JPH0546093B2 - - Google Patents

Info

Publication number
JPH0546093B2
JPH0546093B2 JP58100619A JP10061983A JPH0546093B2 JP H0546093 B2 JPH0546093 B2 JP H0546093B2 JP 58100619 A JP58100619 A JP 58100619A JP 10061983 A JP10061983 A JP 10061983A JP H0546093 B2 JPH0546093 B2 JP H0546093B2
Authority
JP
Japan
Prior art keywords
gas
plasma
frequency power
high frequency
amorphous semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58100619A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59225517A (ja
Inventor
Kenji Maekawa
Yukihisa Takeuchi
Masaaki Mori
Toshiaki Nishizawa
Yasuhide Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP58100619A priority Critical patent/JPS59225517A/ja
Publication of JPS59225517A publication Critical patent/JPS59225517A/ja
Publication of JPH0546093B2 publication Critical patent/JPH0546093B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP58100619A 1983-06-06 1983-06-06 非晶室半導体の製造方法 Granted JPS59225517A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58100619A JPS59225517A (ja) 1983-06-06 1983-06-06 非晶室半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58100619A JPS59225517A (ja) 1983-06-06 1983-06-06 非晶室半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS59225517A JPS59225517A (ja) 1984-12-18
JPH0546093B2 true JPH0546093B2 (enrdf_load_stackoverflow) 1993-07-13

Family

ID=14278852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58100619A Granted JPS59225517A (ja) 1983-06-06 1983-06-06 非晶室半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS59225517A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61267315A (ja) * 1985-05-22 1986-11-26 Anelva Corp プラズマｃｖｄ装置
JPS6321821A (ja) * 1986-07-15 1988-01-29 Sanyo Electric Co Ltd 半導体製造方法及び製造装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827656B2 (ja) * 1976-11-17 1983-06-10 株式会社東芝 プラズマｃｖｄ装置
JPS57167631A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing method

Also Published As

Publication number Publication date
JPS59225517A (ja) 1984-12-18

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