JPH0479150B2 - - Google Patents

Info

Publication number
JPH0479150B2
JPH0479150B2 JP57143702A JP14370282A JPH0479150B2 JP H0479150 B2 JPH0479150 B2 JP H0479150B2 JP 57143702 A JP57143702 A JP 57143702A JP 14370282 A JP14370282 A JP 14370282A JP H0479150 B2 JPH0479150 B2 JP H0479150B2
Authority
JP
Japan
Prior art keywords
gate electrode
film
mosix
semiconductor device
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57143702A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5933875A (ja
Inventor
Hidemi Ishiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57143702A priority Critical patent/JPS5933875A/ja
Publication of JPS5933875A publication Critical patent/JPS5933875A/ja
Publication of JPH0479150B2 publication Critical patent/JPH0479150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57143702A 1982-08-19 1982-08-19 Ｍｏｓ型半導体装置 Granted JPS5933875A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57143702A JPS5933875A (ja) 1982-08-19 1982-08-19 Ｍｏｓ型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57143702A JPS5933875A (ja) 1982-08-19 1982-08-19 Ｍｏｓ型半導体装置

Publications (2)

Publication Number Publication Date
JPS5933875A JPS5933875A (ja) 1984-02-23
JPH0479150B2 true JPH0479150B2 (enrdf_load_stackoverflow) 1992-12-15

Family

ID=15344978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57143702A Granted JPS5933875A (ja) 1982-08-19 1982-08-19 Ｍｏｓ型半導体装置

Country Status (1)

Country Link
JP (1) JPS5933875A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100700387B1 (ko) 2001-03-02 2007-03-28 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 게이트 및 시모스구조와 모스구조
US6991948B2 (en) 2003-11-05 2006-01-31 Solid State Measurements, Inc. Method of electrical characterization of a silicon-on-insulator (SOI) wafer
US7327155B2 (en) 2005-11-17 2008-02-05 Solid State Measurements, Inc. Elastic metal gate MOS transistor for surface mobility measurement in semiconductor materials

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121667A (en) * 1979-03-13 1980-09-18 Seiko Epson Corp Integrated circuit

Also Published As

Publication number Publication date
JPS5933875A (ja) 1984-02-23

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