JPH0458174B2 - - Google Patents

Info

Publication number
JPH0458174B2
JPH0458174B2 JP58092497A JP9249783A JPH0458174B2 JP H0458174 B2 JPH0458174 B2 JP H0458174B2 JP 58092497 A JP58092497 A JP 58092497A JP 9249783 A JP9249783 A JP 9249783A JP H0458174 B2 JPH0458174 B2 JP H0458174B2
Authority
JP
Japan
Prior art keywords
discharge
film forming
gas
forming method
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58092497A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59218722A (ja
Inventor
Tatsumi Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP58092497A priority Critical patent/JPS59218722A/ja
Publication of JPS59218722A publication Critical patent/JPS59218722A/ja
Publication of JPH0458174B2 publication Critical patent/JPH0458174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP58092497A 1983-05-27 1983-05-27 被膜形成方法 Granted JPS59218722A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58092497A JPS59218722A (ja) 1983-05-27 1983-05-27 被膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58092497A JPS59218722A (ja) 1983-05-27 1983-05-27 被膜形成方法

Publications (2)

Publication Number Publication Date
JPS59218722A JPS59218722A (ja) 1984-12-10
JPH0458174B2 true JPH0458174B2 (enrdf_load_html_response) 1992-09-16

Family

ID=14055934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58092497A Granted JPS59218722A (ja) 1983-05-27 1983-05-27 被膜形成方法

Country Status (1)

Country Link
JP (1) JPS59218722A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI365519B (en) * 2003-12-19 2012-06-01 Mattson Tech Canada Inc Apparatuses and methods for suppressing thermally induced motion of a workpiece

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer

Also Published As

Publication number Publication date
JPS59218722A (ja) 1984-12-10

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