JPH0548951B2 - - Google Patents

Info

Publication number
JPH0548951B2
JPH0548951B2 JP62017464A JP1746487A JPH0548951B2 JP H0548951 B2 JPH0548951 B2 JP H0548951B2 JP 62017464 A JP62017464 A JP 62017464A JP 1746487 A JP1746487 A JP 1746487A JP H0548951 B2 JPH0548951 B2 JP H0548951B2
Authority
JP
Japan
Prior art keywords
layer
trench
region
opening
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62017464A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62232140A (ja
Inventor
Eruukare Badei
Reimondo Gaanache Richaado
Kanteiraru Gataria Ashuin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS62232140A publication Critical patent/JPS62232140A/ja
Publication of JPH0548951B2 publication Critical patent/JPH0548951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0148—
    • H10W10/17—
    • H10W20/021—

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP62017464A 1986-03-27 1987-01-29 半導体装置製造方法 Granted JPS62232140A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US844655 1986-03-27
US06/844,655 US4725562A (en) 1986-03-27 1986-03-27 Method of making a contact to a trench isolated device

Publications (2)

Publication Number Publication Date
JPS62232140A JPS62232140A (ja) 1987-10-12
JPH0548951B2 true JPH0548951B2 (enExample) 1993-07-22

Family

ID=25293319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62017464A Granted JPS62232140A (ja) 1986-03-27 1987-01-29 半導体装置製造方法

Country Status (4)

Country Link
US (1) US4725562A (enExample)
EP (1) EP0238836B1 (enExample)
JP (1) JPS62232140A (enExample)
DE (1) DE3763608D1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049521A (en) * 1989-11-30 1991-09-17 Silicon General, Inc. Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate
US5166097A (en) * 1990-11-26 1992-11-24 The Boeing Company Silicon wafers containing conductive feedthroughs
WO1996002070A2 (en) * 1994-07-12 1996-01-25 National Semiconductor Corporation Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit
US5742090A (en) * 1996-04-04 1998-04-21 Advanced Micro Devices, Inc. Narrow width trenches for field isolation in integrated circuits
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US6265282B1 (en) * 1998-08-17 2001-07-24 Micron Technology, Inc. Process for making an isolation structure
US7335965B2 (en) * 1999-08-25 2008-02-26 Micron Technology, Inc. Packaging of electronic chips with air-bridge structures
US7276788B1 (en) * 1999-08-25 2007-10-02 Micron Technology, Inc. Hydrophobic foamed insulators for high density circuits
US6413827B2 (en) 2000-02-14 2002-07-02 Paul A. Farrar Low dielectric constant shallow trench isolation
US6677209B2 (en) 2000-02-14 2004-01-13 Micron Technology, Inc. Low dielectric constant STI with SOI devices
US6890847B1 (en) 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
KR100393199B1 (ko) * 2001-01-15 2003-07-31 페어차일드코리아반도체 주식회사 높은 브레이크다운 전압을 갖는 고전압 반도체 소자 및 그제조방법
US7491614B2 (en) * 2005-01-13 2009-02-17 International Business Machines Corporation Methods for forming channel stop for deep trench isolation prior to deep trench etch
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
US7446036B1 (en) 2007-12-18 2008-11-04 International Business Machines Corporation Gap free anchored conductor and dielectric structure and method for fabrication thereof
JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
JP2009302222A (ja) * 2008-06-12 2009-12-24 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
DE1524892B1 (de) * 1967-12-15 1970-09-03 Ibm Deutschland Halbleiterspeicherzelle mit kreuzgekoppelten Multie mittertransistoren
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
DE2605641C3 (de) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Hochfrequenztransistor und Verfahren zu seiner Herstellung
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
US4174252A (en) * 1978-07-26 1979-11-13 Rca Corporation Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
JPS5636143A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Manufacture of semiconductor device
US4242156A (en) * 1979-10-15 1980-12-30 Rockwell International Corporation Method of fabricating an SOS island edge passivation structure
JPS59106133A (ja) * 1982-12-09 1984-06-19 Nec Corp 集積回路装置
JPS59189652A (ja) * 1983-04-13 1984-10-27 Matsushita Electronics Corp 半導体集積装置
US4519128A (en) * 1983-10-05 1985-05-28 International Business Machines Corporation Method of making a trench isolated device
US4534826A (en) * 1983-12-29 1985-08-13 Ibm Corporation Trench etch process for dielectric isolation
US4589193A (en) * 1984-06-29 1986-05-20 International Business Machines Corporation Metal silicide channel stoppers for integrated circuits and method for making the same
US4549927A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices
US4599136A (en) * 1984-10-03 1986-07-08 International Business Machines Corporation Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials
US4541168A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making metal contact studs between first level metal and regions of a semiconductor device compatible with polyimide-filled deep trench isolation schemes
US4654120A (en) * 1985-10-31 1987-03-31 International Business Machines Corporation Method of making a planar trench semiconductor structure

Also Published As

Publication number Publication date
EP0238836A3 (en) 1987-12-02
EP0238836A2 (en) 1987-09-30
DE3763608D1 (de) 1990-08-16
EP0238836B1 (en) 1990-07-11
JPS62232140A (ja) 1987-10-12
US4725562A (en) 1988-02-16

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