JPH0544182B2 - - Google Patents

Info

Publication number
JPH0544182B2
JPH0544182B2 JP59253007A JP25300784A JPH0544182B2 JP H0544182 B2 JPH0544182 B2 JP H0544182B2 JP 59253007 A JP59253007 A JP 59253007A JP 25300784 A JP25300784 A JP 25300784A JP H0544182 B2 JPH0544182 B2 JP H0544182B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
wiring
layer
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59253007A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61131546A (ja
Inventor
Takeo Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP25300784A priority Critical patent/JPS61131546A/ja
Priority to US06/780,071 priority patent/US4663825A/en
Publication of JPS61131546A publication Critical patent/JPS61131546A/ja
Priority to US07/047,146 priority patent/US4769337A/en
Publication of JPH0544182B2 publication Critical patent/JPH0544182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP25300784A 1984-09-27 1984-11-30 半導体装置の製造方法 Granted JPS61131546A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP25300784A JPS61131546A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法
US06/780,071 US4663825A (en) 1984-09-27 1985-09-25 Method of manufacturing semiconductor device
US07/047,146 US4769337A (en) 1984-09-27 1987-05-08 Method of forming selective polysilicon wiring layer to source, drain and emitter regions by implantation through polysilicon layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25300784A JPS61131546A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61131546A JPS61131546A (ja) 1986-06-19
JPH0544182B2 true JPH0544182B2 (fr) 1993-07-05

Family

ID=17245189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25300784A Granted JPS61131546A (ja) 1984-09-27 1984-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61131546A (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495958A (fr) * 1972-03-20 1974-01-19
JPS5040835A (fr) * 1973-08-14 1975-04-14

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495958A (fr) * 1972-03-20 1974-01-19
JPS5040835A (fr) * 1973-08-14 1975-04-14

Also Published As

Publication number Publication date
JPS61131546A (ja) 1986-06-19

Similar Documents

Publication Publication Date Title
US4663825A (en) Method of manufacturing semiconductor device
US4900257A (en) Method of making a polycide gate using a titanium nitride capping layer
JPH0564456B2 (fr)
US5055420A (en) Process for fabricating semiconductor integrated circuit devices
US6261932B1 (en) Method of fabricating Schottky diode and related structure
US5091322A (en) Semiconductor device and method of manufacturing the same
KR0178551B1 (ko) 반도체 집적 회로 제조 방법
KR100324144B1 (ko) 반도체 장치 및 그 제조방법
US5443994A (en) Method of fabricating a semiconductor device having a borosilicate glass spacer
JPH0846058A (ja) Ｍｏｓ型半導体装置の製造方法
JPS6362108B2 (fr)
JPH05183160A (ja) 半導体装置及びその製造方法
JPS63140562A (ja) 選択的エピタキシイＢｉＣＭＯＳプロセス
JPH06232351A (ja) ＢｉＣＭＯＳ型半導体装置及びその製造方法
JPH0544182B2 (fr)
JPH0527975B2 (fr)
JP2886186B2 (ja) 半導体装置
JP2567832B2 (ja) 半導体装置の製造方法
JPH0322708B2 (fr)
JPH0517701B2 (fr)
JPH05183117A (ja) 半導体装置およびその製造方法
JP3309995B2 (ja) 半導体装置
JPH03283565A (ja) Ｍｏｓ型半導体集積回路装置
JPH056345B2 (fr)
JP2874885B2 (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term