JPH0529302B2 - - Google Patents

Info

Publication number
JPH0529302B2
JPH0529302B2 JP63222607A JP22260788A JPH0529302B2 JP H0529302 B2 JPH0529302 B2 JP H0529302B2 JP 63222607 A JP63222607 A JP 63222607A JP 22260788 A JP22260788 A JP 22260788A JP H0529302 B2 JPH0529302 B2 JP H0529302B2
Authority
JP
Japan
Prior art keywords
radiation
computer
sensitive
film
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63222607A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6472525A (en
Inventor
Eichi Jigaa Debitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of JPS6472525A publication Critical patent/JPS6472525A/ja
Publication of JPH0529302B2 publication Critical patent/JPH0529302B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP63222607A 1987-09-08 1988-09-07 Manufacture of device Granted JPS6472525A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/093,656 US4814243A (en) 1987-09-08 1987-09-08 Thermal processing of photoresist materials

Publications (2)

Publication Number Publication Date
JPS6472525A JPS6472525A (en) 1989-03-17
JPH0529302B2 true JPH0529302B2 (enExample) 1993-04-30

Family

ID=22240077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63222607A Granted JPS6472525A (en) 1987-09-08 1988-09-07 Manufacture of device

Country Status (2)

Country Link
US (1) US4814243A (enExample)
JP (1) JPS6472525A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186788A (en) * 1987-07-23 1993-02-16 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
US5286609A (en) * 1988-11-01 1994-02-15 Yamatoya & Co., Ltd. Process for the formation of a negative resist pattern from a composition comprising a diazoquinone compound and an imidazole and having as a heat step the use of a hot water containing spray
US5126232A (en) * 1989-05-26 1992-06-30 Seagate Technology, Inc. Pole design for thin film magnetic heads
IT1231108B (it) * 1989-08-10 1991-11-18 Sgs Thomson Microelectronics Procedimento litografico ad alta risoluzione per la produzione di circuiti integrati monolitici.
US5236811A (en) * 1990-04-19 1993-08-17 Mitsubishi Denki Kabushiki Kaisha Method of producing a λ/4-shifted diffraction grating
JP2519819B2 (ja) * 1990-05-09 1996-07-31 株式会社東芝 コンタクトホ―ルの形成方法
US5652084A (en) * 1994-12-22 1997-07-29 Cypress Semiconductor Corporation Method for reduced pitch lithography
US5955242A (en) * 1996-09-23 1999-09-21 International Business Machines Corporation High sensitivity, photo-active polymer and developers for high resolution resist applications
US5849582A (en) * 1997-05-01 1998-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Baking of photoresist on wafers
US6095882A (en) 1999-02-12 2000-08-01 Micron Technology, Inc. Method for forming emitters for field emission displays
JP5107329B2 (ja) * 2009-10-14 2012-12-26 東京エレクトロン株式会社 現像処理方法
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
KR102731166B1 (ko) 2018-12-20 2024-11-18 램 리써치 코포레이션 레지스트들의 건식 현상 (dry development)
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP7589179B2 (ja) * 2019-06-28 2024-11-25 ラム リサーチ コーポレーション 金属含有レジストのリソグラフィ性能を向上させるためのベーキング方法
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
US12436464B2 (en) 2020-04-03 2025-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance EUV lithographic performance
CN115004110A (zh) 2020-07-07 2022-09-02 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
CN115152008A (zh) 2020-11-13 2022-10-04 朗姆研究公司 用于干法去除光致抗蚀剂的处理工具

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4248036A (en) * 1979-03-08 1981-02-03 E. I. Du Pont De Nemours And Company Bulky yarn
DE3231147A1 (de) * 1982-08-21 1984-02-23 Basf Ag, 6700 Ludwigshafen Positiv arbeitendes verfahren zur herstellung von reliefbildern oder resistmustern
KR860002082B1 (ko) * 1983-01-19 1986-11-24 가부시기가이샤 도시바 레지스트 패턴의 형성 방법 및 장치
US4569717A (en) * 1983-05-24 1986-02-11 Dainippon Screen Mfg. Co., Ltd. Method of surface treatment
US4567132A (en) * 1984-03-16 1986-01-28 International Business Machines Corporation Multi-level resist image reversal lithography process
US4568631A (en) * 1984-04-30 1986-02-04 International Business Machines Corporation Process for delineating photoresist lines at pattern edges only using image reversal composition with diazoquinone
JPS60249146A (ja) * 1984-05-25 1985-12-09 Fuji Photo Film Co Ltd 画像記録方法
US4647172A (en) * 1985-05-17 1987-03-03 Gca Corporation Resist development method

Also Published As

Publication number Publication date
JPS6472525A (en) 1989-03-17
US4814243A (en) 1989-03-21

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