JPH05299484A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPH05299484A
JPH05299484A JP4099607A JP9960792A JPH05299484A JP H05299484 A JPH05299484 A JP H05299484A JP 4099607 A JP4099607 A JP 4099607A JP 9960792 A JP9960792 A JP 9960792A JP H05299484 A JPH05299484 A JP H05299484A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor wafer
circuit forming
forming portion
probe card
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4099607A
Other languages
Japanese (ja)
Inventor
Sosaku Sawada
宗作 澤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP4099607A priority Critical patent/JPH05299484A/en
Publication of JPH05299484A publication Critical patent/JPH05299484A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square

Abstract

PURPOSE:To provide a semiconductor wafer capable of making the probing easier while maintaining an area for an integrated circuit-forming portion. CONSTITUTION:A scribe line 5 is interposed between an integrated circuit forming portion 2 arranged in a plurality of rows to semiconductor wafer 1 and a plurality of integrated circuit forming portion 2 formed to the semiconductor wafers 1; and testing pads 6 for measuring by touching a probe card are enlarged and extended on mounting pads 4 to scribe line 5 located at the peripheral edge of the integrated circuit forming portion 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、集積回路形成部の面積
を維持しつつプローピングが容易なパッド配置を獲得し
得る半導体ウェハの改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a semiconductor wafer capable of obtaining a pad arrangement which facilitates propping while maintaining the area of an integrated circuit forming portion.

【0002】[0002]

【従来の技術】半導体の集積回路形成部は周知の如く、
1枚のウェハ内に多数個規則的に配列して配設される
と、プローブカードで個々に接触測定され、不良品にマ
ークインクを付けて良否が分類された後、それぞれがパ
ッケージに組み込むため個々に分割される。
2. Description of the Related Art As is well known in the field of semiconductor integrated circuit formation,
When a large number of wafers are regularly arranged in a single wafer, they are individually contact-measured with a probe card, defective ink is marked with mark ink to classify them, and then each is incorporated into the package. Individually divided.

【0003】ところで、従来においては、プローブカー
ドで集積回路形成部を個々に接触測定する際、プローブ
カードに接触測定されるテスト用パッドが存在しなかっ
たので、テスト用パッドの代わりに、集積回路形成部の
多数の小さな実装用パッドにプローブカードを接触させ
て測定していた。
[0003] By the way, in the past, when contact measurement of the integrated circuit forming portion was individually performed by the probe card, there was no test pad for contact measurement on the probe card. Therefore, instead of the test pad, the integrated circuit was used. The measurement was performed by bringing the probe card into contact with many small mounting pads in the forming portion.

【0004】[0004]

【発明が解決しようとする課題】従来の半導体の組立に
おいては以上のように、テスト用パッドの代わりに、集
積回路形成部の多数の小さな実装用パッドにプローブカ
ードを接触させて測定していたので、例えば、フリップ
チップ用に配設された実装用パッドにプローブカードを
接触させることが非常に困難であった。換言すれば、高
集積化に伴い実装用パッドが縮小しつつ増加するので、
この縮小しつつ増加した実装用パッドにプローブカード
を接触させることが非常に困難であり、しかも、接触測
定の際、プローブカードで実装用パッドを損傷させる虞
れがあった。
As described above, in the conventional semiconductor assembly, the probe card is contacted with a large number of small mounting pads of the integrated circuit forming portion instead of the test pads for measurement. Therefore, for example, it is very difficult to bring the probe card into contact with the mounting pad provided for the flip chip. In other words, as the number of mounting pads shrinks and increases with higher integration,
It is very difficult to bring the probe card into contact with the mounting pad that has been reduced in size and increased, and there is a possibility that the mounting pad may be damaged by the probe card during contact measurement.

【0005】本発明は上記に鑑みなされたもので、集積
回路形成部の面積を維持しつつ、プローピングの容易化
を図り得る半導体ウェハを提供することを目的としてい
る。
The present invention has been made in view of the above, and an object thereof is to provide a semiconductor wafer capable of facilitating propping while maintaining an area of an integrated circuit forming portion.

