JPH0530065B2 - - Google Patents
Info
- Publication number
- JPH0530065B2 JPH0530065B2 JP7294883A JP7294883A JPH0530065B2 JP H0530065 B2 JPH0530065 B2 JP H0530065B2 JP 7294883 A JP7294883 A JP 7294883A JP 7294883 A JP7294883 A JP 7294883A JP H0530065 B2 JPH0530065 B2 JP H0530065B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- insulating film
- wiring
- etching
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- VSSLEOGOUUKTNN-UHFFFAOYSA-N tantalum titanium Chemical compound [Ti].[Ta] VSSLEOGOUUKTNN-UHFFFAOYSA-N 0.000 description 1
- -1 tungsden Chemical compound 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7294883A JPS59200439A (ja) | 1983-04-27 | 1983-04-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7294883A JPS59200439A (ja) | 1983-04-27 | 1983-04-27 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59200439A JPS59200439A (ja) | 1984-11-13 |
| JPH0530065B2 true JPH0530065B2 (ko) | 1993-05-07 |
Family
ID=13504110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7294883A Granted JPS59200439A (ja) | 1983-04-27 | 1983-04-27 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59200439A (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2699389B2 (ja) * | 1988-03-25 | 1998-01-19 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH04226054A (ja) * | 1990-03-02 | 1992-08-14 | Toshiba Corp | 多層配線構造を有する半導体装置及びその製造方法 |
| US5243220A (en) * | 1990-03-23 | 1993-09-07 | Kabushiki Kaisha Toshiba | Semiconductor device having miniaturized contact electrode and wiring structure |
| US5286674A (en) * | 1992-03-02 | 1994-02-15 | Motorola, Inc. | Method for forming a via structure and semiconductor device having the same |
| US5702981A (en) * | 1995-09-29 | 1997-12-30 | Maniar; Papu D. | Method for forming a via in a semiconductor device |
-
1983
- 1983-04-27 JP JP7294883A patent/JPS59200439A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59200439A (ja) | 1984-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7084508B2 (en) | Semiconductor device with multiple layer insulating film | |
| KR100489978B1 (ko) | 도핑처리된 이산화규소의 선택적인 에칭을 위한 에칭스톱제로서의 비도핑처리된 이산화규소 | |
| US4396460A (en) | Method of forming groove isolation in a semiconductor device | |
| US5109267A (en) | Method for producing an integrated circuit structure with a dense multilayer metallization pattern | |
| EP0127946A1 (en) | Method of producing a via in a semiconductor device | |
| JPH0563940B2 (ko) | ||
| US5683938A (en) | Method for filling contact holes with metal by two-step deposition | |
| JPH0332215B2 (ko) | ||
| JP2671380B2 (ja) | 半導体装置の製造方法 | |
| JPH0530065B2 (ko) | ||
| US6376357B1 (en) | Method for manufacturing a semiconductor device with voids in the insulation film between wirings | |
| US4749663A (en) | Process of fabricating a semiconductor IC involving simultaneous sputter etching and deposition | |
| JP3439135B2 (ja) | 半導体装置の製造方法及び半導体装置 | |
| JPH09306992A (ja) | 半導体装置およびその製造方法 | |
| JPH0483336A (ja) | 半導体装置の製造方法 | |
| JPH0570938B2 (ko) | ||
| JPH07235594A (ja) | 半導体装置の製造方法 | |
| JPS6366425B2 (ko) | ||
| KR100352304B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| EP0646954A2 (en) | Low-defect one-step etching process | |
| JPH01296644A (ja) | 半導体装置の製造方法 | |
| KR19990076226A (ko) | 디램 셀 커패시터의 제조 방법 | |
| KR100506871B1 (ko) | 글래스층을 이용한 스토리지 노드 형성 방법 | |
| KR100211544B1 (ko) | 반도체 소자의 캐패시터 제조방법 | |
| JPH04127425A (ja) | 半導体集積回路の製造方法 |