JPH0526331B2 - - Google Patents
Info
- Publication number
- JPH0526331B2 JPH0526331B2 JP60013490A JP1349085A JPH0526331B2 JP H0526331 B2 JPH0526331 B2 JP H0526331B2 JP 60013490 A JP60013490 A JP 60013490A JP 1349085 A JP1349085 A JP 1349085A JP H0526331 B2 JPH0526331 B2 JP H0526331B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- aluminum
- etched
- gas
- uniformity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 57
- 229910052782 aluminium Inorganic materials 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 9
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 description 24
- 229910052801 chlorine Inorganic materials 0.000 description 20
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 12
- 238000005086 pumping Methods 0.000 description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 101001028804 Homo sapiens Protein eyes shut homolog Proteins 0.000 description 1
- 102100037166 Protein eyes shut homolog Human genes 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1349085A JPS61174634A (ja) | 1985-01-29 | 1985-01-29 | ドライエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1349085A JPS61174634A (ja) | 1985-01-29 | 1985-01-29 | ドライエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61174634A JPS61174634A (ja) | 1986-08-06 |
| JPH0526331B2 true JPH0526331B2 (fr) | 1993-04-15 |
Family
ID=11834555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1349085A Granted JPS61174634A (ja) | 1985-01-29 | 1985-01-29 | ドライエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61174634A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697676B2 (ja) * | 1985-11-26 | 1994-11-30 | 忠弘 大見 | ウエハサセプタ装置 |
| JPH06103665B2 (ja) * | 1987-01-29 | 1994-12-14 | 東京エレクトロン株式会社 | 処理装置 |
| JP3327285B2 (ja) * | 1991-04-04 | 2002-09-24 | 株式会社日立製作所 | プラズマ処理方法及び半導体装置の製造方法 |
| DE69230322T2 (de) * | 1991-04-04 | 2000-07-06 | Hitachi, Ltd. | Verfahren und Vorrichtung zur Plasmabehandlung |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54118172A (en) * | 1978-03-06 | 1979-09-13 | Nichiden Varian Kk | Method of dry etching aluminum |
| JPS57133633A (en) * | 1981-02-13 | 1982-08-18 | Anelva Corp | Dry-etching device |
| US4376672A (en) * | 1981-10-26 | 1983-03-15 | Applied Materials, Inc. | Materials and methods for plasma etching of oxides and nitrides of silicon |
| US4412885A (en) * | 1982-11-03 | 1983-11-01 | Applied Materials, Inc. | Materials and methods for plasma etching of aluminum and aluminum alloys |
-
1985
- 1985-01-29 JP JP1349085A patent/JPS61174634A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54118172A (en) * | 1978-03-06 | 1979-09-13 | Nichiden Varian Kk | Method of dry etching aluminum |
| JPS57133633A (en) * | 1981-02-13 | 1982-08-18 | Anelva Corp | Dry-etching device |
| US4376672A (en) * | 1981-10-26 | 1983-03-15 | Applied Materials, Inc. | Materials and methods for plasma etching of oxides and nitrides of silicon |
| US4412885A (en) * | 1982-11-03 | 1983-11-01 | Applied Materials, Inc. | Materials and methods for plasma etching of aluminum and aluminum alloys |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61174634A (ja) | 1986-08-06 |
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