【0006】[0006]

【課題を解決するための手段】本発明においては上述の
目的を達成するため、半導体のウェハに複数配列して配
設された集積回路形成部と、該半導体のウェハに形成さ
れ複数の集積回路形成部の間に介在する分割ラインとを
備え、しかも、分割ライン上に、プローブに接触測定さ
れるテスト用パッドを集積回路形成部の実装用パッドと
は別に配設したことを特徴としている。
In order to achieve the above-mentioned object in the present invention, a plurality of integrated circuit forming portions arranged on a semiconductor wafer are arranged, and a plurality of integrated circuits formed on the semiconductor wafer. It is characterized in that a dividing line interposed between the forming portions is provided, and a test pad for contact measurement with the probe is arranged on the dividing line separately from the mounting pad of the integrated circuit forming portion.

【0007】また、本発明においては上述の目的を達成
するため、半導体のウェハに複数配列して配設された集
積回路形成部と、該半導体のウェハに形成され複数の集
積回路形成部の間に介在する分割ラインとを備え、しか
も、集積回路形成部の周縁に位置する実装用パッドから
分割ライン上に、プローブに接触測定されるテスト用パ
ッドを拡張して延設したことを特徴としている。
In order to achieve the above-mentioned object in the present invention, a plurality of integrated circuit forming portions arranged on a semiconductor wafer are arranged between the plurality of integrated circuit forming portions formed on the semiconductor wafer. And a test line to be measured by contact with the probe is extended from the mounting pad located on the peripheral edge of the integrated circuit forming portion to the test line. ..

【0008】[0008]

【作用】本発明によれば、高密度又は規則性の欠如した
実装用パッドにプローブカードを接触させる代わりに、
スクライブライン上に拡張して延設されたテスト用パッ
ドにプローブカードを接触させてテストするので、プロ
ーピングが極めて容易となり、しかも、チップ面積の拡
張を確実に防止することが可能になるとともに、接触測
定の際、プローブカードで実装用パッドを損傷させる虞
れを確実に排除することが期待できる。
According to the present invention, instead of contacting the probe card with a mounting pad having a high density or lacking regularity,
Testing is performed by contacting the probe card with the test pad extended and extended on the scribe line, so propping is extremely easy, and it is possible to reliably prevent expansion of the chip area and to make contact. At the time of measurement, it can be expected that the risk of damaging the mounting pad with the probe card can be reliably eliminated.

【0009】[0009]

【実施例】以下、図1及び図2に示す一実施例に基づき
本発明を詳述すると、本発明に係る半導体ウェハは図2
に示す如く、例えばGaAsからなるウェハ1の集積回
路形成部2の実装用パッド4からスクライブライン5上
に、プローブカードに接触測定されるテスト用パッド6
を延設している。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to one embodiment shown in FIGS. 1 and 2.
As shown in FIG. 2, a test pad 6 which is contact-measured with a probe card on the scribe line 5 from the mounting pad 4 of the integrated circuit forming portion 2 of the wafer 1 made of GaAs, for example.
Has been extended.

【0010】上記集積回路形成部2は図1に示す如く、
GaAsからなるウェハ1内に多数個縦横に規則的に配
列して配設され、半導体集積回路3が形成されており、
この半導体集積回路3の周縁から外周方向に複数の実装
用パッド4が非規則的に延設されている。また、上記ス
クライブライン(分割ライン)5は同図に示す如く、ウ
ェハ1に形成され、複数の半導体集積回路形成部2の間
に略格子形に介在して位置しており、半導体集積回路形
成部2の分割時に使用されるようになっている。 さら
に、上記テスト用パッド6は図2に示す如く、複数の実
装用パッド4それぞれからスクライブライン5上に規則
的に延設されるとともに、実装用パッド4よりも拡張し
て構成され、半導体集積回路形成部2の良否分類時に実
装用パッド4の代わりに、図示しないプローブカードで
個々に接触測定されるようになっている。
As shown in FIG. 1, the integrated circuit forming section 2 is as follows.
A large number of semiconductor wafers 1 made of GaAs are regularly arranged in rows and columns to form semiconductor integrated circuits 3.
A plurality of mounting pads 4 are irregularly extended from the peripheral edge of the semiconductor integrated circuit 3 in the outer peripheral direction. Further, the scribe lines (division lines) 5 are formed on the wafer 1 as shown in the same figure, and are located between the plurality of semiconductor integrated circuit forming portions 2 in a substantially lattice pattern. It is designed to be used when the part 2 is divided. Further, as shown in FIG. 2, the test pad 6 is regularly extended from each of the plurality of mounting pads 4 on the scribe line 5 and is expanded from the mounting pad 4, and is configured as a semiconductor integrated circuit. Instead of the mounting pads 4 at the time of classifying the circuit forming portion 2, contact measurement is individually performed with a probe card (not shown).

