DE3763608D1 - Verfahren zur ausbildung eines kontaktes zu einem durch eine graben isolierten bauelement. - Google Patents

Verfahren zur ausbildung eines kontaktes zu einem durch eine graben isolierten bauelement.

Info

Publication number
DE3763608D1
DE3763608D1 DE8787102194T DE3763608T DE3763608D1 DE 3763608 D1 DE3763608 D1 DE 3763608D1 DE 8787102194 T DE8787102194 T DE 8787102194T DE 3763608 T DE3763608 T DE 3763608T DE 3763608 D1 DE3763608 D1 DE 3763608D1
Authority
DE
Germany
Prior art keywords
trench
forming
contact
component isolated
isolated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787102194T
Other languages
German (de)
English (en)
Inventor
Badih El-Kareh
Richard Raymond Garnache
Ashwin Kantilal Ghatalia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3763608D1 publication Critical patent/DE3763608D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W10/0148—
    • H10W10/17—
    • H10W20/021—
DE8787102194T 1986-03-27 1987-02-17 Verfahren zur ausbildung eines kontaktes zu einem durch eine graben isolierten bauelement. Expired - Lifetime DE3763608D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/844,655 US4725562A (en) 1986-03-27 1986-03-27 Method of making a contact to a trench isolated device

Publications (1)

Publication Number Publication Date
DE3763608D1 true DE3763608D1 (de) 1990-08-16

Family

ID=25293319

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787102194T Expired - Lifetime DE3763608D1 (de) 1986-03-27 1987-02-17 Verfahren zur ausbildung eines kontaktes zu einem durch eine graben isolierten bauelement.

Country Status (4)

Country Link
US (1) US4725562A (enExample)
EP (1) EP0238836B1 (enExample)
JP (1) JPS62232140A (enExample)
DE (1) DE3763608D1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049521A (en) * 1989-11-30 1991-09-17 Silicon General, Inc. Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate
US5166097A (en) * 1990-11-26 1992-11-24 The Boeing Company Silicon wafers containing conductive feedthroughs
WO1996002070A2 (en) * 1994-07-12 1996-01-25 National Semiconductor Corporation Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit
US5742090A (en) * 1996-04-04 1998-04-21 Advanced Micro Devices, Inc. Narrow width trenches for field isolation in integrated circuits
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US6265282B1 (en) * 1998-08-17 2001-07-24 Micron Technology, Inc. Process for making an isolation structure
US7335965B2 (en) * 1999-08-25 2008-02-26 Micron Technology, Inc. Packaging of electronic chips with air-bridge structures
US7276788B1 (en) * 1999-08-25 2007-10-02 Micron Technology, Inc. Hydrophobic foamed insulators for high density circuits
US6413827B2 (en) 2000-02-14 2002-07-02 Paul A. Farrar Low dielectric constant shallow trench isolation
US6677209B2 (en) 2000-02-14 2004-01-13 Micron Technology, Inc. Low dielectric constant STI with SOI devices
US6890847B1 (en) 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
KR100393199B1 (ko) * 2001-01-15 2003-07-31 페어차일드코리아반도체 주식회사 높은 브레이크다운 전압을 갖는 고전압 반도체 소자 및 그제조방법
US7491614B2 (en) * 2005-01-13 2009-02-17 International Business Machines Corporation Methods for forming channel stop for deep trench isolation prior to deep trench etch
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
US7446036B1 (en) 2007-12-18 2008-11-04 International Business Machines Corporation Gap free anchored conductor and dielectric structure and method for fabrication thereof
JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
JP2009302222A (ja) * 2008-06-12 2009-12-24 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
DE1524892B1 (de) * 1967-12-15 1970-09-03 Ibm Deutschland Halbleiterspeicherzelle mit kreuzgekoppelten Multie mittertransistoren
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
DE2605641C3 (de) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Hochfrequenztransistor und Verfahren zu seiner Herstellung
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
US4174252A (en) * 1978-07-26 1979-11-13 Rca Corporation Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
JPS5636143A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Manufacture of semiconductor device
US4242156A (en) * 1979-10-15 1980-12-30 Rockwell International Corporation Method of fabricating an SOS island edge passivation structure
JPS59106133A (ja) * 1982-12-09 1984-06-19 Nec Corp 集積回路装置
JPS59189652A (ja) * 1983-04-13 1984-10-27 Matsushita Electronics Corp 半導体集積装置
US4519128A (en) * 1983-10-05 1985-05-28 International Business Machines Corporation Method of making a trench isolated device
US4534826A (en) * 1983-12-29 1985-08-13 Ibm Corporation Trench etch process for dielectric isolation
US4589193A (en) * 1984-06-29 1986-05-20 International Business Machines Corporation Metal silicide channel stoppers for integrated circuits and method for making the same
US4549927A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices
US4599136A (en) * 1984-10-03 1986-07-08 International Business Machines Corporation Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials
US4541168A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making metal contact studs between first level metal and regions of a semiconductor device compatible with polyimide-filled deep trench isolation schemes
US4654120A (en) * 1985-10-31 1987-03-31 International Business Machines Corporation Method of making a planar trench semiconductor structure

Also Published As

Publication number Publication date
EP0238836A3 (en) 1987-12-02
EP0238836A2 (en) 1987-09-30
JPH0548951B2 (enExample) 1993-07-22
EP0238836B1 (en) 1990-07-11
JPS62232140A (ja) 1987-10-12
US4725562A (en) 1988-02-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee