JPH0530909B2 - - Google Patents
Info
- Publication number
- JPH0530909B2 JPH0530909B2 JP17586784A JP17586784A JPH0530909B2 JP H0530909 B2 JPH0530909 B2 JP H0530909B2 JP 17586784 A JP17586784 A JP 17586784A JP 17586784 A JP17586784 A JP 17586784A JP H0530909 B2 JPH0530909 B2 JP H0530909B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- item
- forming method
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 47
- 239000007789 gas Substances 0.000 claims description 45
- 239000010408 film Substances 0.000 claims description 40
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 25
- 229910052753 mercury Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 229910000077 silane Inorganic materials 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 206010070834 Sensitisation Diseases 0.000 claims description 7
- 230000008313 sensitization Effects 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000006552 photochemical reaction Methods 0.000 claims description 5
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052805 deuterium Inorganic materials 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 claims description 4
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 1
- 150000001342 alkaline earth metals Chemical class 0.000 claims 1
- 239000000941 radioactive substance Substances 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 208000017983 photosensitivity disease Diseases 0.000 description 1
- 231100000434 photosensitization Toxicity 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silicon hydrogen compound Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17586784A JPS6156278A (ja) | 1984-08-25 | 1984-08-25 | 成膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17586784A JPS6156278A (ja) | 1984-08-25 | 1984-08-25 | 成膜方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6156278A JPS6156278A (ja) | 1986-03-20 |
| JPH0530909B2 true JPH0530909B2 (enrdf_load_html_response) | 1993-05-11 |
Family
ID=16003586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17586784A Granted JPS6156278A (ja) | 1984-08-25 | 1984-08-25 | 成膜方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6156278A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3919538A1 (de) * | 1989-06-15 | 1990-12-20 | Asea Brown Boveri | Beschichtungsvorrichtung |
| US20080113108A1 (en) * | 2006-11-09 | 2008-05-15 | Stowell Michael W | System and method for control of electromagnetic radiation in pecvd discharge processes |
-
1984
- 1984-08-25 JP JP17586784A patent/JPS6156278A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6156278A (ja) | 1986-03-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3148004B2 (ja) | 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法 | |
| JP3517934B2 (ja) | シリコン膜の形成方法 | |
| JPS6289873A (ja) | 透明導電膜形成方法 | |
| JPH04280975A (ja) | ＺｎＯ透明導電膜の製造方法 | |
| JP2012149278A (ja) | シリコン含有膜の製造方法 | |
| EP0239374B1 (en) | Source of ultraviolet rays and use of the same in photochemical reaction methods | |
| US4910044A (en) | Ultraviolet light emitting device and application thereof | |
| JPS60245217A (ja) | 薄膜形成装置 | |
| JPH0530909B2 (enrdf_load_html_response) | ||
| JPH0563551B2 (enrdf_load_html_response) | ||
| JPH05144741A (ja) | アモルフアスシリコン膜の形成方法 | |
| JPS6156280A (ja) | 被膜形成方法 | |
| JP2608456B2 (ja) | 薄膜形成装置 | |
| JPS616199A (ja) | ダイヤモンドの気相合成方法とその装置 | |
| EP0407088B1 (en) | Method of forming an amorphous semiconductor film | |
| JPH0586648B2 (enrdf_load_html_response) | ||
| JP2564538B2 (ja) | 半導体処理装置 | |
| JPS58119334A (ja) | 光化学反応蒸着方法 | |
| JPS6246515A (ja) | 薄膜形成方法及びその装置 | |
| JPS6150147B2 (enrdf_load_html_response) | ||
| JPH0458174B2 (enrdf_load_html_response) | ||
| JPS6152230B2 (enrdf_load_html_response) | ||
| JPH0674502B2 (ja) | 半導体装置 | |
| JPS6118125A (ja) | 薄膜形成装置 | |
| JPH0978245A (ja) | 薄膜形成方法 |