【0011】上記構成によれば、高密度又は規則性の欠
如した実装用パッド4にプローブカードを接触させる代
わりに、スクライブライン5上の規則性を有して拡張し
たテスト用パッド6にプローブカードを接触させてテス
トするので、プローピングが極めて容易となり、しか
も、チップ面積の拡張を確実に防止することが可能とな
る。
According to the above configuration, instead of contacting the probe card with the mounting pad 4 having high density or lacking regularity, the test card 6 having regularity and expanded on the scribe line 5 is attached to the probe card. Since the test is performed by contacting with each other, the propping is extremely easy and the expansion of the chip area can be surely prevented.

【0012】また、接触測定の際、プローブカードで実
装用パッド4を損傷させる虞れを確実に排除することが
期待できる。
Further, it is expected that the risk of damaging the mounting pad 4 with the probe card can be reliably eliminated during the contact measurement.

【0013】尚、上記実施例ではGaAsからなるウェ
ハ1を使用するものを示したが、Siからなるウェハ1
を使用しても上記実施例と同様の作用効果が期待でき
る。また、上記実施例ではウェハ1にスクライブライン
5を形成するものを示したが、ダイシングラインを形成
しても良い。
Although the wafer 1 made of GaAs is used in the above embodiment, the wafer 1 made of Si is used.
Even if it is used, the same effect as that of the above-mentioned embodiment can be expected. Further, although the scribe line 5 is formed on the wafer 1 in the above embodiment, the dicing line may be formed.

【0014】さらに、上記実施例ではテスト用パッド6
を複数の実装用パッド4それぞれからスクライブライン
5上に規則的に延設したものを示したが、テスト用パッ
ド6を一部の実装用パッド4からスクライブライン5上
に規則的に延設したり、図2の下部左側部に示す如く、
集中配置されていない実装用パッド4からテスト用パッ
ド6を拡張形成したりしても良いのは言うまでもない。
Further, in the above embodiment, the test pad 6 is used.
In FIG. 4, the test pads 6 are regularly extended from the plurality of mounting pads 4 on the scribe line 5, but the test pads 6 are regularly extended from some of the mounting pads 4 to the scribe line 5. Or, as shown in the lower left part of FIG.
It goes without saying that the test pads 6 may be extended from the mounting pads 4 that are not centrally arranged.

【0015】[0015]

【発明の効果】以上のように本発明によれば、分割ライ
ン上に、プローブに接触測定されるテスト用パッドを集
積回路形成部の実装用パッドとは別に配設しているの
で、プローピングが極めて容易となり、しかも、チップ
面積の拡張を確実に防止することが可能となるという顕
著な効果がある。また、接触測定の際、プローブカード
で実装用パッド4を損傷させる虞れを確実に排除するこ
とが期待できるという顕著な効果がある。
As described above, according to the present invention, the test pad for contact measurement with the probe is arranged on the dividing line separately from the mounting pad of the integrated circuit forming portion, so that the propping is performed. There is a remarkable effect that it becomes extremely easy and, moreover, the expansion of the chip area can be surely prevented. Further, there is a remarkable effect that it is possible to surely eliminate the risk of damaging the mounting pad 4 with the probe card during contact measurement.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る半導体ウェハの一実施例を示す全
体説明図である。
FIG. 1 is an overall explanatory view showing an embodiment of a semiconductor wafer according to the present invention.

【図2】図1のII部を拡大して示す要部拡大説明図で
ある。
FIG. 2 is an enlarged explanatory view of a main part showing an enlarged part II of FIG.

