JPH0531317B2 - - Google Patents

Info

Publication number
JPH0531317B2
JPH0531317B2 JP12709284A JP12709284A JPH0531317B2 JP H0531317 B2 JPH0531317 B2 JP H0531317B2 JP 12709284 A JP12709284 A JP 12709284A JP 12709284 A JP12709284 A JP 12709284A JP H0531317 B2 JPH0531317 B2 JP H0531317B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
bonding pad
electrode
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP12709284A
Other languages
English (en)
Japanese (ja)
Other versions
JPS615585A (ja
Inventor
Atsushi Ichihara
Masahito Mushigami
Masayoshi Muranishi
Juji Ishida
Haruo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59127092A priority Critical patent/JPS615585A/ja
Publication of JPS615585A publication Critical patent/JPS615585A/ja
Publication of JPH0531317B2 publication Critical patent/JPH0531317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP59127092A 1984-06-19 1984-06-19 発光半導体素子の製造方法 Granted JPS615585A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59127092A JPS615585A (ja) 1984-06-19 1984-06-19 発光半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59127092A JPS615585A (ja) 1984-06-19 1984-06-19 発光半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS615585A JPS615585A (ja) 1986-01-11
JPH0531317B2 true JPH0531317B2 (bg) 1993-05-12

Family

ID=14951380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59127092A Granted JPS615585A (ja) 1984-06-19 1984-06-19 発光半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS615585A (bg)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JP2002515181A (ja) * 1996-06-05 2002-05-21 サーノフ コーポレイション 発光半導体装置
US6087680A (en) * 1997-01-31 2000-07-11 Siemens Aktiengesellschaft Led device
US6430207B1 (en) 1998-09-23 2002-08-06 Sarnoff Corporation High-power laser with transverse mode filter
DE10056292A1 (de) * 2000-11-14 2002-09-19 Osram Opto Semiconductors Gmbh Lumineszenzdiode
CN100449805C (zh) * 2006-11-08 2009-01-07 吴质朴 铝镓铟磷系化合物半导体发光器的制造方法
CN101286541B (zh) * 2007-04-09 2012-04-11 晶元光电股份有限公司 具有叠合透明电极的半导体发光装置
JP6441999B2 (ja) * 2017-06-14 2018-12-19 ローム株式会社 半導体発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5361039A (en) * 1976-11-01 1978-06-01 Cook Electric Co Circuit protector
JPS579233A (en) * 1980-06-19 1982-01-18 Tokyo Shibaura Electric Co Battery charging device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5361039A (en) * 1976-11-01 1978-06-01 Cook Electric Co Circuit protector
JPS579233A (en) * 1980-06-19 1982-01-18 Tokyo Shibaura Electric Co Battery charging device

Also Published As

Publication number Publication date
JPS615585A (ja) 1986-01-11

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term