JPH0550480B2 - - Google Patents

Info

Publication number
JPH0550480B2
JPH0550480B2 JP63259825A JP25982588A JPH0550480B2 JP H0550480 B2 JPH0550480 B2 JP H0550480B2 JP 63259825 A JP63259825 A JP 63259825A JP 25982588 A JP25982588 A JP 25982588A JP H0550480 B2 JPH0550480 B2 JP H0550480B2
Authority
JP
Japan
Prior art keywords
crystal
temperature
heat treatment
melting point
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63259825A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02107598A (ja
Inventor
Tomoki Inada
Yohei Otogi
Shuichi Tawarasako
Shoji Kuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP25982588A priority Critical patent/JPH02107598A/ja
Publication of JPH02107598A publication Critical patent/JPH02107598A/ja
Publication of JPH0550480B2 publication Critical patent/JPH0550480B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP25982588A 1988-10-14 1988-10-14 半絶縁性砒化ガリウム半導体単結晶の熱処理方法 Granted JPH02107598A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25982588A JPH02107598A (ja) 1988-10-14 1988-10-14 半絶縁性砒化ガリウム半導体単結晶の熱処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25982588A JPH02107598A (ja) 1988-10-14 1988-10-14 半絶縁性砒化ガリウム半導体単結晶の熱処理方法

Publications (2)

Publication Number Publication Date
JPH02107598A JPH02107598A (ja) 1990-04-19
JPH0550480B2 true JPH0550480B2 (cg-RX-API-DMAC7.html) 1993-07-29

Family

ID=17339517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25982588A Granted JPH02107598A (ja) 1988-10-14 1988-10-14 半絶縁性砒化ガリウム半導体単結晶の熱処理方法

Country Status (1)

Country Link
JP (1) JPH02107598A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3581686A4 (en) 2017-09-21 2020-10-28 Sumitomo Electric Industries, Ltd. SEMI-CONDUCTIVE SUBSTRATE TO SEMI-INSULATING COMPOUND AND SINGLE-INSULATING SINGLE-CONDUCTIVE COMPOUND
CN110629289B (zh) * 2019-11-01 2021-02-23 中国电子科技集团公司第四十六研究所 一种低亮暗点的4和6英寸半绝缘砷化镓抛光片制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62226900A (ja) * 1986-03-28 1987-10-05 Hitachi Metals Ltd 化合物半導体単結晶の製造方法

Also Published As

Publication number Publication date
JPH02107598A (ja) 1990-04-19

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