【符号の説明】[Explanation of symbols]

1…ウェハ、2…集積回路形成部、3…半導体集積回
路、4…実装用パッド、5…スクライブライン(分割ラ
イン)、6…テスト用パッド。
1 ... Wafer, 2 ... Integrated circuit forming part, 3 ... Semiconductor integrated circuit, 4 ... Mounting pad, 5 ... Scribing line (dividing line), 6 ... Test pad.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体のウェハに複数配列して配設され
た集積回路形成部と、該半導体のウェハに形成され複数
の集積回路形成部の間に介在する分割ラインとを備えた
半導体ウェハにおいて、上記分割ライン上に、プローブ
に接触測定されるテスト用パッドを集積回路形成部の実
装用パッドとは別に配設したことを特徴とする半導体ウ
ェハ。
1. A semiconductor wafer comprising a plurality of integrated circuit forming portions arranged on a semiconductor wafer and dividing lines formed on the semiconductor wafer and interposed between the plurality of integrated circuit forming portions. A semiconductor wafer, wherein a test pad to be contact-measured with a probe is provided separately from the mounting pad of the integrated circuit forming portion on the dividing line.
【請求項2】 半導体のウェハに複数配列して配設され
た集積回路形成部と、該半導体のウェハに形成され複数
の集積回路形成部の間に介在する分割ラインとを備えた
半導体ウェハにおいて、上記集積回路形成部の周縁に位
置する実装用パッドから分割ライン上に、プローブに接
触測定されるテスト用パッドを拡張して延設したことを
特徴とする半導体ウェハ。
2. A semiconductor wafer comprising an integrated circuit forming portion arranged in a plurality on a semiconductor wafer and dividing lines formed between the plurality of integrated circuit forming portions formed on the semiconductor wafer. A semiconductor wafer, in which a test pad for contact measurement with a probe is extended and extended from a mounting pad located at a peripheral edge of the integrated circuit forming portion on a division line.
JP4099607A 1992-04-20 1992-04-20 Semiconductor wafer Pending JPH05299484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4099607A JPH05299484A (en) 1992-04-20 1992-04-20 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4099607A JPH05299484A (en) 1992-04-20 1992-04-20 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH05299484A true JPH05299484A (en) 1993-11-12

Family

ID=14251786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4099607A Pending JPH05299484A (en) 1992-04-20 1992-04-20 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH05299484A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997012395A1 (en) * 1995-09-27 1997-04-03 Micrel, Inc. Circuit having trim pads formed in scribe channel
US5982042A (en) * 1996-03-18 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer including semiconductor device
US6291835B1 (en) * 1999-05-26 2001-09-18 Yamaha Corporation Semiconductor device
KR100688722B1 (en) * 2002-04-18 2007-02-28 동부일렉트로닉스 주식회사 Apparatus for monitoring a guard-ring in a semiconductor device
KR100801529B1 (en) * 2006-02-28 2008-02-12 후지쯔 가부시끼가이샤 Testing circuit and testing method for semiconductor device and semiconductor chip
US7825446B2 (en) 2006-01-18 2010-11-02 Fujitsu Semiconductor Limited Semiconductor device, semiconductor wafer structure and method for manufacturing the semiconductor wafer structure

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997012395A1 (en) * 1995-09-27 1997-04-03 Micrel, Inc. Circuit having trim pads formed in scribe channel
US5710538A (en) * 1995-09-27 1998-01-20 Micrel, Inc. Circuit having trim pads formed in scribe channel
US5982042A (en) * 1996-03-18 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer including semiconductor device
CN1095197C (en) * 1996-03-18 2002-11-27 三菱电机株式会社 Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device
US6291835B1 (en) * 1999-05-26 2001-09-18 Yamaha Corporation Semiconductor device
KR100688722B1 (en) * 2002-04-18 2007-02-28 동부일렉트로닉스 주식회사 Apparatus for monitoring a guard-ring in a semiconductor device
US7825446B2 (en) 2006-01-18 2010-11-02 Fujitsu Semiconductor Limited Semiconductor device, semiconductor wafer structure and method for manufacturing the semiconductor wafer structure
KR100801529B1 (en) * 2006-02-28 2008-02-12 후지쯔 가부시끼가이샤 Testing circuit and testing method for semiconductor device and semiconductor chip

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