JPH05282875A - 内部データバス線用トライステート可能ドライバ - Google Patents
内部データバス線用トライステート可能ドライバInfo
- Publication number
- JPH05282875A JPH05282875A JP4336481A JP33648192A JPH05282875A JP H05282875 A JPH05282875 A JP H05282875A JP 4336481 A JP4336481 A JP 4336481A JP 33648192 A JP33648192 A JP 33648192A JP H05282875 A JPH05282875 A JP H05282875A
- Authority
- JP
- Japan
- Prior art keywords
- pull
- transistor
- data
- sense
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 155
- 230000015654 memory Effects 0.000 claims description 72
- 230000000295 complement effect Effects 0.000 claims description 20
- 238000001514 detection method Methods 0.000 claims description 15
- 230000004044 response Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 description 11
- 239000000872 buffer Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011067 equilibration Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- HOZOZZFCZRXYEK-GSWUYBTGSA-M butylscopolamine bromide Chemical compound [Br-].C1([C@@H](CO)C(=O)O[C@H]2C[C@@H]3[N+]([C@H](C2)[C@@H]2[C@H]3O2)(C)CCCC)=CC=CC=C1 HOZOZZFCZRXYEK-GSWUYBTGSA-M 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
Landscapes
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80939291A | 1991-12-17 | 1991-12-17 | |
| US809392 | 2001-03-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05282875A true JPH05282875A (ja) | 1993-10-29 |
Family
ID=25201241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4336481A Pending JPH05282875A (ja) | 1991-12-17 | 1992-12-17 | 内部データバス線用トライステート可能ドライバ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5748556A (enExample) |
| EP (1) | EP0547889B1 (enExample) |
| JP (1) | JPH05282875A (enExample) |
| DE (1) | DE69228919T2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3220027B2 (ja) * | 1996-11-01 | 2001-10-22 | 日本電気株式会社 | 半導体記憶装置 |
| US5835440A (en) * | 1997-08-06 | 1998-11-10 | Micron Technology, Inc. | Memory device equilibration circuit and method |
| JP3784979B2 (ja) * | 1999-02-09 | 2006-06-14 | 株式会社東芝 | バス駆動回路 |
| JP3924107B2 (ja) * | 2000-03-09 | 2007-06-06 | 富士通株式会社 | 半導体集積回路 |
| KR100360021B1 (ko) * | 2000-09-25 | 2002-11-07 | 삼성전자 주식회사 | 반도체 메모리 장치 및 이 장치의 비트 라인 분리 게이트배치방법 |
| US6549471B1 (en) | 2002-02-11 | 2003-04-15 | Micron Technology, Inc. | Adiabatic differential driver |
| CA2526467C (en) * | 2003-05-20 | 2015-03-03 | Kagutech Ltd. | Digital backplane recursive feedback control |
| JP4066357B2 (ja) * | 2003-06-24 | 2008-03-26 | 松下電器産業株式会社 | 半導体記憶装置 |
| US7196942B2 (en) * | 2004-10-20 | 2007-03-27 | Stmicroelectronics Pvt. Ltd. | Configuration memory structure |
| US7286385B2 (en) * | 2005-07-27 | 2007-10-23 | International Business Machines Corporation | Differential and hierarchical sensing for memory circuits |
| KR100752650B1 (ko) | 2006-01-13 | 2007-08-29 | 삼성전자주식회사 | 데이터 버스라인의 부하를 감소시키기 위한 트라이스테이트 출력 드라이버 배치방법 및 이를 이용하는 반도체메모리장치 |
| US20100172198A1 (en) * | 2008-12-30 | 2010-07-08 | Stmicroelectronics Pvt. Ltd. | Data storage element sensing device |
| US8120968B2 (en) * | 2010-02-12 | 2012-02-21 | International Business Machines Corporation | High voltage word line driver |
| US9117547B2 (en) | 2013-05-06 | 2015-08-25 | International Business Machines Corporation | Reduced stress high voltage word line driver |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3953839A (en) * | 1975-04-10 | 1976-04-27 | International Business Machines Corporation | Bit circuitry for enhance-deplete ram |
| US4077031A (en) * | 1976-08-23 | 1978-02-28 | Texas Instruments Incorporated | High speed address buffer for semiconductor memory |
| US4797573A (en) * | 1984-11-21 | 1989-01-10 | Nec Corporation | Output circuit with improved timing control circuit |
| JPS621191A (ja) * | 1985-03-11 | 1987-01-07 | Nec Ic Microcomput Syst Ltd | 信号出力回路 |
| JPS62167698A (ja) * | 1986-01-20 | 1987-07-24 | Fujitsu Ltd | 半導体記億装置 |
| KR890003488B1 (ko) * | 1986-06-30 | 1989-09-22 | 삼성전자 주식회사 | 데이터 전송회로 |
| NL8602295A (nl) * | 1986-09-11 | 1988-04-05 | Philips Nv | Halfgeleidergeheugenschakeling met snelle uitleesversterker tristatebusdrijver. |
| US4845681A (en) * | 1987-10-02 | 1989-07-04 | Honeywell Inc. | GaAs SCFL RAM |
| JPH0817037B2 (ja) * | 1987-12-03 | 1996-02-21 | 松下電子工業株式会社 | スタティックramの出力回路 |
| JPH0646513B2 (ja) * | 1989-07-12 | 1994-06-15 | 株式会社東芝 | 半導体記憶装置のデータ読出回路 |
-
1992
- 1992-12-16 DE DE69228919T patent/DE69228919T2/de not_active Expired - Fee Related
- 1992-12-16 EP EP92311511A patent/EP0547889B1/en not_active Expired - Lifetime
- 1992-12-17 JP JP4336481A patent/JPH05282875A/ja active Pending
-
1996
- 1996-12-31 US US08/777,836 patent/US5748556A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69228919T2 (de) | 1999-08-26 |
| EP0547889B1 (en) | 1999-04-14 |
| EP0547889A3 (enExample) | 1994-02-16 |
| EP0547889A2 (en) | 1993-06-23 |
| US5748556A (en) | 1998-05-05 |
| DE69228919D1 (de) | 1999-05-20 |
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