JPH0530299B2 - - Google Patents
Info
- Publication number
- JPH0530299B2 JPH0530299B2 JP62019348A JP1934887A JPH0530299B2 JP H0530299 B2 JPH0530299 B2 JP H0530299B2 JP 62019348 A JP62019348 A JP 62019348A JP 1934887 A JP1934887 A JP 1934887A JP H0530299 B2 JPH0530299 B2 JP H0530299B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- wafer
- susceptor
- support
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P72/7616—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H10P72/0432—
-
- H10P72/7621—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62019348A JPS63186422A (ja) | 1987-01-28 | 1987-01-28 | ウエハサセプタ装置 |
| US07/391,556 US5119541A (en) | 1987-01-28 | 1988-01-28 | Wafer succeptor apparatus |
| PCT/JP1988/000067 WO1993013548A1 (fr) | 1987-01-28 | 1988-01-28 | Suscepteur de tranches |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62019348A JPS63186422A (ja) | 1987-01-28 | 1987-01-28 | ウエハサセプタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63186422A JPS63186422A (ja) | 1988-08-02 |
| JPH0530299B2 true JPH0530299B2 (en:Method) | 1993-05-07 |
Family
ID=11996885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62019348A Granted JPS63186422A (ja) | 1987-01-28 | 1987-01-28 | ウエハサセプタ装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5119541A (en:Method) |
| JP (1) | JPS63186422A (en:Method) |
| WO (1) | WO1993013548A1 (en:Method) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07118466B2 (ja) * | 1988-12-26 | 1995-12-18 | 東芝セラミックス株式会社 | サセプタ |
| US5306895A (en) * | 1991-03-26 | 1994-04-26 | Ngk Insulators, Ltd. | Corrosion-resistant member for chemical apparatus using halogen series corrosive gas |
| US6090706A (en) * | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
| US5482749A (en) * | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
| JP2701767B2 (ja) * | 1995-01-27 | 1998-01-21 | 日本電気株式会社 | 気相成長装置 |
| SE9500326D0 (sv) * | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
| US6086680A (en) * | 1995-08-22 | 2000-07-11 | Asm America, Inc. | Low-mass susceptor |
| JPH10511507A (ja) * | 1995-10-20 | 1998-11-04 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 選択的に堆積された半導体領域を有する半導体装置の製造 |
| EP1036406B1 (en) * | 1997-11-03 | 2003-04-02 | ASM America, Inc. | Improved low mass wafer support system |
| US6410172B1 (en) | 1999-11-23 | 2002-06-25 | Advanced Ceramics Corporation | Articles coated with aluminum nitride by chemical vapor deposition |
| JP4374156B2 (ja) * | 2000-09-01 | 2009-12-02 | 日本碍子株式会社 | Iii−v族窒化物膜の製造装置及び製造方法 |
| JP3579344B2 (ja) * | 2000-11-15 | 2004-10-20 | 日本碍子株式会社 | Iiiv族窒化物膜の製造方法および製造装置 |
| US20050170314A1 (en) * | 2002-11-27 | 2005-08-04 | Richard Golden | Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design |
| US8603248B2 (en) * | 2006-02-10 | 2013-12-10 | Veeco Instruments Inc. | System and method for varying wafer surface temperature via wafer-carrier temperature offset |
| US8460764B2 (en) * | 2008-03-06 | 2013-06-11 | Georgia Tech Research Corporation | Method and apparatus for producing ultra-thin graphitic layers |
| JP5200171B2 (ja) * | 2008-08-29 | 2013-05-15 | ビーコ・インストゥルメンツ・インコーポレイテッド | ウエハキャリア、化学蒸着装置、および、ウエハを処理する方法 |
| US8801857B2 (en) | 2008-10-31 | 2014-08-12 | Asm America, Inc. | Self-centering susceptor ring assembly |
| US20110185969A1 (en) * | 2009-08-21 | 2011-08-04 | Varian Semiconductor Equipment Associates, Inc. | Dual heating for precise wafer temperature control |
| US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
| US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
| KR20160111521A (ko) | 2014-01-27 | 2016-09-26 | 비코 인스트루먼츠 인코포레이티드 | 화학적 기상 증착 시스템을 위한 복합 반경들을 갖는 유지 포켓들을 구비한 웨이퍼 캐리어 |
| USD920936S1 (en) | 2019-01-17 | 2021-06-01 | Asm Ip Holding B.V. | Higher temperature vented susceptor |
| USD914620S1 (en) | 2019-01-17 | 2021-03-30 | Asm Ip Holding B.V. | Vented susceptor |
| US11961756B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Vented susceptor |
| TWI845682B (zh) | 2019-05-22 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 工件基座主體 |
| JP7379993B2 (ja) * | 2019-09-20 | 2023-11-15 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
| CN112599463B (zh) * | 2019-10-02 | 2024-01-19 | 佳能株式会社 | 晶片卡盘、其生产方法和曝光装置 |
| US11764101B2 (en) | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
| TWI888578B (zh) | 2020-06-23 | 2025-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基座及反應腔室 |
| USD1031676S1 (en) | 2020-12-04 | 2024-06-18 | Asm Ip Holding B.V. | Combined susceptor, support, and lift system |
| CN112687597B (zh) * | 2020-12-25 | 2022-08-05 | 集美大学 | 一种高温基片退火架 |
| USD1030687S1 (en) * | 2022-05-31 | 2024-06-11 | Asm Ip Holding B.V. | Susceptor |
| USD1067204S1 (en) * | 2022-05-31 | 2025-03-18 | Asm Ip Holding B.V. | Susceptor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3783822A (en) * | 1972-05-10 | 1974-01-08 | J Wollam | Apparatus for use in deposition of films from a vapor phase |
| JPS50747A (en:Method) * | 1973-05-02 | 1975-01-07 | ||
| US3980854A (en) * | 1974-11-15 | 1976-09-14 | Rca Corporation | Graphite susceptor structure for inductively heating semiconductor wafers |
| JPS5185649U (en:Method) * | 1974-12-28 | 1976-07-09 | ||
| JPS5185649A (ja) * | 1975-01-24 | 1976-07-27 | Nippon Signal Co Ltd | Kinsentorokuki |
| JPS5381069A (en) * | 1976-12-27 | 1978-07-18 | Hitachi Ltd | Production of susceptor in cvd device |
| JPS62205619A (ja) * | 1986-03-06 | 1987-09-10 | Dainippon Screen Mfg Co Ltd | 半導体の加熱方法及びその方法に使用されるサセプタ |
| US4858558A (en) * | 1988-01-25 | 1989-08-22 | Nippon Kokan Kabushiki Kaisha | Film forming apparatus |
-
1987
- 1987-01-28 JP JP62019348A patent/JPS63186422A/ja active Granted
-
1988
- 1988-01-28 US US07/391,556 patent/US5119541A/en not_active Expired - Fee Related
- 1988-01-28 WO PCT/JP1988/000067 patent/WO1993013548A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US5119541A (en) | 1992-06-09 |
| WO1993013548A1 (fr) | 1993-07-08 |
| JPS63186422A (ja) | 1988-08-02 |
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