Family

ID=16030943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59177438A Granted JPS6155923A (ja) 1984-08-28 1984-08-28 レジスト処理方法

Country Status (1)

Country Link
JP (1) JPS6155923A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232330A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
KR100687858B1 (ko) * 2000-12-29 2007-02-27 주식회사 하이닉스반도체 반도체소자의 패터닝 방법

Also Published As

Publication number Publication date
JPS6155923A (ja) 1986-03-20

Similar Documents

Publication Publication Date Title
US4403151A (en) Method of forming patterns
JPH0550850B2 (enExample)
CA1123683A (en) Image hardening process
JP2604573B2 (ja) 微細パターン形成方法
JP2506967B2 (ja) 光ディスク原盤の製造方法
JP2506637B2 (ja) パタ−ン形成方法
JPS6013432B2 (ja) Ａｌ又はＡｌ合金パタ−ンの形成方法
CN104536268A (zh) 一种光刻胶厚胶坚膜方法
JP3061037B2 (ja) レジストパターンの形成方法
JPS58132927A (ja) パタ−ン形成方法
JP2894772B2 (ja) Ｘ線窓の製造方法
JPH06342767A (ja) 密着露光方法
JP2000091309A (ja) 半導体パターン形成装置及び半導体パターン形成方法
JPH04327912A (ja) 微細凹凸パターン成形用成形型の製造方法
JPS6156867B2 (enExample)
JPS612326A (ja) レジストパタ−ンの形成方法
JPS6145823B2 (enExample)
JPS6222431A (ja) レジストパタ−ン形成方法
JPH0833655B2 (ja) フォトマスク修正方法
JPH01137634A (ja) 半導体装置の製造方法
JPS61209442A (ja) パタ−ン形成方法
JPH03269533A (ja) フォトマスクの製造方法およびそれに使用する基板
JPS613405A (ja) レジストパタ−ン形成方法
JPS5968744A (ja) フオトマスクの製造方法
JPH02128494A (ja) ガラスセラミック基板の入出力ピン用メタルパッド形成方法