JPH0535927B2 - - Google Patents
Info
- Publication number
- JPH0535927B2 JPH0535927B2 JP60271518A JP27151885A JPH0535927B2 JP H0535927 B2 JPH0535927 B2 JP H0535927B2 JP 60271518 A JP60271518 A JP 60271518A JP 27151885 A JP27151885 A JP 27151885A JP H0535927 B2 JPH0535927 B2 JP H0535927B2
- Authority
- JP
- Japan
- Prior art keywords
- npn
- circuit
- base
- nmos
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 102000004207 Neuropilin-1 Human genes 0.000 description 2
- 108090000772 Neuropilin-1 Proteins 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 102000004213 Neuropilin-2 Human genes 0.000 description 1
- 108090000770 Neuropilin-2 Proteins 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP84115098A EP0145004B1 (de) | 1983-12-12 | 1984-12-10 | Kombinierte Bipolartransistor-Feldeffekttransistor-Schaltung |
| EP84115098.0 | 1984-12-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61198817A JPS61198817A (ja) | 1986-09-03 |
| JPH0535927B2 true JPH0535927B2 (de) | 1993-05-27 |
Family
ID=8192343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60271518A Granted JPS61198817A (ja) | 1984-12-10 | 1985-12-04 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61198817A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61225924A (ja) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | インバ−タ回路 |
| EP0318624B1 (de) * | 1987-12-01 | 1993-11-10 | International Business Machines Corporation | Logische Schaltkreisfamilie von Multibasis-bi-CMOS |
| JP2550138B2 (ja) * | 1988-03-18 | 1996-11-06 | 株式会社日立製作所 | バイポーラトランジスタと電界効果トランジスタとを有する半導体集積回路装置 |
| KR910005612B1 (ko) * | 1988-08-06 | 1991-07-31 | 삼성전자 주식회사 | 고집적 바이 씨 모스 논리회로 |
| US7342429B2 (en) | 2003-09-11 | 2008-03-11 | International Business Machines Corporation | Programmable low-power high-frequency divider |
| US6917662B2 (en) | 2003-09-11 | 2005-07-12 | International Business Machines Corporation | Programmable low-power high-frequency divider |
-
1985
- 1985-12-04 JP JP60271518A patent/JPS61198817A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61198817A (ja) | 1986-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |