JPH0543292B2 - - Google Patents
Info
- Publication number
- JPH0543292B2 JPH0543292B2 JP62288584A JP28858487A JPH0543292B2 JP H0543292 B2 JPH0543292 B2 JP H0543292B2 JP 62288584 A JP62288584 A JP 62288584A JP 28858487 A JP28858487 A JP 28858487A JP H0543292 B2 JPH0543292 B2 JP H0543292B2
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- layer
- algaas
- forming
- low resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 28
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000000615 nonconductor Substances 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- -1 silicide metals Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28858487A JPH01130572A (ja) | 1987-11-17 | 1987-11-17 | 化合物半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28858487A JPH01130572A (ja) | 1987-11-17 | 1987-11-17 | 化合物半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01130572A JPH01130572A (ja) | 1989-05-23 |
| JPH0543292B2 true JPH0543292B2 (fr) | 1993-07-01 |
Family
ID=17732161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28858487A Granted JPH01130572A (ja) | 1987-11-17 | 1987-11-17 | 化合物半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01130572A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009014701A1 (de) | 2009-03-27 | 2010-09-30 | Carl Zeiss Smt Ag | Optische Baugruppe |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180186A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Semiconductor device and manufacturing method therefor |
| JPS57193069A (en) * | 1981-05-22 | 1982-11-27 | Fujitsu Ltd | Semiconductor device |
| JPS5961919A (ja) * | 1982-10-01 | 1984-04-09 | Hitachi Ltd | 薄膜の製造方法 |
| JPS62169483A (ja) * | 1986-01-22 | 1987-07-25 | Sumitomo Electric Ind Ltd | シヨツトキゲ−ト電界効果トランジスタの構造及び製造方法 |
-
1987
- 1987-11-17 JP JP28858487A patent/JPH01130572A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180186A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Semiconductor device and manufacturing method therefor |
| JPS57193069A (en) * | 1981-05-22 | 1982-11-27 | Fujitsu Ltd | Semiconductor device |
| JPS5961919A (ja) * | 1982-10-01 | 1984-04-09 | Hitachi Ltd | 薄膜の製造方法 |
| JPS62169483A (ja) * | 1986-01-22 | 1987-07-25 | Sumitomo Electric Ind Ltd | シヨツトキゲ−ト電界効果トランジスタの構造及び製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01130572A (ja) | 1989-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |