JPH0529994B2 - - Google Patents

Info

Publication number
JPH0529994B2
JPH0529994B2 JP1270500A JP27050089A JPH0529994B2 JP H0529994 B2 JPH0529994 B2 JP H0529994B2 JP 1270500 A JP1270500 A JP 1270500A JP 27050089 A JP27050089 A JP 27050089A JP H0529994 B2 JPH0529994 B2 JP H0529994B2
Authority
JP
Japan
Prior art keywords
stage
pair
sense amplifier
transistors
differential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1270500A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02158998A (ja
Inventor
Rufuoresuteie Shirubeen
Ome Dominiiku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH02158998A publication Critical patent/JPH02158998A/ja
Publication of JPH0529994B2 publication Critical patent/JPH0529994B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP1270500A 1988-10-28 1989-10-19 ２段式センス増幅回路 Granted JPH02158998A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP88480066A EP0365730B1 (en) 1988-10-28 1988-10-28 Double stage bipolar sense amplifier for BICMOS SRAMS with a common base amplifier in the final stage
EP88480066.5 1988-10-28

Publications (2)

Publication Number Publication Date
JPH02158998A JPH02158998A (ja) 1990-06-19
JPH0529994B2 true JPH0529994B2 (enrdf_load_stackoverflow) 1993-05-06

Family

ID=8200502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1270500A Granted JPH02158998A (ja) 1988-10-28 1989-10-19 ２段式センス増幅回路

Country Status (4)

Country Link
US (1) US5172340A (enrdf_load_stackoverflow)
EP (1) EP0365730B1 (enrdf_load_stackoverflow)
JP (1) JPH02158998A (enrdf_load_stackoverflow)
DE (1) DE3850970T2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469894A (ja) * 1990-07-09 1992-03-05 Fujitsu Ltd 半導体記憶装置
JP2616198B2 (ja) * 1990-10-01 1997-06-04 日本電気株式会社 半導体メモリ回路
JP2715004B2 (ja) * 1991-01-07 1998-02-16 三菱電機株式会社 半導体メモリ装置
JP2939027B2 (ja) * 1991-10-31 1999-08-25 三菱電機株式会社 半導体記憶装置
US5878269A (en) * 1992-03-27 1999-03-02 National Semiconductor Corporation High speed processor for operation at reduced operating voltage
US5341333A (en) * 1992-08-11 1994-08-23 Integrated Device Technology, Inc. Circuits and methods for amplification of electrical signals
US6492211B1 (en) 2000-09-07 2002-12-10 International Business Machines Corporation Method for novel SOI DRAM BICMOS NPN
KR100666181B1 (ko) * 2005-12-27 2007-01-09 삼성전자주식회사 센스앰프 및 워드라인 드라이버 영역을 위한 면적을최소화하는 레이아웃을 가지는 반도체 메모리 장치
US7986189B1 (en) 2010-04-29 2011-07-26 Freescale Semiconductor, Inc. Amplifier with feedback

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2460146C3 (de) * 1974-12-19 1981-11-05 Ibm Deutschland Gmbh, 7000 Stuttgart Bipolare Leseschaltung für integrierte Speichermatrix
DE2926514A1 (de) * 1979-06-30 1981-01-15 Ibm Deutschland Elektrische speicheranordnung und verfahren zu ihrem betrieb
JPS59914B2 (ja) * 1979-08-23 1984-01-09 富士通株式会社 半導体記憶装置
JPS6028076B2 (ja) * 1980-12-25 1985-07-02 富士通株式会社 半導体メモリの書込み回路
US4553053A (en) * 1983-10-03 1985-11-12 Honeywell Information Systems Inc. Sense amplifier
JPS628394A (ja) * 1985-07-03 1987-01-16 Hitachi Ltd センス回路
JPS62117190A (ja) * 1985-11-15 1987-05-28 Hitachi Ltd 半導体記憶装置
KR0141494B1 (ko) * 1988-01-28 1998-07-15 미다 가쓰시게 레벨시프트회로를 사용한 고속센스 방식의 반도체장치
ES2022698B3 (es) * 1988-02-26 1991-12-01 Ibm Amplificador de sentido de doble fase para memorias de acceso aleatorias.
US4984196A (en) * 1988-05-25 1991-01-08 Texas Instruments, Incorporated High performance bipolar differential sense amplifier in a BiCMOS SRAM

Also Published As

Publication number Publication date
US5172340A (en) 1992-12-15
DE3850970D1 (de) 1994-09-08
EP0365730A1 (en) 1990-05-02
JPH02158998A (ja) 1990-06-19
DE3850970T2 (de) 1995-03-16
EP0365730B1 (en) 1994-08-03

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