JPH053146B2 - - Google Patents

Info

Publication number
JPH053146B2
JPH053146B2 JP57224160A JP22416082A JPH053146B2 JP H053146 B2 JPH053146 B2 JP H053146B2 JP 57224160 A JP57224160 A JP 57224160A JP 22416082 A JP22416082 A JP 22416082A JP H053146 B2 JPH053146 B2 JP H053146B2
Authority
JP
Japan
Prior art keywords
alloy film
impurity
semiconductor device
doping
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57224160A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59114868A (ja
Inventor
Kyoichi Suguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57224160A priority Critical patent/JPS59114868A/ja
Publication of JPS59114868A publication Critical patent/JPS59114868A/ja
Publication of JPH053146B2 publication Critical patent/JPH053146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57224160A 1982-12-21 1982-12-21 半導体装置の製造方法 Granted JPS59114868A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57224160A JPS59114868A (ja) 1982-12-21 1982-12-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57224160A JPS59114868A (ja) 1982-12-21 1982-12-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59114868A JPS59114868A (ja) 1984-07-03
JPH053146B2 true JPH053146B2 (enrdf_load_stackoverflow) 1993-01-14

Family

ID=16809466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57224160A Granted JPS59114868A (ja) 1982-12-21 1982-12-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59114868A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2512603B2 (ja) * 1990-06-06 1996-07-03 松下電器産業株式会社 半導体装置の製造方法
KR100700387B1 (ko) 2001-03-02 2007-03-28 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 게이트 및 시모스구조와 모스구조
JP2005136198A (ja) 2003-10-30 2005-05-26 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS59114868A (ja) 1984-07-03

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