JPH0526770Y2 - - Google Patents

Info

Publication number
JPH0526770Y2
JPH0526770Y2 JP1986120136U JP12013686U JPH0526770Y2 JP H0526770 Y2 JPH0526770 Y2 JP H0526770Y2 JP 1986120136 U JP1986120136 U JP 1986120136U JP 12013686 U JP12013686 U JP 12013686U JP H0526770 Y2 JPH0526770 Y2 JP H0526770Y2
Authority
JP
Japan
Prior art keywords
conductivity type
layer
type region
electrode metal
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1986120136U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6327061U (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986120136U priority Critical patent/JPH0526770Y2/ja
Publication of JPS6327061U publication Critical patent/JPS6327061U/ja
Application granted granted Critical
Publication of JPH0526770Y2 publication Critical patent/JPH0526770Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W72/90
    • H10W72/07551
    • H10W72/50
    • H10W72/536
    • H10W72/59
    • H10W72/932
    • H10W72/934

Landscapes

  • Thyristors (AREA)
  • Wire Bonding (AREA)
JP1986120136U 1986-08-05 1986-08-05 Expired - Lifetime JPH0526770Y2 (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986120136U JPH0526770Y2 (enExample) 1986-08-05 1986-08-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986120136U JPH0526770Y2 (enExample) 1986-08-05 1986-08-05

Publications (2)

Publication Number Publication Date
JPS6327061U JPS6327061U (enExample) 1988-02-22
JPH0526770Y2 true JPH0526770Y2 (enExample) 1993-07-07

Family

ID=31008172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986120136U Expired - Lifetime JPH0526770Y2 (enExample) 1986-08-05 1986-08-05

Country Status (1)

Country Link
JP (1) JPH0526770Y2 (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468162A (en) * 1977-11-11 1979-06-01 Hitachi Ltd Semiconductor device
JPS5866654U (ja) * 1981-10-29 1983-05-06 日本電気株式会社 ガラスパツシベ−シヨン型半導体装置
JPS5895865A (ja) * 1981-12-02 1983-06-07 Hitachi Ltd ゲ−トタ−ンオフサイリスタ

Also Published As

Publication number Publication date
JPS6327061U (enExample) 1988-02-22

Similar Documents

Publication Publication Date Title
US4155155A (en) Method of manufacturing power semiconductors with pressed contacts
JPH02302044A (ja) 半導体装置の製造方法
US4197631A (en) Method of manufacturing semiconductor components
US5888889A (en) Integrated structure pad assembly for lead bonding
US3408271A (en) Electrolytic plating of metal bump contacts to semiconductor devices upon nonconductive substrates
JPH0526770Y2 (enExample)
US7397126B2 (en) Semiconductor device
US4672415A (en) Power thyristor on a substrate
US4320571A (en) Stencil mask process for high power, high speed controlled rectifiers
JPH0728026B2 (ja) 半導体装置の製造方法
JPS5923115B2 (ja) メサ型半導体装置
US3703667A (en) Shaped riser on substrate step for promoting metal film continuity
CN116504829A (zh) 一种多层场板的ldmos器件结构及其制作方法
JP3198761B2 (ja) 半導体装置
JPH0394451A (ja) 半導体装置の配線構造
JPH01133362A (ja) トランジスタ
JPH0243337B2 (enExample)
JP2025164744A (ja) 半導体ダイおよびその製造方法
JPS6127677A (ja) 半導体装置の製造方法
KR20030083769A (ko) 반도체 기판에 형성된 전극 패드의 배선금속 형성방법
JPH0340469A (ja) メサ型半導体装置の製造方法
JPH0823094A (ja) 圧接型高耐圧半導体装置
JPS61144072A (ja) 電界効果トランジスタの製造方法
JPS6214106B2 (enExample)
JPS61168252A (ja) 半導体装置及びその製造方法