JP2009532873A - 汚染を低減したガス注入システム及びその使用方法 - Google Patents
汚染を低減したガス注入システム及びその使用方法 Download PDFInfo
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- 238000002347 injection Methods 0.000 title abstract description 23
- 239000007924 injection Substances 0.000 title abstract description 23
- 238000000034 method Methods 0.000 title description 29
- 238000011109 contamination Methods 0.000 title description 6
- 238000012545 processing Methods 0.000 claims abstract description 187
- 238000009826 distribution Methods 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010453 quartz Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 5
- 238000000576 coating method Methods 0.000 claims 5
- 238000005530 etching Methods 0.000 abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 229920005591 polysilicon Polymers 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 192
- 230000008569 process Effects 0.000 description 23
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- 230000006698 induction Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000013529 heat transfer fluid Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009931 pascalization Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (19)
- 加工空間を含む加工チェンバー;
前記加工チェンバーと流体連結する加工ガス供給システム、ここで前記加工ガス供給システムは、加工ガスの流れを前記加工チェンバーに導入するように構成される;
前記加工チェンバーと結合するガス分配システム、ここで前記ガス分配システムは、入口を通して前記加工ガスの前記流れを受け取り、かつ、プレナム中の前記加工ガスの前記流れを前記加工空間と流体連結する複数の開口に分配するように構成され、前記ガス分配システムは、加工ガス拡散器を含み、前記加工ガス拡散器は、前記ガス分配システムの前記入口に位置し、かつ、前記加工ガスの前記流れの運動量を前記プレナム中に拡散させるように構成される;
前記加工チェンバーと結合する保持器、ここで前記保持器は、基板を前記加工チェンバー内で前記加工ガスに曝すために支持するように構成される;及び
前記加工チェンバーと結合する真空ポンプシステム、ここで前記真空ポンプシステムは、前記加工チェンバーから排気するように構成される;
を含む処理システム。 - 前記加工ガス拡散器は、発散路を含む、請求項1の処理システム、ここで前記発散路は、前記加工ガス供給システムの出口に接続する入口及び前記プレナムに接続する出口を有し、前記発散路の前記出口は、前記入口の開口よりも大きな開口を含む。
- 前記発散路は、円錐状の路を含む、請求項2の処理システム、ここで前記円錐状の路は、約20度以下の半角を有する。
- 前記発散路は、円錐状の路を含む、請求項2の処理システム、ここで前記円錐状の路は、約18度以下の半角を有する。
- 前記発散路は、円錐状の路を含む、請求項2の処理システム、ここで前記円錐状の路は、約15度以下の半角を有する。
- 前記加工ガス拡散器は、オリフィス板を前記発散路の前記出口に更に含む、請求項2の処理システム。
- 前記発散路は、円筒状入口及び円筒状出口を含む、請求項6の処理システム、ここで前記円筒状入口は入口直径を有し、前記円筒状出口は前記入口直径よりも大きい出口直径を有する。
- 前記入口直径は、前記出口直径に急に変化する、請求項7の処理システム。
- 前記ガス分配システムの少なくとも1つの内部表面に配置された被膜を更に含む、請求項1の処理システム。
- 前記被膜は、陽極酸化処理層である、請求項9の処理システム。
- 前記被膜は、少なくとも1つの第3族元素を含む、請求項9の処理システム。
- 前記被膜は、Al2O3、Sc2O3、Sc2F3、YF3、La2O3、Y2O3又はDyO3を含む材料を含む、請求項9の処理システム。
- 前記ガス分配システムは、被膜を有するアルミニウムから形成される、請求項1の処理システム。
- 前記ガス分配システムは、石英、アルミナ、窒化アルミニウム、サファイア、シリコン、窒化シリコン、炭化シリコン、又は炭素、若しくはこれらの2つ以上の組み合わせから形成される、請求項1の処理システム。
- 前記ガス分配システムは、誘電性の材料から形成される、請求項1の処理システム。
- 前記加工チェンバーに接続し、前記保持器の反対側に配置される上位電極を更に含む、請求項15の処理システム、ここで:
前記上位電極は、無線周波数(RF)発電器に接続し、前記RF発電器からのRF電力を前記加工ガスに結合することにより、前記加工空間にプラズマを形成するように構成され;かつ
前記ガス分配システムは、前記上位電極と前記保持器の間に配置される。 - 前記ガス分配システムは、石英、サファイア、アルミナ、窒化アルミニウム、シリコン、炭化シリコン、又は窒化シリコン、若しくはこれらの2つ以上の組み合わせから形成される、請求項16の処理システム。
- 前記プレナムは、約5mm以下の高さを有する円筒状の体積を含む、請求項16の処理システム。
- 前記プレナムは、約3mm以下の高さを有する円筒状の体積を含む、請求項16の処理システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/392,949 US7743731B2 (en) | 2006-03-30 | 2006-03-30 | Reduced contaminant gas injection system and method of using |
US11/392,949 | 2006-03-30 | ||
PCT/US2007/061041 WO2007117741A2 (en) | 2006-03-30 | 2007-01-25 | A reduced contaminant gas injection system and method of using |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009532873A true JP2009532873A (ja) | 2009-09-10 |
JP5185251B2 JP5185251B2 (ja) | 2013-04-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009503104A Expired - Fee Related JP5185251B2 (ja) | 2006-03-30 | 2007-01-25 | 汚染を低減したガス注入システム及びその使用方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7743731B2 (ja) |
JP (1) | JP5185251B2 (ja) |
KR (1) | KR101315558B1 (ja) |
CN (1) | CN101460655B (ja) |
WO (1) | WO2007117741A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2018082150A (ja) * | 2016-10-04 | 2018-05-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 改善したプロファイルを有するデュアルチャネルシャワーヘッド |
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JP5230225B2 (ja) * | 2008-03-06 | 2013-07-10 | 東京エレクトロン株式会社 | 蓋部品、処理ガス拡散供給装置、及び基板処理装置 |
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WO2007117741A3 (en) | 2007-12-13 |
CN101460655B (zh) | 2012-08-29 |
US7743731B2 (en) | 2010-06-29 |
CN101460655A (zh) | 2009-06-17 |
US20070235136A1 (en) | 2007-10-11 |
KR20080110652A (ko) | 2008-12-18 |
WO2007117741A2 (en) | 2007-10-18 |
JP5185251B2 (ja) | 2013-04-17 |
KR101315558B1 (ko) | 2013-10-08 |
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