JPH0526325B2 - - Google Patents

Info

Publication number
JPH0526325B2
JPH0526325B2 JP58084396A JP8439683A JPH0526325B2 JP H0526325 B2 JPH0526325 B2 JP H0526325B2 JP 58084396 A JP58084396 A JP 58084396A JP 8439683 A JP8439683 A JP 8439683A JP H0526325 B2 JPH0526325 B2 JP H0526325B2
Authority
JP
Japan
Prior art keywords
diamond
type semiconductor
substrate
semiconductor
semiconductor part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58084396A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59208821A (ja
Inventor
Akira Doi
Naoharu Fujimori
Takeshi Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58084396A priority Critical patent/JPS59208821A/ja
Publication of JPS59208821A publication Critical patent/JPS59208821A/ja
Publication of JPH0526325B2 publication Critical patent/JPH0526325B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H10P14/24—
    • H10P14/3411—
    • H10P14/3444—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond

Landscapes

  • Bipolar Transistors (AREA)
JP58084396A 1983-05-13 1983-05-13 気相合成によるダイヤモンド半導体およびその製造方法 Granted JPS59208821A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58084396A JPS59208821A (ja) 1983-05-13 1983-05-13 気相合成によるダイヤモンド半導体およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58084396A JPS59208821A (ja) 1983-05-13 1983-05-13 気相合成によるダイヤモンド半導体およびその製造方法

Publications (2)

Publication Number Publication Date
JPS59208821A JPS59208821A (ja) 1984-11-27
JPH0526325B2 true JPH0526325B2 (OSRAM) 1993-04-15

Family

ID=13829410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58084396A Granted JPS59208821A (ja) 1983-05-13 1983-05-13 気相合成によるダイヤモンド半導体およびその製造方法

Country Status (1)

Country Link
JP (1) JPS59208821A (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274268A (en) * 1987-04-01 1993-12-28 Semiconductor Energy Laboratory Co., Ltd. Electric circuit having superconducting layered structure
JP2614868B2 (ja) * 1987-09-09 1997-05-28 導電性無機化合物技術研究組合 電界効果トランジスタの製造法
JP2590161B2 (ja) * 1987-12-15 1997-03-12 導電性無機化合物技術研究組合 Ｍｉｓ型電界効果トランジスタの製造法
JP2671259B2 (ja) * 1988-03-28 1997-10-29 住友電気工業株式会社 ショットキー接合半導体装置
GB8812216D0 (en) * 1988-05-24 1988-06-29 Jones B L Diamond transistor method of manufacture thereof
WO1990007796A1 (en) * 1989-01-03 1990-07-12 Massachusetts Institute Of Technology Insulator films on diamond
JP2695000B2 (ja) * 1989-04-11 1997-12-24 住友電気工業株式会社 サーミスタ及びその製造方法
US5243199A (en) * 1990-01-19 1993-09-07 Sumitomo Electric Industries, Ltd. High frequency device
JP2730271B2 (ja) * 1990-03-07 1998-03-25 住友電気工業株式会社 半導体装置
JP2961812B2 (ja) * 1990-05-17 1999-10-12 住友電気工業株式会社 半導体装置
JP2836790B2 (ja) * 1991-01-08 1998-12-14 株式会社神戸製鋼所 ダイヤモンド薄膜へのオーミック電極形成方法
EP0543392A3 (en) * 1991-11-21 1993-10-20 Canon Kk Diamond semiconductor device and method of producing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848428A (ja) * 1981-09-17 1983-03-22 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体およびその作製方法

Also Published As

Publication number Publication date
JPS59208821A (ja) 1984-11-27

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