JPH02107598A - 半絶縁性砒化ガリウム半導体単結晶の熱処理方法 - Google Patents
半絶縁性砒化ガリウム半導体単結晶の熱処理方法Info
- Publication number
- JPH02107598A JPH02107598A JP25982588A JP25982588A JPH02107598A JP H02107598 A JPH02107598 A JP H02107598A JP 25982588 A JP25982588 A JP 25982588A JP 25982588 A JP25982588 A JP 25982588A JP H02107598 A JPH02107598 A JP H02107598A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- gallium arsenide
- temperature
- crystal
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 68
- 238000010438 heat treatment Methods 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 38
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- 230000007547 defect Effects 0.000 description 20
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 229910052785 arsenic Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000003708 ampul Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 gallium arsenide compound Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25982588A JPH02107598A (ja) | 1988-10-14 | 1988-10-14 | 半絶縁性砒化ガリウム半導体単結晶の熱処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25982588A JPH02107598A (ja) | 1988-10-14 | 1988-10-14 | 半絶縁性砒化ガリウム半導体単結晶の熱処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02107598A true JPH02107598A (ja) | 1990-04-19 |
| JPH0550480B2 JPH0550480B2 (cg-RX-API-DMAC7.html) | 1993-07-29 |
Family
ID=17339517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25982588A Granted JPH02107598A (ja) | 1988-10-14 | 1988-10-14 | 半絶縁性砒化ガリウム半導体単結晶の熱処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02107598A (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019058484A1 (ja) | 2017-09-21 | 2019-03-28 | 住友電気工業株式会社 | 半絶縁性化合物半導体基板および半絶縁性化合物半導体単結晶 |
| CN110629289A (zh) * | 2019-11-01 | 2019-12-31 | 中国电子科技集团公司第四十六研究所 | 一种低亮暗点的4和6英寸半绝缘砷化镓抛光片制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62226900A (ja) * | 1986-03-28 | 1987-10-05 | Hitachi Metals Ltd | 化合物半導体単結晶の製造方法 |
-
1988
- 1988-10-14 JP JP25982588A patent/JPH02107598A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62226900A (ja) * | 1986-03-28 | 1987-10-05 | Hitachi Metals Ltd | 化合物半導体単結晶の製造方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019058484A1 (ja) | 2017-09-21 | 2019-03-28 | 住友電気工業株式会社 | 半絶縁性化合物半導体基板および半絶縁性化合物半導体単結晶 |
| US10971374B2 (en) | 2017-09-21 | 2021-04-06 | Sumitomo Electric Industries, Ltd. | Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal |
| CN110629289A (zh) * | 2019-11-01 | 2019-12-31 | 中国电子科技集团公司第四十六研究所 | 一种低亮暗点的4和6英寸半绝缘砷化镓抛光片制备方法 |
| CN110629289B (zh) * | 2019-11-01 | 2021-02-23 | 中国电子科技集团公司第四十六研究所 | 一种低亮暗点的4和6英寸半绝缘砷化镓抛光片制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0550480B2 (cg-RX-API-DMAC7.html) | 1993-07-29 |
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