JPH0544825B2 - - Google Patents
Info
- Publication number
- JPH0544825B2 JPH0544825B2 JP60132216A JP13221685A JPH0544825B2 JP H0544825 B2 JPH0544825 B2 JP H0544825B2 JP 60132216 A JP60132216 A JP 60132216A JP 13221685 A JP13221685 A JP 13221685A JP H0544825 B2 JPH0544825 B2 JP H0544825B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- reaction chamber
- gas
- support plate
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 35
- 239000012495 reaction gas Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000010453 quartz Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000010574 gas phase reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13221685A JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13221685A JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61289623A JPS61289623A (ja) | 1986-12-19 |
| JPH0544825B2 true JPH0544825B2 (ru) | 1993-07-07 |
Family
ID=15076101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13221685A Granted JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61289623A (ru) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06103663B2 (ja) * | 1987-01-21 | 1994-12-14 | 東京エレクトロン株式会社 | 処理装置 |
| FI97730C (fi) * | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
| FI100409B (fi) | 1994-11-28 | 1997-11-28 | Asm Int | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi |
| FI97731C (fi) * | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Menetelmä ja laite ohutkalvojen valmistamiseksi |
| JP3477953B2 (ja) * | 1995-10-18 | 2003-12-10 | 東京エレクトロン株式会社 | 熱処理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113420A (ja) * | 1983-11-22 | 1985-06-19 | Mitsubishi Electric Corp | 半導体結晶の製造装置 |
| JPS60178621A (ja) * | 1984-02-24 | 1985-09-12 | Toshiba Corp | 薄膜形成装置 |
-
1985
- 1985-06-18 JP JP13221685A patent/JPS61289623A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113420A (ja) * | 1983-11-22 | 1985-06-19 | Mitsubishi Electric Corp | 半導体結晶の製造装置 |
| JPS60178621A (ja) * | 1984-02-24 | 1985-09-12 | Toshiba Corp | 薄膜形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61289623A (ja) | 1986-12-19 |
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